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| PROFET(R) BTS 307 Smart Highside Power Switch * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection * Fast demagnetization of inductive loads * Reverse battery protection1) * Open drain diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Vbb(AZ) Vbb(on) RON IL(ISO) 65 V 5.8 ... 58 V 250 m 1.7 A TO-220AB/5 5 5 1 Straight leads 1 5 Standard SMD * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays, fuses and discrete circuits Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load OUT 2 IN Temperature sensor 5 ESD Logic Load detection Short circuit detection GND 4 ST PROFET Load GND 1 Signal GND 1 ) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 of 12 2003-Oct-01 BTS 307 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Supply voltage for full short circuit protection2) Tj Start=-40 ...+150C Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 5 Symbol Vbb Vbb IL Tj Tstg Ptot VESD VIN IIN IST Values 65 40 self-limited -40 ...+150 -55 ...+150 50 1.0 tbd (>1.0) -0.5 ... +36 2.0 5.0 Unit V V A C W kV V mA Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA min --- Values typ max -2.5 -75 Unit K/W 2) Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher Vbb. Semiconductor Group 2 2003-Oct-01 BTS 307 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A, Vbb = 24 V Tj=25 C: RON -1.4 IL(ISO) IL(GNDhigh) -220 390 1.7 -250 500 -1.1 A mA s m Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=32 V, VIN= 0, see diagram page 6 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Vbb = 20V, Tj =-40...+150C Slew rate on, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150C Slew rate off, 10 to 30% VOUT, RL = 12 , Vbb = 20V, Tj =-40...+150C Operating Parameters Operating voltage 3) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 10 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage protection4) Tj =-40...+150C: Ibb=40 mA Standby current (pin 3), VIN=0 Tj=-40...+150C: 5) Operating current (Pin 1) , VIN=5 V ton toff dV /dton -dV/dtoff 15 20 --- ----- 80 70 6 7 V/s V/s Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) Vbb(AZ) Ibb(off) IGND 5.8 2.7 ---65 ---5.6 0.4 70 58 4.7 4.9 7.5 --- V V V V V V A --- 10 2.2 50 -- mA 3 ) ) 4) 5 At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 6. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 2003-Oct-01 BTS 307 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions6) Initial peak short circuit current limit (pin 3 to 5) Tj =-40C: Tj =25C: =+150C: Tj Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150C: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 7) Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) IL(SCp) --4.0 VON(CL) Tjt 59 150 ---10 ---10 -19 --75 --32 A Tjt -Vbb V C K V IL(off) Tj=-40..150C: VOUT(OL) VON(SC) -2.4 -- 6 3 2.5 -4 -- A V V Open load detection voltage Short circuit detection voltage (pin 3 to 5) Input and Status Feedback8) Input resistance see circuit page 5 Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current (pin 2), VIN = 0.4 V On state input current (pin 2), VIN = 3.5? V Delay time for status with open load after Input neg. slope (see diagram page 10) RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL3) -1 0.8 -1 10 -- 20 --0.5 -25 200 -2.5 --30 70 -- k V V V A A s Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low) 5.4 -- 6.1 -- -0.4 V 6) 7 ) 8) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 6). If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 4 2003-Oct-01 BTS 307 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level Output level Status BTS 307 BTS 707 L L L H H H 9 ) L H H H H L L L H L L L H H H H H L L L H L L L L L H L L no overvoltage shutdown, see normal operation X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 10) Terms Ibb I IN 2 I ST V V bb IN VST 4 ST GND 1 R GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 0 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN I Short circuit detection Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by the PROFET itself, external switch off recommended! + V bb ESD-ZD I GND I I V ON OUT ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Logic unit Short circuit detection 9 ) Power Transistor off, high impedance, internal pull up current source for open load detection. Semiconductor Group 5 2003-Oct-01 BTS 307 Inductive and overvoltage output clamp + V bb V Z GND disconnect 3 IN Vbb PROFET 4 V bb V IN VST ST GND 1 V GND OUT +5V 2 12k VON 5 OUT GND PROFET VON clamped to -- V typ. For Vbb=24V and VIN=0V: VST>2.8V @ IST 0 if pulled up as shown. Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Overvolt. and reverse batt. protection + V bb V Z2 GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 V V bb V IN ST V OUT R IN IN RI Logic 2 ST V Z1 5 R ST PROFET GND R GND Signal GND GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , RST= 15 k, RI= 20 k typ. Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive load 3 high 2 IN Vbb PROFET 4 I OUT 5 ST GND 1 OFF L(OL) V Logic unit Open load detection bb V OUT Normal load current can be handled by the PROFET itself. Signal GND Semiconductor Group 6 2003-Oct-01 BTS 307 Vbb disconnect with charged external inductive load S high 2 IN 3 Vbb Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad IN PROFET OUT 5 D 4 ST GND 1 = ST GND ZL V bb { L RL ER If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : EAS= IL* L IL*RL *(Vbb + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL 2 Semiconductor Group 7 2003-Oct-01 BTS 307 Options Overview all versions: High-side switch, Input protection, ESD protectionand reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 410D2 410E2 410G2 410H2 D E G H 307 308 Overtemperature protection with hysteresis Tj >150 C, latch function10)11) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>3.5 V typ. and Vbb> 8 V typ10) (when first turned on after approx. 150 s) switches off when VON>8.5 V typ.10) (when first turned on after approx. 150 s) Achieved through overtemperature protection X X X X X X X X X X X X X X X X X -12) X X X X X X X X X X X X X 12) X Open load detection in OFF-state with sensing current 6 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X -12) X X X X X X X X X X X X X X X X X X X - Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage X - Status output type CMOS Open drain X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) Protection against loss of GND ) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 11) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 12) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 10 Semiconductor Group 8 2003-Oct-01 BTS 307 Timing diagrams Figure 1a: Vbb turn on, : Figure 3a: Short circuit: shut down by overtempertature, reset by cooling IN IN V bb t d(bb IN) V OUT normal operation Output short to GND V OUT I L I L(SCp) I L(SCr) A ST open drain t ST t Heating up requires several milliseconds, depending on external conditions. External shutdown in response to status fault signal recommended. A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s Figure 2a: Switching an inductive load, Figure 4a: Overtemperature: Reset if Tj IN ST ST V OUT V OUT I T L J t t Semiconductor Group 9 2003-Oct-01 BTS 307 Figure 6a: Undervoltage: Figure 5a: Open load, : detection in OFF-state, turn on/off to open load IN IN V ST t d(ST OL3) bb V bb(under) Vbb(u cp) V bb(u rst) V OUT V OUT I ST open drain L open normal t *) t Figure 6b: Undervoltage restart of charge pump td(ST,OL3) depends on external circuitry because of high impedance *) IL = 6 A typ V on Figure 5b: Open load, : detection in OFF-state, open load occurs in off-state IN off-state ST V V OUT bb(u V V bb(u cp) V OUT(OL) bb(under) on-state Vbb charge pump starts at Vbb(ucp) =5.6 V typ. I L normal *) open normal *) t *) IL = 6 A typ Semiconductor Group 10 2003-Oct-01 BTS 307 Figure 7a: Overvoltage, no shutdown: IN Vbb VON(CL) V OUT VOUT(OL) ST t Semiconductor Group 11 2003-Oct-01 BTS 307 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 307 Ordering code tbd SMD TO-220AB/5, Opt. E3062 Ordering code BTS 307 E3062A T&R: C67078-S5204-A4 TO-220AB/5, Option E3043 Ordering code BTS 307 E3043 C67078-S5204-A3 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 12 2003-Oct-01 |
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