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| BFR 106 NPN Silicon RF Transistor * For low noise, high-gain amplifiers * For linear broadband amplifiers * Special application: antenna amplifiers * Complementary type: BFR 194 (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 106 R7s Q62702-F1219 1=B 2=E 3=C 4=E Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 3 100 12 mW 700 150 - 65 ... + 150 - 65 ... + 150 110 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 73 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 106 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 100 - V A 100 nA 100 A 10 40 220 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 106 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 0.95 0.25 4.4 - GHz pF 1.5 dB 2.5 4 - IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 10.5 5 12.5 7.5 - IC = 70 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 106 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 15 1.3235 4.1613 1.4602 1.0893 5.0933 35.78 62.059 0.81533 1.2466 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 132.75 0.44125 11.407 1.2652 1.1351 0.85909 0.44444 0 0.46849 0 0 0.92887 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.89608 71.424 0.91008 2.0992 0.27485 0.69062 0.10681 2327.8 0.14496 0.75 1.11 300 fA fA V fF V eV K 0.010016 A 0.028135 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.43 73 84 165 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 106 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot 600 TS 500 400 300 TA 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 P totmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-11-1996 BFR 106 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 3.2 6.0 GHz pF 5.0 Ccb 2.4 fT 4.5 4.0 2.0 3.5 1.6 3.0 2.5 1.2 2.0 0.8 1.5 1.0 0.4 0.5 0.0 0 4 8 12 16 V VR 22 0.0 0 20 40 60 80 5V 3V 2V 1V 0.7V mA IC 120 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 14 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 9.0 dB 10V 5V 3V dB G 10 G 7.0 6.0 5.0 4.0 3.0 5V 3V 2V 8 2V 6 4 1V 2.0 2 0.7V 0 0 20 40 60 80 mA IC 120 1.0 0.0 0 20 40 60 0.7V 80 mA IC 120 1V Semiconductor Group 6 Dec-11-1996 BFR 106 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 14 VCE = Parameter, f = 900MHz 36 0.9GHz dBm 8V 5V IC=70mA dB G 10 0.9GHz IP3 32 30 28 8 1.8GHz 6 1.8GHz 4 3V 26 24 22 20 18 2V 2 16 0 0 2 4 6 8 V 12 14 0 10 20 30 40 1V 50 60 70 V CE 80 mA 100 IC Power Gain Gma, Gms = f(f) VCE = Parameter 45 Power Gain |S21|2= f(f) VCE = Parameter 40 IC=70mA dB dB IC=70mA G 35 30 S21 30 25 25 20 20 15 15 10 10 5 0 -5 0.0 0.7V 10V 1V 5 0 -5 0.0 0.7V 1V 10V 0.5 1.0 1.5 2.0 2.5 3.0 GHz f 4.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-11-1996 |
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