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 NPN Silicon RF Transistor
q
BFQ 74
For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. Hermetically sealed ceramic package. HiRel/Mil screening available.
q q
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 74 Marking 74 Ordering Code (tape and reel) Q62702-F788 Pin Configuration 1 2 3 4 B E C E Package1) Cerec-X
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE = 0 Collector-base voltage Emitter-base voltage Collector current Peak collector current, f 10 MHz Base current Total power dissipation, TS 115 C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point3) Rth JA Rth JS

Symbol VCE0 VCES VCB0 VEB0 IC ICM IB Ptot Tj TA Tstg
Values 16 25 25 2 35 45 5 300 175 - 65 ... + 175 - 65 ... + 175
Unit V
mA
mW C
280 200
K/W
For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb.
1) 2)
BFQ 74 BFQ 74
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 15 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 5 mA, VCE = 10 V IC = 15 mA, VCE = 10 V Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA Base-emitter voltage IC = 10 mA, VCE = 10 V V(BR)CE0 ICES ICB0 IEB0 hFE 50 50 VCEsat VBE - - 110 120 0.13 0.78 250 - 0.3 - V 16 - - - - - - - - 100 50 10 V
A
Values typ. max.
Unit
nA
A
-
BFQ 74 BFQ 74
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 200 MHz IC = 15 mA, VCE = 10 V, f = 200 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75 IC = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50 IC = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt Power gain IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 IC = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50 Transducer gain IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Linear output voltage two-tone intermodulation test IC = 25 mA, VCE = 10 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point IC = 25 mA, VCE = 10 V, f = 800 MHz fT - - Ccb Cce Cibo Cobs F - - - Gma1) Gms2) I S21e I 2 - - - 0.9 1.4 2.5 14 9.8 9.8 160 - - 2.9 - - - - mV - - - - 4.4 6 0.3 0.4 1.35 0.7 - - 0.4 - - - dB pF GHz Values typ. max. Unit
Vo1 = Vo2 -
IP3
-
27
-
dBm
1)
S21e S12e S21e S12e
(k - k 2- 1)
2)
BFQ 74 BFQ 74
Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina
Transition frequency fT = f (IC) f = 200 MHz
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz
BFQ 74 BFQ 74
Common Emitter Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50) dB
IC = 3 mA, VCE = 10 V, Z0 = 50 0.01 0.7 - (ZS = 150 ) - - 1.2 -
IC = 10 mA, VCE = 10 V, Z0 = 50 0.01 0.8 2.0 1.05 1.3 2.5 - 17.5 11.5 (ZS = 75 ) 0.22 82 0.20 137 - 11.5 23.5 - 0.20 0.60 1.2 1.4 2.7 - 16.8 10
Noise figure F = f (IC) VCE = 10 V, f = 10 MHz
BFQ 74 BFQ 74
Circles of constant noise figure F = f (ZS) and available power gain Gav = f (ZS) IC = 10 mA, VCE = 10 V, f = 800 MHz
Noise figure F = f (IC) Power gain G = f (IC) VCE = 10 V, f = 800 MHz, ZLopt (G)
Circles of constant noise figure F = f (ZS) and available power gain Gav = f (ZS) IC = 10 mA, VCE = 10 V, f = 2 GHz
Noise figure F = f (IC) Power gain G = f (IC) VCE = 10 V, f = 2 GHz, ZLopt (G)
BFQ 74 BFQ 74
Common Emitter Power Gain Power gain Gms, S21e 2 = f (IC) VCE = 10 V, f = 1 GHz, Z0 = 50 Power gain Gma, S21e 2 = f (IC) VCE = 10 V, f = 2 GHz, Z0 = 50
Power gain Gms, S21e 2 = f (IC) VCE = 10 V, f = 4 GHz, Z0 = 50
BFQ 74 BFQ 74
Power gain Gma, Gms, S21e 2 = f (f) IC = 2 mA, VCE = 10 V, Z0 = 50
Power gain Gma, Gms, S21e 2 = f (f) IC = 5 mA, VCE = 10 V, Z0 = 50
Power gain Gma, Gms, S21e 2 = f (f) IC = 10 mA, VCE = 10 V, Z0 = 50
Power gain Gma, Gms, S21e 2 = f (f) IC = 25 mA, VCE = 10 V, Z0 = 50
BFQ 74 BFQ 74
Common Emitter S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG
IC = 2 mA, VCE = 10 V, Z0 = 50 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.96 0.93 0.88 0.84 0.77 0.71 0.68 0.65 0.63 0.63 0.63 0.64 0.66 0.68 0.68 0.71 0.72 - 16 - 33 - 50 - 64 - 89 - 110 - 127 - 141 - 158 - 172 179 161 145 133 118 107 95 6.83 6.61 6.18 5.62 4.78 3.98 3.41 2.95 2.45 2.10 1.91 1.58 1.36 1.20 1.07 0.96 0.85 169 155 144 134 118 104 93 84 72 62 55 41 28 15 3 -8 - 18 0.017 0.034 0.049 0.060 0.076 0.085 0.089 0.091 0.091 0.092 0.091 0.092 0.099 0.113 0.136 0.160 0.190 79 70 62 54 43 34 29 25 22 21 21 24 29 34 35 34 29 0.99 0.96 0.92 0.88 0.81 0.74 0.70 0.67 0.64 0.63 0.61 0.59 0.59 0.58 0.58 0.58 0.60 -5 - 11 - 16 - 20 - 26 - 31 - 34 - 37 - 41 - 46 - 49 - 60 - 71 - 83 - 97 - 111 - 127
S11, S22 = f (f) IC = 2 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f) IC = 2 mA, VCE = 10 V, Z0 = 50
BFQ 74 BFQ 74
Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG
IC = 5 mA, VCE = 10 V, Z0 = 50 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.91 0.83 0.75 0.70 0.63 0.58 0.57 0.56 0.55 0.56 0.57 0.59 0.61 0.63 0.64 0.68 0.68 - 25 - 51 - 72 - 89 - 115 - 135 - 150 - 162 - 176 173 166 152 138 128 114 104 93 14.67 13.37 11.62 9.90 7.61 5.97 4.92 4.18 3.40 2.87 2.60 2.13 1.83 1.61 1.44 1.29 1.16 163 145 131 121 105 94 85 77 68 59 53 41 29 17 5 -6 - 16 0.017 0.031 0.040 0.047 0.056 0.061 0.064 0.068 0.073 0.080 0.084 0.098 0.116 0.135 0.161 0.183 0.209 78 63 54 47 41 37 36 36 37 38 39 41 41 41 37 33 27 0.97 0.89 0.80 0.73 0.64 0.58 0.54 0.52 0.50 0.49 0.47 0.46 0.45 0.44 0.45 0.44 0.46 -9 - 18 - 24 - 28 - 32 - 34 - 36 - 37 - 41 - 45 - 48 - 58 - 68 - 80 - 94 - 108 - 124
S11, S22 = f (f) IC = 5 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f) IC = 5 mA, VCE = 10 V, Z0 = 50
BFQ 74 BFQ 74
Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG
IC = 10 mA, VCE = 10 V, Z0 = 50 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.83 0.71 0.63 0.58 0.55 0.52 0.53 0.52 0.52 0.53 0.55 0.57 0.60 0.62 0.63 0.67 0.67 - 35 - 65 - 89 - 105 - 130 - 148 - 161 - 171 176 167 161 148 135 125 112 103 92 22.64 18.55 14.98 12.22 8.96 6.91 5.64 4.76 3.87 3.25 2.95 2.41 2.06 1.82 1.62 1.46 1.32 155 134 121 112 98 89 81 75 65 57 52 40 29 18 6 -5 - 15 0.015 0.026 0.034 0.039 0.047 0.053 0.058 0.064 0.072 0.083 0.089 0.107 0.127 0.148 0.173 0.194 0.217 70 59 53 48 46 44 45 45 46 46 47 46 43 41 36 32 25 0.92 0.80 0.70 0.63 0.54 0.49 0.46 0.44 0.43 0.42 0.41 0.39 0.38 0.37 0.37 0.37 0.38 - 13 - 23 - 27 - 30 - 32 - 34 - 35 - 37 - 40 - 44 - 47 - 56 - 67 - 78 - 92 - 106 - 123
S11, S22 = f (f) IC = 10 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f) IC = 10 mA, VCE = 10 V, Z0 = 50
BFQ 74 BFQ 74
Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG
IC = 15 mA, VCE = 10 V, Z0 = 50 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.79 0.66 0.59 0.55 0.52 0.51 0.52 0.51 0.51 0.53 0.54 0.56 0.59 0.62 0.63 0.66 0.67 - 44 - 81 - 107 - 123 - 145 - 161 - 171 179 169 161 156 145 133 123 111 102 91 29.12 22.58 17.37 13.71 9.66 7.32 5.92 4.97 4.02 3.36 3.04 2.49 2.12 1.87 1.67 1.50 1.35 151 128 115 106 93 85 78 72 63 56 51 39 28 17 6 -5 - 15 0.015 0.023 0.028 0.033 0.039 0.045 0.051 0.058 0.068 0.080 0.087 0.107 0.128 0.151 0.176 0.198 0.222 66 56 50 48 48 50 51 52 53 53 52 51 47 44 38 33 26 0.89 0.73 0.61 0.55 0.48 0.44 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.35 0.35 0.36 - 17 - 27 - 30 - 31 - 31 - 32 - 33 - 34 - 37 - 42 - 45 - 54 - 65 - 77 - 91 - 106 - 122
S11, S22 = f (f) IC = 15 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f) IC = 15 mA, VCE = 10 V, Z0 = 50
BFQ 74 BFQ 74
Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG
IC = 20 mA, VCE = 10 V, Z0 = 50 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.73 0.61 0.56 0.53 0.51 0.50 0.51 0.51 0.51 0.53 0.55 0.57 0.59 0.62 0.63 0.67 0.68 - 51 - 89 - 115 - 130 - 151 - 165 - 174 176 167 159 154 143 132 123 110 101 91 32.84 24.03 18.02 14.07 9.80 7.40 5.97 5.01 4.04 3.38 3.06 2.50 2.13 1.87 1.67 1.50 1.35 147 124 111 103 91 83 76 71 62 55 50 39 28 17 5 -5 - 15 0.013 0.021 0.026 0.030 0.036 0.043 0.050 0.057 0.068 0.080 0.087 0.108 0.130 0.152 0.178 0.199 0.224 69 55 50 49 51 53 54 55 56 55 54 52 48 45 39 34 27 0.86 0.69 0.58 0.52 0.46 0.43 0.41 0.40 0.39 0.39 0.38 0.36 0.36 0.34 0.35 0.34 0.36 - 18 - 27 - 29 - 30 - 30 - 30 - 31 - 33 - 36 - 41 - 44 - 53 - 64 - 76 - 90 - 105 - 122
S11, S22 = f (f) IC = 20 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f) IC = 20 mA, VCE = 10 V, Z0 = 50
BFQ 74 BFQ 74
Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG
IC = 25 mA, VCE = 10 V, Z0 = 50 0.1 0.2 0.3 0.4 0.6 0.8 1.0 1.2 1.5 1.8 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.69 0.59 0.54 0.51 0.51 0.50 0.52 0.51 0.52 0.53 0.55 0.57 0.60 0.62 0.64 0.67 0.68 - 55 - 94 - 120 - 135 - 154 - 167 - 176 175 165 158 153 143 131 122 110 101 90 34.86 24.49 18.09 14.03 9.73 7.33 5.90 4.96 4.00 3.34 3.02 2.47 2.10 1.85 1.65 1.48 1.33 143 121 109 101 90 82 76 70 62 54 50 38 27 16 5 -6 - 16 0.013 0.020 0.025 0.029 0.035 0.042 0.049 0.057 0.068 0.080 0.087 0.108 0.130 0.152 0.179 0.200 0.224 66 55 50 50 52 54 56 57 57 56 55 53 49 46 40 34 27 0.83 0.66 0.56 0.51 0.45 0.43 0.41 0.40 0.40 0.39 0.38 0.36 0.36 0.35 0.36 0.35 0.36 - 19 - 27 - 29 - 28 - 28 - 29 - 30 - 32 - 35 - 40 - 43 - 52 - 63 - 75 - 90 - 105 - 122
S11, S22 = f (f), Z-plane IC = 25 mA, VCE = 10 V, Z0 = 50
S12, S21 = f (f) IC = 25 mA, VCE = 10 V, Z0 = 50


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