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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF650/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. * Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz IRL = 10 dB * Characterized with Series Equivalent Large-Signal Impedance Parameters from 400 to 520 MHz * Built-In Matching Network for Broadband Operation * Triple Ion Implanted for More Consistent Characteristics * Implanted Emitter Ballast Resistors * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF650 50 W, 512 MHz RF POWER TRANSISTOR NPN SILICON CASE 316-01, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Value 16.5 38 4.0 12 135 0.77 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.3 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES hFE Cob 16.5 38 4.0 -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) 20 70 120 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) -- 135 170 pF (continued) REV 8 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF650 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.) Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz) Common-Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz) Input Return Loss (VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470, 512 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz) Collector Efficiency (VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz) Output Mismatch Stress (VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz, VSWR = 20:1, All Phase Angles) (1) Gpe Gpe IRL -- (2) No Degradation in Output Power 5.2 5.0 10 55 50 6.1 5.9 15 65 60 -- -- -- -- -- dB dB dB % % NOTES: 1. Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc. 2. = Mismatch stress factor -- the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles. R1 VRE PORT B1 B2 B3 SOCKET + C1 C2 C3 B4 B5 + C8 B6 B7 R2 B8 +12.5 Vdc C6 C7 C4 L1 RF INPUT 50 N1 C12 TL2 C10 C11 D.U.T. TL1 C9 TL3 TL4 TL5 TL6 C5 L2 TL7 TL8 TL9 TL10 C16 TL12 RF OUTPUT 50 N2 C13 C14 C15 TL11 B1, B8 -- Ferrite Bead Ferroxcube VK200 20-4B B2, B3, B4, B5, B6, B7 -- Ferrite Bead Ferroxcube #56-590-3B C1, C8 -- 10 F, 25 V, 25%, Electrolytic, ECS TE-1204 C2, C7 -- 1000 pF, Chip Cap, 5%, ATC 100B102JC50 C3, C6 -- 91 pF, 5%, Mica, SAHA 3HS0006-91 C4, C5, C12, C13 -- 36 pF, 5%, SAHA 3HS0006-36 C9, C16 -- 220 pF, Chip Cap, 5%, ATC 100B221JC200 C10, C11, C15 -- 0.8 - 10 pF, Variable, Johanson JMC501 PG26J200 C14 -- 1.0 - 20 pF, Variable, Johanson JMC5501 PG26J200 L1, L2 -- 3 Turns, 18 AWG, 0.19 ID -- Total Length 3.5 N1, N2 -- N Coaxial Conn., Omni-Spectra 3052-1648-10 R1, R2 -- 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010 TL1, TL12 -- Zo = 50 Ohm TL2 -- See Photomaster TL3 -- See Photomaster TL4 -- See Photomaster TL5 -- See Photomaster TL6 -- See Photomaster TL7 -- See Photomaster TL8 -- See Photomaster TL9 -- See Photomaster TL10 -- See Photomaster TL11 -- See Photomaster Transmission Line Boards: 1/16 Glass-Teflon Transmission Line Boards: Keene GX-0600-55-22 Transmission Line Boards: 2 oz. Cu Clad Both Sides Transmission Line Boards: r = 2.55 Bias Boards: 1/16 G10 or Equivalent Bias Boards: 2 oz. Cu Clad Double Sided Figure 1. 440 to 512 MHz Broadband Test Circuit Schematic MRF650 2 MOTOROLA RF DEVICE DATA 90 80 Po, OUTPUT POWER (WATTS) 70 60 50 40 30 20 10 0 0 4 8 12 16 20 VCC = 12.5 Vdc Po, OUTPUT POWER (WATTS) f = 400 MHzMHz 470 512 MHz 520 MHz 80 70 60 50 40 30 20 10 32 0 400 420 440 460 480 VCC = 12.5 Vdc Pin = 17 W 15 W 13 W 11 W 24 28 500 520 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 80 Po, OUTPUT POWER (WATTS) 70 60 50 40 30 Pin = 17 W Pin, INPUT POWER (WATTS) 15 W 13 W 11 W 14 12 10 8 6 4 2 VSWR 440 460 480 f, FREQUENCY (MHz) 500 c Pin Po = 50 W VCC = 12.5 Vdc 90 80 70 60 2.0:1 1.5:1 520 1.0:1 f = 512 MHz 20 10 7 8 9 10 11 12 13 14 15 16 17 0 VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Broadband Performance for Po = 50 W Pout = 50 W, VCC = 12.5 Vdc TUNED FOR MAXIMUM GAIN AT Po = 50 W Zin 470 440 f = 400 MHz 512 520 f (MHz) 400 440 470 512 520 Zin 0.7 + j2.8 0.7 + j3.2 0.8 + j3.3 0.8 + j3.2 0.7 + j3.0 ZOL* 1.4 + j2.3 1.1 + j2.6 0.8 + j2.7 0.7 + j2.9 0.6 + j3.0 ZOL* 520 470 512 440 f = 400 MHz NOTE: Zin & ZOL* are given from base-to-base and collector-to-collector respectively. ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. Figure 6. Input and Output Impedance Normalized to 10 Ohms Circuit Tuned for Maximum Gain @ Po = 50 W MOTOROLA RF DEVICE DATA MRF650 3 VSWR c , COLLECTOR EFFICIENCY (%) 90 16 R1, R2, R3, R4 B1 L1 C2 C3 TL4 C5 (440 - 512 MHz) L2 C10 C7 TL11 TL9 TL10 TL12 TL13 C12 B2 B3 +12.5 Vdc C11 C13 D.U.T. TL1 N1 C1 TL2 TL3 TL5 TL6 TL7 TL8 TL14 N2 C4 C6 C8 C9 B1, B2 -- Ferrite Bead Fair Rite Products Corp. B3 -- Ferrite Bead Fair Rite Products Corp. C2, C11 -- 820 pF, 5% C3, C10 -- 91 pF, 5%, Mica, SAHA 3HS0006-91 C1, C12 -- 220 pF, 5%, Murata Erie C4 -- 9.1 pF, 5%, Murata Erie C5, C6, C7, C8 -- 43 pF, 5%, Mica SAHA 3HS0006-43 C9 -- 10 pF, 5%, Murata Erie C13 -- 10 F, Electrolytic, 50 V, Panasonic L1 -- 7 Turns, 24 AWG, ID Dia. 0.116 L2 -- 5 Turns, 18 AWG, ID Dia. 0.165 N1, N2 -- SMA Flange Mount, Omni-Spectra 2052-1618-02 R1, R2, R3, R4 -- 39 Ohm 1/8 W 5% Rohm TL1 -- Zo = 50 Ohm TL2 -- Zo = 50 Ohm TL3 -- Zo = 50 Ohm TL4 -- See Photomaster TL5 -- Zo = 50 Ohm TL6 -- See Photomaster TL7 -- See Photomaster TL8 -- See Photomaster TL9 -- See Photomaster TL10 -- Zo = 50 Ohm TL11 -- See Photomaster TL12 -- Zo = 50 Ohm TL13 -- Zo = 50 Ohm TL14 -- Zo = 50 Ohm Board Material: 1/16 G10, r = 4.5 Board Material: 2 oz. Cu Clad Both Sides Figure 7. Schematic of Broadband Demonstration Amplifier (3) PERFORMANCE CHARACTERISTICS OF BROADBAND DEMONSTRATION AMPLIFIER 100 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 VCC = 12.5 Vdc 30 35 40 f = 400 MHzMHz 470 512 MHz 80 70 60 50 40 30 20 10 0 430 440 450 460 470 480 VSWR 490 500 510 520 c 80 70 60 Po Pin = 15 W VCC = 12.5 V 2.0:1 1.5:1 1.0:1 530 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 8. Output Power versus Input Power Figure 9. Po, c and VSWR versus Frequency (3) Detailed design and performance information available from Motorola upon request. MRF650 4 MOTOROLA RF DEVICE DATA VSWR c , COLLECTOR EFFICIENCY (%) PACKAGE DIMENSIONS D R 3 F 4 K NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 1 Q 2 L B J E N H A U STYLE 1: PIN 1. 2. 3. 4. C DIM A B C D E F H J K L N Q R U EMITTER COLLECTOR EMITTER BASE CASE 316-01 ISSUE D MOTOROLA RF DEVICE DATA MRF650 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MRF650 6 MRF650/D MOTOROLA RF DEVICE DATA |
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