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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR3045WT series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V
a1 1 k2
a2 3
IO(AV) = 30 A IFSM = 300 A VF 0.6 V SOT429 (TO247)
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR3045WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR30 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb 107 C square wave; = 0.5; Tmb 124 C square wave; = 0.5; Tmb 124 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40WT 40 40 40 30 30 300 330 2 150 175 45WT 45 45 45 V V V A A A A A C C UNIT
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. MAX. UNIT 45 1.6 1.2 K/W K/W K/W
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage per diode Reverse current per diode Junction capacitance CONDITIONS IF = 20 A; Tj = 125C IF = 30 A; Tj = 125C IF = 30 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C
PBYR3045WT series
MIN. -
TYP. MAX. UNIT 0.58 0.69 0.71 0.12 15 450 0.6 0.72 0.76 1.5 30 V V V mA mA pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR3045WT series
15
Forward dissipation, PF (W) Vo = 0.36 V Rs = 0.012 Ohms
PBYR3045WT Ths(max) (C) D = 1.0
126
100
Reverse current, IR (mA)
PBYR3045WT
125 C
0.5 10 0.1 0.2 134
10 100 C 1 75 C 50 C 0.1 Tj = 25 C
5
I
tp
D=
tp T t
142
T
0
0
5
10 15 20 Average forward current, IF(AV) (A)
150 25
0.01 0 25 Reverse voltage, VR (V) 50
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Forward dissipation, PF (W) Vo = 0.36 V Rs = 0.012 Ohms PBYR3045WT Tmb(max) (C) 130.8 a = 1.57 1.9 134 2.2 2.8 137.2 140.4 143.6 146.8 150 15
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
12 10 8 6 4 2 0
Cd / pF 10000
PBYR3045CT
4
1000
0
5 10 Average forward current, IF(AV) (A)
100 1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
PBYR3045WT
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
50
Forward current, IF (A) Tj = 25 C Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
40
1
30 typ 20 max 10
T
0.1
P D tp D= tp T t
0
0.01
0
0.2
0.4
0.6 0.8 1 Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR3045WT
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode; Zth j-mb = f(tp).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8
PBYR3045WT series
o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.7. SOT429 (TO247); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR3045WT series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
5
Rev 1.200

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