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DG9232/9233
Vishay Siliconix
Low-Voltage Dual SPST Analog Switch
FEATURES
D D D D D D D D D Low Voltage Operation (+2.7 to +5 V) Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC Low Power Consumption TTL/CMOS Compatible ESD Protection > 2000 V (Method 3015.7) Available in MSOP-8 and SOIC-8
BENEFITS
D D D D Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space
APPLICATIONS
D D D D D D D Battery Operated Systems Portable Test Equipment Sample and Hold Circuits Cellular Phones Communication Systems Military Radio PBX, PABX Guidance and Control Systems
DESCRIPTION
The DG9232/9233 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed (tON: 35 ns, tOFF: 20 ns), low on-resistance (rDS(on): 20 W) and small physical size, the DG9232/9233 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG9232/9233 is built on Vishay Siliconix's low voltage BCD-15 process. Minimum ESD protection, per Method 3015.7 is 2000 V. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG9232/9233. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC1 COM1 IN2 GND
1 2 3 4
8 7 6 5
V+ IN1 COM2 NC2
NO1 COM1 IN2 GND
1 2 3 4
8 7 6 5
V+ IN1 COM2 NO2
Top View
Top View
TRUTH TABLE - DG9232 Logic
0 1 Logic "0" v0.8 V Logic "1"w 2.4 V
TRUTH TABLE - DG9233 Logic
0 1 Logic "0" v0.8 V Logic "1"w 2.4 V
Switch
On Off
Switch
Off On
ORDERING INFORMATION Temp Range Package
SOIC-8 -40 to 85C MSOP-8
Part Number
DG9232DY DG9233DY DG9232DQ DG9233DQ www.vishay.com
Document Number: 70837 S-05298--Rev. D, 17-Dec-01
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DG9232/9233
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA (Pulsed at 1ms, 10% duty cycle) ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125C Power Dissipation (Packages)b 8-Pin Narrow Body SOICc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Matchd rDS(on) Flatnessd NO or NC Off Leakage Current g COM Off Leakage Current g Channel-On Leakage Current g VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA VNO or VNC = 1.5 V VNO or VNC = 1 and 2 V VNO or VNC = 1 V / 2 V, VCOM = 2 V / 1 V VCOM = 1 V / 2 V, VNO or VNC = 2 V / 1 V VCOM = VNO or VNC = 1 V / 2 V Full Room Full Room Room Room Full Room Full Room Full -100 -5000 -100 -5000 -200 -10000 0 30 0.4 4 5 5 10 3 50 80 2 8 100 5000 100 5000 200 10000 pA W V
D Suffix
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minc
Typb
Maxc
Unit
Digital Control
Input Current IINL or IINH Full 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectiond Off-Isolation Crosstalk NC and NO Capacitance Channel-On Capacitance Com-Off Capacitance tON VNO or VNC = 1.5 V tOFF QINJ OIRR XTALK C(off) CCOM(on) CCOM(off) f = 1 MHz CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W CL = 5 pF, f = 1 MHz W, Room Full Room Full Room Room Room Room Room Room 50 20 1 -74 -90 7 20 13 pF dB 120 200 50 120 5 ns
pC
Power Supply
Power Supply Range Power Supply Current Notes: a. b. c. d. e. f. g. Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values. Guaranteed by 5-V leakage tests, not production tested. Document Number: 70837 S-05298--Rev. D, 17-Dec-01 V+ I+ V+ = 3.3 V, VIN = 0 or 3.3 V 2.7 12 1 V mA
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DG9232/9233
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Matchd rDS(on) Flatnessd NO or NC Off Leakage Current COM Off Leakage Current Channel-On Leakage Current VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 3.5 V, V+ = 4.5 V ICOM = 5 mA VNO or VNC = 3.5 V VNO or VNC = 1, 2, and 3 V VNO or VNC = 1 V / 4 V, VCOM = 4 V / 1 V VCOM = 1 V / 4 V, VNO or VNC = 4 V / 1 V VCOM = VNO or VNC = 1 V / 4 V Full Room Full Room Room Room Full Room Full Room Full -100 -5000 -100 -5000 -200 -10000 0 20 0.4 2 10 10 5 30 50 2 6 100 5000 100 5000 200 10000 pA W V
D Suffix
-40 to 85_C
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Tempa
Minc
Typb
Maxc
Unit
Digital Control
Input Current IINL or IINH Full 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injectiond Off-Isolation Crosstalk NC and NO Capacitance Channel-On Capacitance Com-Off Capacitance tON VNO or VNC = 3.0 V tOFF QINJ OIRR XTALK C(off) CD(on) CD(off) f = 1 MHz RL = 50 W CL = 5 pF, f = 1 MHz W, CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room Full Room Full Room Room Room Room Room Room 35 20 2 -74 dB -90 7 20 13 pF 75 150 50 100 5 ns
pC
Power Supply
Power Supply Range Power Supply Current V+ I+ V+ = 5.5 V, VIN = 0 or 5.5 V 2.7 12 1 V mA
Notes: a. b. c. d. e. f. Room = 25C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Difference of min and max values.
Document Number: 70837 S-05298--Rev. D, 17-Dec-01
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DG9232/9233
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection
2.0 1.5 1.0 0.5 Q INJ (pC) 0.0 -0.5 -1.0 -1.5 -2.0 0.0 I SUPPLY ( m A) V+ = 3 V 3000 2500 2000 1500 1000 500 0 V+ = 3 V -500 0.5 1.0 1.5 VCOM 2.0 2.5 3.0 0 1 2 VIN 3 4 5 V+ = 5 V
Supply Current vs. VIN
Leakage Current vs. Temperature
10 nA -40
Off-Isolation vs. Frequency
1 nA OFF-Isolation (dB) 125 I COM(off) (A)
-60
100 pA ICOM(off) 10 pA ICOM(on)
-80
-100
1 pA
-120
0.1 pA 25 45 65 85 105
-140 0.001 M 0.01 M 0.1 M Frequency (Hz) 1M 10 M
Temperature (_C)
Off-Leakage vs. Voltage @ 25_C
2.5 2.0 1.5 1.0 I OFF (pA) 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 0 1 2 VCOM 3 4 5 12 0 1 INO/NC r DS(on) ( W ) ICOM V+ = 5 V 27 30
rDS vs. VCOM
V+ = 3 V
24
21
18 V+ = 5 V
15
2 VCOM
3
4
5
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Document Number: 70837 S-05298--Rev. D, 17-Dec-01
DG9232/9233
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS vs. VCOM
35 85_C 28 25_C 21 40_C t ON / t OFF (nsec) r DS(on) ( W ) 50 40 30 tOFF 20 10 0 0.0 0 -60 70 V+ = 3 V 60 tON
Switching Time vs. Temperature
14
7
0.5
1.0
1.5 VCOM
2.0
2.5
3.0
-30
0
30
60
90
120
Temperature (_C)
tON/tOFF vs. Power Supply Voltage
120
Input Switching Point vs. Power Supply Voltage
2.25 2.00 1.75
100
T (nsec)
V IN (sw) tON tOFF 2.0 2.5 3.0 V+ 3.5 4.0 4.5 5.0
80
1.50 1.25 1.00
60
40
20
0.75 0.50 2 3 4 V+ 5 6
0 1.5
Document Number: 70837 S-05298--Rev. D, 17-Dec-01
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DG9232/9233
Vishay Siliconix
TEST CIRCUITS
V+ Logic Input V+ Switc h Input NO or NC IN GND 0V CL (includes fixture and stray capacitance) V OUT + V COM RL R L ) R ON Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. RL 300 W CL 35 pF COM Switch Output VOUT 0.9 x VOUT Switch Output 0V tON tOFF
+3V 50% 0V
tr t 20 ns tf t 20 ns
Logi c Input
FIGURE 1. Switching Time
V+ Logic Input COM1 COM2 VNC = VNO VO Switch Output 0V tD tD 3V 0V tr <5 ns tf <5 ns
V+ V1 V2 NO or NC NO or NC
RL 300 W GND
CL 35 pF
90%
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen + Vgen 3V
V+ NC or NO IN GND COM VOUT VOUT CL IN On
DVOUT
Off Q = DVOUT x CL
On
IN depends on switch configuration: input polarity determined by sense of switch.
FIGURE 3. Charge Injection
www.vishay.com Document Number: 70837 S-05298--Rev. D, 17-Dec-01
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DG9232/9233
Vishay Siliconix
TEST CIRCUITS
V+ 10 nF
V+ COM IN COM NC or NO Off Isolation + 20 log GND V NC NO V COM 0V, 2.4 V
RL
Analyzer
FIGURE 4. Off-Isolation
V+ 10 nF
V+ COM Meter IN 0 V, 2.4 V NC or NO GND HP4192A Impedance Analyzer or Equivalent f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Document Number: 70837 S-05298--Rev. D, 17-Dec-01
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