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U2750B-B
Tuner IC for DAB
Description
The U2750B-B is a monolithically integrated tuner circuit fabricated with TEMIC Semiconductors' advanced UHF5S technology. Designed for applications in DAB receivers, it includes two selectable mixers, one VCO, a SAW-filter driver, an LO output buffer, a tristate band switch and an AGC-voltage generation block. Electrostatic sensitive device. Observe precautions for handling.
Features
D D D D
8.5 V supply voltage RF frequency range 70 MHz to 260 MHz Two identical mixers, selectable by band-switch input Balanced mixer input, balanced mixer output (open collector)
D Balanced LO output for PLL D SAW-filter driver with low impedance output D Power measurement and generation of AGC voltage
by charge-pump output
D High-impedance mixer inputs D Four-pin voltage-controlled oscillator
D Three charge-pump currents selectable
(zero, low, high)
D Voltage regulator for stable operating characteristics
Block Diagram
LO1 LO2 MXO1 MXO2 GND MAI1 MAI2 MBI1 MBI2 GND VS SWI1 SWI2 SLI
SLI
NWAGC SAW driver
BUF_LO
MIXA
MIXB
VCO C2 B1 B2 C1
Band- switch
Voltage stabilization
GND
CP BDSW
GND
VS
TH SWO1 SWO2 NWAGC
12485
VTune
Figure 1. Block diagram
Rev. A1, 28-Jun-99
1 (10)
Preliminary Information
U2750B-B
Ordering Information
Extended Type Number U2750B-BFS Package SSO28 Remarks
Pin Description
CP TH BDSW GND GND C1VC B2VC B1VC C2VC GND VS SWO1 SWO2 NWAGC 1 2 3 4 5 6 7 8 9 10 11 12 13 14
14815
28 LO1 27 LO2 26 GND 25 MAI1 24 MAI2 23 MBI1 22 MBI2 21 GND 20 VS 19 MXO2 18 MXO1 17 SWI2 16 SWI1 15 SLI
Figure 2. Pinning
2 (10)
Preliminary Information
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2 TH 3 4, 5 6 7 8 9 11 10 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 BDSW GND C1VC B2VC B1VC C2VC VS GND SWO1 SWO2 NWAGC SLI SWI1 SWI2 MXO1 MXO2 VS GND MBI2 MBI1 MAI2 MAI1 GND LO2 LO1 Rev. A1, 28-Jun-99
Pin 1
Symbol CP
Function Charge-pump output of the comparator Threshold input of the comparator Band-switch input Ground Collector Pin 1 of VCO Base Pin 2 of VCO Base Pin 1 of VCO Collector Pin 2 of VCO Supply voltage Ground Differential output of the SAW driver Differential output of the SAW driver AGC mode selection AGC mode selection Differential input of the SAW driver Differential input of the SAW driver Differential mixer output Differential mixer output Supply voltage Ground Differential input of mixer B Differential input of mixer B Differential input of mixer A Differential input of mixer A Ground Differential output of LO for PLL Differential output of LO for PLL
U2750B-B
Functional Description
The U2750B-B represents a tuner IC for applications in DAB receivers. It is intended to be used for receiption of band II or band III DAB signals and consists of two mixers, one VCO, a SAW-filter driver, an LO output buffer, a tristate band switch and an AGC-voltage generation circuit as shown in figure 1.
AGC-Voltage Generation Block
The incoming RF signal which appears at the input Pins MAI1, MAI2 or MBI1, MBI2 depending on the selection made by the Pin BDSW is amplified, weakly bandpass filtered (transition range: 50 MHz to 300 MHz), rectified and finally lowpass filtered.
* *
Y
Mixers and VCO
In order to support two different channels, two identical mixers are integrated. The RF signal is fed to these mixers via the differential input Ports MAI1, MAI2 and MBI1, MBI2. The band-switch input BDSW allows the selection of one of these mixers or to switch off both. An internal four-pin oscillator (Pins: B1VC, C1VC, B2VC, C2VC) an equivalent circuit is shown in figure 9 provides the LO signal to both mixers. Via an LO buffer, the oscillators signal can be accessed at the balanced output Pins LO1, LO2 in order to be fed to a frequency synthesizer circuit (U2753B or U2733B). The result of the mixing process of both mixers appears at the differential open-collector output MXO1, MXO2. In the application shown in figure 7, these mixer output pins are loaded by a resonant load.
*
*
The voltage derived in this `power measurement process' is compared with a voltage threshold which is defined by an external resistor connected to Pin TH, see figure 7. Depending on the result of this comparison, a charge pump feeds a positive or negative current to Pin CP in order to charge or discharge an external capacitor. The voltage of this external capacitor can be used to control the gain of an external (pre-) amplifier stage. By means of the Pins NWAGC and SLI, the current of the charge pump can be selected according to the following table: NWAGC LOW HIGH HIGH SLI X LOW HIGH Charge-Pump Current (mA) off 45 mA (slow mode) 250 mA (fast mode)
SAW-Filter Driver
The filters' mixer output signal is applied to the differential input Pins SWI1, SWI2 of a SAW-filter driver which amplifies the result of the mixing process and feeds it via its differential output Pins SWO1, SWO2 to an external SAW filter.
Rev. A1, 28-Jun-99
Preliminary Information
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An overview of the functionality of this block can be seen in figure 8. 3 (10)
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Test conditions (unless otherwise specified): VS = 8.5 V, Tamb = +25C (application circuit see figure 7)
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Operating Range
Supply voltage Ambient temperature Junction ambient Parameters Parameters Pins 11 and 20 Symbol VS Tamb Symbol RthJA Min. 8.0 -40 Value 130 Typ. 8.5 Max. 9.35 +85 Unit K/W Unit V C
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Absolute Maximum Ratings
Electrical Characteristics
Thermal Resistance
U2750B-B
4 (10)
Input frequency range Input impedance
Mixer A, B Mixer output current
Parameters Overall characteristics Supply voltage Supply current Voltage gain Noise figure (double side band) Maximum input level
Parameters Supply voltage Pins 11 and 20 Junction temperature Storage temperature External applied voltage at charge-pump output Pin 1 Band-switch input voltage Pin 3 NWAGC input voltage Pin 14 SLI input voltage Pin 15 Differential input voltage of SAW driver Pins 16 and 17 Mixer output supply voltage Pins 18 and 19 Differential input voltage mixer A,B Pins 22, 23, 24 and 25
Pins 18 and 19 Connected to VS Pins 24, 25, 22 and 23 Pins 24, 25, 22 and 23 Single ended
MXA, MXB Third-order intermodulation distance 30 dBc
Pins 11 and 20 Pins 11 and 20 1) MXA, MXB IF/Port 1) MXA, MXB IF/Port
Test Conditions / Pins
Preliminary Information
w
Symbol VS Tj Tstg VCP VBDSW VNWAGC VSLI VSWI VMXO VMXI
Symbol
VS IS GV tot NFDSB
Pin,max
fin,MX Zin,MX
IO,MX
Min. -0.3
-40 0.4 -0.3 -0.3 -0.3
6.5
Min.
8.0 21.6 30
-25
2.6
70
Typ.
2.3 || 0.9
Typ.
-22
3.3AAAA mA 4.0
8.5 27 32 8
Max. +9.5 125 +125 6.9 +6 +6 +6 300 9.5 50
Rev. A1, 28-Jun-99 Max. 9.35 32.4 34 260 Unit V C C V V V V mVrms V mVrms MHz k pF dBm Unit V mA dB dB
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1) Test conditions (unless otherwise specified): VS = 8.5 V, Tamb = +25C, test circuit see figure 7
Rev. A1, 28-Jun-99
Electrical Characteristics (continued)
LO output impedance SAW Driver Input impedance Output impedance Voltage gain AGC Unit Internal voltage for threshold adjustment Maximum positive charge-pump current, fast mode Maximum negative charge-pump current, fast mode Maximum positive charge-pump current, slow mode Maximum negative charge-pump current, slow mode High-impedance mode charge-pump current Minimum gain-control voltage Maximum gain-control voltage Control voltage at NWAGC Control voltage at NWAGC Control voltage at SLI Control voltage at SLI Band switch Band switch
LO buffer LO output power
VCO Phase noise
Ratio of the output voltage at the primary coil of L4 (Pins 12 and 13) to the input voltage (MXA, MXB). Measurement corrected by loss of transformer.
Parameters
Without external resistor Pin 2 VNWAGC = HIGH, VSLI =HIGH, PRF= -30 dBm, Rth=12 kW Pin 1 VNWAGC = HIGH, VSLI = HIGH, PRF = -25 dBm, Rth = 12 kW Pin 1 VNWAGC = HIGH, VSLI = LOW, PRF = -30 dBm, Rth = 12 kW Pin 1 VNWAGC = HIGH, VSLI = LOW, PRF = -25 dBm, Rth = 12 kW Pin 1 VNWAGC = LOW Pin 1 Pin 1
SLI = HIGH Pin 15 SLI = LOW Pin 15 Pin 3 MXA active MXB active MXA,MXB inactive
NWAGC = LOW
NWAGC = HIGH
Differential, Pins 16 and 17 Single ended, Pins 12 and 13 Pins 16, 17 Pins 12, 13
Differential, Pins 27 and 28
200-W load, differential
Df = 10 kHz
Test Conditions / Pins
Preliminary Information
Pins 27 and 28 Pin 1 Pin 14 Pin 14 VNWAGCH VNWAGCL VBDSWA VBDSWB VBDSWoff VAGCmax VAGCmin ICPneg,sm ICPpos,sm ICPneg,fm ICPpos,fm ZI,SAW ZOSAW GV,SAW Symbol Zout,LO VSLIH VSLIL ICPhi VTH PLO L(f) fLO -300 Min. -50 -55 200 110 4.0 2.0 3.0 3.0 35 26 -250
U2750B-B
Typ.
1.94
-45
250
580 24 18
200
-92
0 5.0
6.9
0.5
45
34
0
Max.
-200
+50
-35
300
300
3.0
1.0
1.5
1.5
55
dBc/Hz MHz
mVrms
Unit
5 (10) A A A A nA dB
W W
W
V V V V V V V V V V
U2750B-B
Typical Operation Characteristics
Operating conditions: VS = 8.5 V, Tamb = 27C, test conditions see figure 7
5 0 p IF ( dBm ) -5 -10 -15 -20 -25 -40 -37 -34 -31 -28 -25 -22 -19 -16
14816
-22 fRF = 240 MHz applied to MXA Port pIF measured at IF Port p RF_th ( dBm) -25 -28 -31 -34 -37 -40 5
14818
fRF = 240 MHz
10
15
20
25
30
35
40
pRF ( dBm )
Rth ( kW )
Figure 3. Overal gain
Figure 5. RF power adjustment by Rth
70 60 dim3 ( dBc) 50 40 30 20 fRF1 = 240 MHz and fRF2 = 241 MHz applied to MXA Port dim3 measured at IF Port
10 -40 -37 -34 -31 -28 -25 -22 -19 -16
14817
pRF ( dBm )
Figure 4. Third-order 2-tone intermodulation ratio
Figure 6. Output impedance SAW-filter driver (Pins 12 and 13 differential)
6 (10)
Rev. A1, 28-Jun-99
Preliminary Information
U2750B-B
Application Circuit (fIF = 38.912 MHz)
fIF = 38.912 MHz MXB L1 100 L3 MXA L2 100 12p 1n PLL U2733B, U2753B 1n LO Port SLI 1n
L1, L2: Toko 617PT-1026 (3T:3Tx2) L3: Toko 600ENS-9272Y (6Tx2) L4: Toko 600ENS-9273X (13T:2T) L5: Air coil enamelled copper wire (3.5T, d = 3.0 mm)
VCC 100n
100p
1n
1n
1n
10n
10n
28
27
26
25
24
23
22
21
20
19
18
17
16
15
U2750B-B
1 1n 3.3 1n 2 3 4 5 6 7 8 9 10 11 12 13 14 NWAGC VCC 10n 10n
100p 270 270
VAGC
2.7p 2.2p 2.2p 2.7p
Rth BDSW L4 4.7k D1 VTune 22k fLO 208...285 MHz 108...285 MHz D1 BB515 BB619 Ck
12487
12p Cp L5
IF Port
Cp 4.7p -
Ck 22p 100p
L5 3.5T, d = 3.0 mm 4.5T, d = 3.0 mm
Figure 7. Application circuit
Rev. A1, 28-Jun-99
7 (10)
Preliminary Information
U2750B-B
AGC-Voltage Generation Block Circuit
BDSW
MAI MBI BUF_IN AGC_BP AGC_RECT 1.94V Mixer 100 AGC_COMP AGC_THRESH 6.48k TH Rth CAGC
12488
AGC_TP SLI NWAGC AGC voltage CP CHARGE PUMP
Figure 8. AGC-voltage generation block circuit
VCO Circuit
VBias VS
C1VC B2VC VTune B1VC C2VC
12489
Figure 9. VCO circuit
8 (10)
Rev. A1, 28-Jun-99
Preliminary Information
U2750B-B
Package Information
Package SSO28
Dimensions in mm
9.10 9.01 5.7 5.3 4.5 4.3
1.30 0.25 0.65 8.45 28 15 0.15 0.05 6.6 6.3 0.15
technical drawings according to DIN specifications
13018
1
14
Rev. A1, 28-Jun-99
9 (10)
Preliminary Information
U2750B-B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423
10 (10)
Rev. A1, 28-Jun-99
Preliminary Information

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