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| SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBN00340 Io = 30mA VR = 40 Volt s Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ. 1206 (3216) Mechanical data Case: 12063(3216)Standard package, molded plastic. Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.0085 gram. (approximately) 0.010(R0.25) Typ. 0.063(1.60) 0.055(1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current, surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit VRRM VR Io 45 40 30 500 200 -40 -40 +125 +125 V V mA mA mW C C 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) IFSM PD TSTG Tj Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Reverse current Capacitance between terminals VR = 40 V VR = 30 V f = 1MHz, and 1 VDC reverse voltage Conditions I F = 1 mA DC Symbol Min Typ Max Unit VF IR IR CT 2 0.37 1.00 0.50 V uA uA pF RDS0208006-C Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBN00340) Fig. 1 - Forward characteristics 10m 100u Fig. 1 - Forward characteristics Reverse current ( A ) Forward current ( A ) 10u 125 C 1m 75 C 1u 12 5 C 75 C 25 -2 5 C 100u C 100n 25 C 10u 0 0.1 0.2 0.3 0.4 0.5 0.6 10n 0 10 20 30 40 Forward voltage (V) Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Capacitance between terminals (pF) 20 Fig. 4 - Derating curve f = 1 MHz Ta = 25 C Average forward current ( % ) Mounting on glass epoxy PCBs 100 10 80 60 1 40 20 0.1 0 5 10 15 0 20 25 30 0 25 50 75 100 125 150 Reverse voltage (V) Ambient temperature ( C ) RDS0208006-C Page 2 |
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