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| DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PINNING PIN 1 2 3 DESCRIPTION Code: R7p base emitter collector 1 Top view age BFR106 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM Vo PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain output voltage up to Ts = 70 C; note 1 IC = 50 mA; VCE = 9 V; Tamb = 25 C IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 C IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; dim = -60 dB; f(p+q-r) = 793.25 MHz open base CONDITIONS open emitter MIN. - - - - 25 - - - TYP. - - - - 80 5 11.5 350 MAX. 20 15 100 500 - - - - GHz dB mV UNIT V V mA mW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 70 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 3 100 500 150 175 UNIT V V V mA mW C C September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F d2 Vo Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM S 21 ------------------------------------------------------------- dB. = 10 log 2 2 1 - S 11 1 - S 22 2 BFR106 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 70 C; note 1 THERMAL RESISTANCE 210 K/W PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain (note 1) noise figure second order intermodulation distortion output voltage CONDITIONS IE = 0; VCB = 10 V IC = 50 mA; VCE = 9 V IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb = 25 C IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb = 25 C note 2 note 3 MIN. - 25 - - - - - - - - TYP. - 80 5 1.5 4.5 1.2 11.5 3.5 -50 350 MAX. 100 - - - - - - - - - UNIT nA GHz pF pF pF dB dB dB mV 2. IC = 30 mA; VCE = 6 V; RL = 75 ; Tamb = 25 C; f(p+q) = 810 MHz; Vo = 100 mV. 3. dim = -60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 ; Tamb = 25 C; f(p+q-r) = 793.25 MHz. September 1995 3 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 600 1/2 page (Datasheet) P tot (mW) 400 MEA398 - 1 MBB774 handbook, halfpage 120 22 mm h FE 80 200 40 0 0 50 100 150 Ts 200 ( o C) 0 0 40 80 I C (mA) 120 VCE = 9 V; Tamb = 25 C. Fig.2 Power derating curve. Fig.3 DC current gain as a function of collector current. handbook, halfpage 8 MBB773 MEA399 handbook, halfpage 40 fT (GHz) 6 G UM (dB) 30 4 20 2 10 0 0 40 80 I C (mA) 120 0 10 10 2 103 f (MHz) 10 4 VCE = 9 V; f = 500 MHz; Tj = 25 C. IC = 30 mA; VCE = 6 V; Tamb = 25 C. Fig.4 Transition frequency as a function of collector current. Fig.5 Maximum unilateral power gain as a function of frequency. September 1995 4 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 handbook, full pagewidth 1 0.5 2 0.2 1200 +j 0 -j 1000 0.2 200 2000 MHz 1500 800 0.5 500 1 2 5 10 5 10 10 0.2 100 40 MHz 5 0.5 1 2 MEA400 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Zo = 50 . Fig.6 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 120 60 150 40 MHz 100 200 500 800 1000 1200 1500 30 + 0 180 50 40 30 20 10 2000 MHz - 150 30 120 IC = 30 mA; VCE = 6 V; Tamb = 25 C. 90 60 MEA403 Fig.7 Common emitter forward transmission coefficient (S21). September 1995 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 handbook, full pagewidth 90 120 60 150 1200 800 0.5 0.4 0.3 0.2 0.1 200 2000 MHz 30 1500 1000 500 100 40 MHz 0 + - 180 150 30 120 90 IC = 30 mA; VCE = 6 V; Tamb = 25 C. 60 MEA402 Fig.8 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 1 0.5 2 0.2 5 10 2 5 10 +j 0 -j 0.2 800 MHz 0.5 1 500 200 10 5 0.2 100 40 MHz 0.5 1 2 MEA401 IC = 30 mA; VCE = 6 V; Tamb = 25 C. Zo = 50 . Fig.9 Common emitter output reflection coefficient (S22). September 1995 6 Philips Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFR106 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 7 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BFR106 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 8 |
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