View CXA2726GA_440927.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PDIC for DVDR/RW and RAM
Preliminary
PreliminaryCXA2726GA
Description
The CXA2726GA is a PDIC (photodetector IC) developed as a photodetector for the optical pickup of DVDR/RW and RAM drives. The photodiode and circuits operate at high speed to allow high-speed read and write. This IC also has a sleep function and small COB (Chip On Board) package. (Applications: Optical pickups for DVDR/RW and RAM)
Features
Wide band (120MHz) RF differential output (Read Mode: A to D signal addition output) WPP output (WPP1 = A + B, WPP2 = C + D signal addition output) Mode switching function (6-Mode switching + Power save mode: SW1, SW2) 12-division photodiode supporting DPP Small COB package of Land Grid Array type Sleep function (Power save mode)
Package
18-pin LFLGA (Plastic)
Structure
Bipolar silicon monolithic IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
PE05717-PS
CXA2726GA
Absolute Maximum Ratings
(Ta = 25C) Supply voltage Operating temperature Storage temperature Allowable power dissipation VCC Topr Tstg PD 5.5 -10 to +80 -40 to +100 550 V
C C
mW
Operating Conditions
Supply voltage 1 Supply voltage 2 SW1, SW2: Low SW1, SW2: Middle SW1, SW2: High VCC VC VSW VSW VSW 4.5 to 5.5 1.3 to 2.5 0 to 0.4 1.2 to 2.0 2.9 to VCC V V V V V or OPEN
Output Sensitivity Table
Mode 1 2 3 4 5 6 SLEEP Sleep Write Name Read SW1 Low Low Middle Middle High/Hi-Z High/Hi-Z Don't care SW2 Middle High/Hi-Z Middle High/Hi-Z Middle High/Hi-Z Low Main 10.00 22.40 1.30 2.91 1.00 2.24 -- Sub 40.20 90.00 5.23 11.71 4.02 9.01 -- RF 8.95 20.10 -- -- -- -- -- WPP 1.67 3.73 0.87 1.95 0.67 1.50 -- mV/W Unit
-2-
CXA2726GA
Block Diagram
A' A 6 Vc
A
9
SW1
3 B' B 8 Vc B 2
SW2
Vcc
C' C C 13 Vc
10 Vc
1 GND D' D D 11 Vc 12 NC
E Vc I E+I 7 Vc A B 5 WPP1
F J F+J 4 Vc
Vc C D 14 WPP2
G Vc K G+K 17 Vc Vc A' B' C' D' H L H+L 15 Vc Vcc Vc 16 RF- 18 RF+
Arithmetic Formulas RF+ = 0.895 x (Ao + Bo + Co + Do) RF- = -0.895 x (Ao + Bo + Co + Do) WPP1 = (Ao + Bo) x WPP2 = (Co + Do) x * In each mode, is as follows. Mode1 and 2 : 0.167 Mode3 to 6 : 0.669 * RF+ and RF- operate only in Mode-1 and Mode-2.
-3-
CXA2726GA
Pin Configuration
(Top View)
14 WPP2 10 Vc
15 H+L 11 D 6 A
16 RF- 12 NC 7 E+I 3 SW2
17 G+K 13 C 8 B 4 F+J
18 RF+
9 SW1 5 WPP1
1 GND
2 VCC
Pin Description
Pin No.
Symbol
I/O
Equivalent circuit
Description
1
GND
I
1
For a dual power supply: Negative power supply For a single power supply: GND
2
VCC
I
Positive power supply.
30k
3
SW2
I
1k 3
Mode switching input. 0 to 0.4V: Low 1.2 to 2.0V: Middle 2.9V to VCC: High
-4-
CXA2726GA
Pin No.
Symbol
I/O
Equivalent circuit
Description
7 4 17 15
E+I F+J G+K H+L
7
O
4 17 15
Output of voltage signals converted from optical signals.
5 14
WPP1 WPP2
3k
Non-inverted output of added A to D signals. WPP1 = A + B WPP2 = C + D
O
5 14 9k 6k 6k
6 8 13 11
A B C D
6
O
8 13 11
Output of voltage signals converted from optical signals.
60k
9
SW1
I
1k 9
Mode switching input. 0 to 0.4V: Low 1.2 to 2.0V: Middle 2.9V to VCC: High
10
VC
I
10
For a dual power supply: GND For a single power supply: Center voltage input
-5-
CXA2726GA
Pin No.
Symbol
I/O
Equivalent circuit
Description
16
RF-
O
16
Inverted output of added A to D signals.
18
RF+
O
18
Non-inverted output of added A to D signals.
-6-
CXA2726GA
Electrical and Optical Characteristics 1 (Mode-1: Read Mode/Low Gain)
(VCC = 5.0V, VC = 1.4V, VSW1 = 0V, VSW2 = 1.65V, Ta = 25C) Item Current consumption Output offset voltage (A to D) Output offset voltage (E+I to H+L) Output offset voltage (WPP1, WPP2) Output offset voltage (RF+) Output offset voltage (RF-) Symbol ICC Voff Voff Voff Voff Voff In the dark In the dark, VC reference In the dark, VC reference In the dark, VC reference In the dark, VC reference In the dark, VCC - VC reference (A + B) - (C + D), In the dark (A + D) - (B + C), In the dark (A + C) - (B + D), In the dark Output offset matrix Voff (G + H + K + L) - (E + F + I + J), In the dark A + B + C + D, In the dark E + F + G + H + I + J + K + L, In the dark (RF+) - (RF-), In the dark Offset temperature drift (A to D) * Offset temperature drift (E+I to H+L) * Offset temperature drift (WPP1, WPP2) * Offset temperature drift (RF+, RF-) * Output voltage (A to D) * Output voltage (E+I to H+L) * Output voltage (WPP1, WPP2) * Output voltage (RF+) * Output voltage (RF-) * Output voltage ratio (E+I to H+L)/(A to D) * Voff/T Voff/T Voff/T Voff/T Vo Vo Vo Vo Vo VOR In the dark In the dark In the dark In the dark = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 1mW Conditions Min. -- -30 -35 -30 -110 -110 -30 -30 -30 -30 -50 -50 -160 -100 -150 -100 -1 7.5 30.15 1.25 6.71 -11.19 3.91 1.77 Typ. 44.0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 10.0 40.20 1.67 8.95 -8.95 4.12 1.86 Max. 57.5 30 35 30 110 110 30 30 30 30 50 50 160 100 150 100 1 12.5 Unit mA mV mV mV mV mV mV mV mV mV mV mV mV V/C V/C V/C mV/C mV/W
50.25 mV/W 2.09 mV/W
11.19 mV/W -6.71 mV/W 4.33 1.95 -- --
Output voltage ratio VOR ((RF+) + (RF-))/(A to D) * Maximum output potential (A to D, E+I to H+L) Vomax
3.8
4.0
--
V
-7-
CXA2726GA
Item Maximum output potential (WPP1, WPP2) Maximum output potential (RF+) Minimum output potential (RF-) Frequency response (A to D) * Frequency response (E+I to H+L) * Frequency response (WPP1, WPP2) * Frequency response ((RF+) - (RF-)) * Group delay difference 1 (A to D) * Group delay difference 1 (WPP1, WPP2) * Group delay difference 1 ((RF+) - (RF-)) * Group delay difference 2 (A to D) * Group delay difference 2 (WPP1, WPP2) * Group delay difference 2 ((RF+) - (RF-)) * Slew rate (A to D) * Slew rate (E+I to H+L) * Slew rate (RF+, RF-) * Output noise level (A to D) * Output noise level (RF+, RF-)
Symbol Vomax
Conditions = 650nm, 780nm, Po = 1mW
Min. 2.0
Typ. 2.2
Max. --
Unit V
Vomax
= 650nm, 780nm, Po = 1mW = 650nm, 780nm, Po = 1mW = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB 100kHz to 70MHz 100kHz to 70MHz 100kHz to 70MHz 100kHz to 90MHz 100kHz to 90MHz 100kHz to 90MHz Calculated at 10% to 90% Calculated at 10% to 90% Calculated at 10% to 90% RBW = 30kHz, f = 1 to 90MHz, In the dark RBW = 30kHz, f = 1 to 90MHz, In the dark
3.8
4.0
--
V
Vomin
--
1.0
1.2
V
fc
90
120
--
MHz
fc
20
30
--
MHz
fc
90
120
--
MHz
fc Gd1 Gd1 Gd1 Gd2 Gd2 Gd2 SR SR SR Vn Vn
90
120
--
MHz
-- -- -- -- -- -- -- -- -- -- --
1.0 1.1 0.9 1.0 1.8 1.0 250 170 225 -87 -81
-- -- -- -- -- -- -- -- -- -82 -75
ns ns ns ns ns ns V/s V/s V/s dBm dBm
Note) 1. Output offset voltage: VC is the reference. 2. The output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. Items with an asterisk (*) are design confirmation items. 4. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode. 5. The load conditions (for VC) are as follows. A to D: 2k//20pF, E+I to H+L, WPP1, WPP2: 6k//20pF, RF+, RF-: (1F + (1.3k//10pF))//10pF
-8-
CXA2726GA
Electrical and Optical Characteristics 2 (Mode-2: Read Mode/High Gain)
(VCC = 5.0V, VC = 1.4V, VSW1 = 0V, VSW2 = 3.3V, Ta = 25C) Item Current consumption Output offset voltage (A to D) Output offset voltage (E+I to H+L) Output offset voltage (WPP1, WPP2) Output offset voltage (RF+) Output offset voltage (RF-) Symbol ICC Voff Voff Voff Voff Voff In the dark In the dark, VC reference In the dark, VC reference In the dark, VC reference In the dark, VC reference In the dark, VCC - VC reference (A + B) - (C + D), In the dark (A + D) - (B + C), In the dark (A + C) - (B + D), In the dark Output offset matrix Voff (G + H + K + L) - (E + F + I + J), In the dark A + B + C + D, In the dark E + F + G + H + I + J + K + L, In the dark (RF+) - (RF-), In the dark Offset temperature drift (A to D) * Offset temperature drift (E+I to H+L) * Offset temperature drift (WPP1, WPP2) * Offset temperature drift (RF+, RF-) * Output voltage (A to D) * Output voltage (E+I to H+L) * Output voltage (WPP1, WPP2) * Output voltage (RF+) * Output voltage (RF-) * Output voltage ratio (E+I to H+L)/(A to D) * Voff/T Voff/T Voff/T Voff/T Vo Vo Vo Vo Vo VOR In the dark In the dark In the dark In the dark = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 10W = 650nm, 780nm, Po = 1mW Conditions Min. -- -30 -35 -30 -110 -110 -30 -30 -30 -30 -50 -50 -160 -100 -150 -100 -1 16.8 67.5 2.79 15.0 -25.1 3.88 1.79 Typ. 44.0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 22.4 90.0 3.73 20.1 -20.1 4.08 1.88 Max. 57.5 30 35 30 110 110 30 30 30 30 50 50 160 100 150 100 1 28.0 Unit mA mV mV mV mV mV mV mV mV mV mV mV mV V/C V/C V/C mV/C mV/W
112.5 mV/W 4.67 25.1 mV/W mV/W
-15.0 mV/W 4.28 1.97 -- --
Output voltage ratio VOR ((RF+) + (RF-))/(A to D) * Maximum output potential (A to D, E+I to H+L) Vomax
3.8
4.0
--
V
-9-
CXA2726GA
Item Maximum output potential (WPP1, WPP2) Maximum output potential (RF+) Minimum output potential (RF-) Frequency response (A to D) * Frequency response (E+I to H+L) * Frequency response (WPP1, WPP2) * Frequency response ((RF+) - (RF-)) * Group delay difference 1 (A to D) * Group delay difference 1 (WPP1, WPP2) * Group delay difference 1 ((RF+) - (RF-)) * Group delay difference 2 (A to D) * Group delay difference 2 (WPP1, WPP2) * Group delay difference 2 ((RF+) - (RF-)) * Slew rate (A to D) * Slew rate (E+I to H+L) * Slew rate (RF+, RF-) * Output noise level (A to D) * Output noise level (RF+, RF-)
Symbol Vomax
Conditions = 650nm, 780nm, Po = 1mW
Min. 2.0
Typ. 2.2
Max. --
Unit V
Vomax
= 650nm, 780nm, Po = 1mW = 650nm, 780nm, Po = 1mW = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB 100kHz to 70MHz 100kHz to 70MHz 100kHz to 70MHz 100kHz to 90MHz 100kHz to 90MHz 100kHz to 90MHz Calculated at 10% to 90% Calculated at 10% to 90% Calculated at 10% to 90% RBW = 30kHz, f = 1 to 90MHz, In the dark RBW = 30kHz, f = 1 to 90MHz, In the dark
3.8
4.0
--
V
Vomin
--
1.0
1.2
V
fc
90
120
--
MHz
fc
20
30
--
MHz
fc
90
120
--
MHz
fc Gd1 Gd1 Gd1 Gd2 Gd2 Gd2 SR SR SR Vn Vn
90
120
--
MHz
-- -- -- -- -- -- -- -- -- -- --
1.2 1.2 1.0 1.5 1.8 1.0 250 180 225 -80 -74
-- -- -- -- -- -- -- -- -- -75 -69
ns ns ns ns ns ns V/s V/s V/s dBm dBm
Note) 1. Output offset voltage: VC is the reference. 2. The output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. Items with an asterisk (*) are design confirmation items. 4. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode. 5. The load conditions (for VC) are as follows. A to D: 2k//20pF, E+I to H+L, WPP1, WPP2: 6k//20pF, RF+, RF-: (1F + (1.3k//10pF))//10pF
- 10 -
CXA2726GA
Electrical and Optical Characteristics 3 (Mode-3: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 1.65V, VSW2 = 1.65V, Ta = 25C) Item Current consumption Output offset voltage (A to D) Output offset voltage (E+I to H+L) Output offset voltage (WPP1, WPP2) Symbol ICC Voff Voff Voff In the dark In the dark, VC reference In the dark, VC reference In the dark, VC reference (A + B) - (C + D), In the dark (A + D) - (B + C), In the dark (A + C) - (B + D), In the dark Output offset matrix Voff (G + H + K + L) - (E + F + I + J), In the dark A + B + C + D, In the dark E + F + G + H + I + J + K + L, In the dark Offset temperature drift (A to D) * Offset temperature drift (E+I to H+L) * Offset temperature drift (WPP1, WPP2) * Output voltage (A to D) Output voltage (E+I to H+L) Output voltage (WPP1, WPP2) Output voltage ratio (E+I to H+L)/(A to D) Maximum output potential (A to D, E+I to H+L, WPP1, WPP2) Frequency response (A to D) * Frequency response (E+I to H+L) * Frequency response (WPP1, WPP2) * Voff/T Voff/T Voff/T Vo Vo Vo VOR In the dark In the dark In the dark = 650nm, 780nm, Po = 350W = 650nm, 780nm, Po = 350W = 650nm, 780nm, Po = 350W = 650nm, 780nm, Po = 350W Conditions Min. -- -30 -35 -30 -30 -30 -30 -30 -50 -50 -100 -150 -100 0.98 3.92 0.65 3.89 Typ. 39.0 0 0 0 0 0 0 0 0 0 0 0 0 1.30 5.23 0.87 4.09 Max. 51.0 30 35 30 30 30 30 30 50 50 100 150 100 1.63 6.54 1.09 4.29 Unit mA mV mV mV mV mV mV mV mV mV V/C V/C V/C mV/W mV/W mV/W --
Vomax
= 650nm, 780nm, Po = 1mW = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB
3.3
3.5
--
V
fc
90
120
--
MHz
fc
25
60
--
MHz
fc
100
130
--
MHz
- 11 -
CXA2726GA
Item Group delay difference 1 (A to D, WPP1, WPP2) * Group delay difference 2 (A to D, WPP1, WPP2) * Settling time (A to D) * Settling time (E+I to H+L) * Settling time (WPP1, WPP2) * Settling time (WPP1, WPP2) * Slew rate (A to D) * Slew rate (E+I to H+L) * Slew rate (WPP1, WPP2) * Output noise level (A to D) * Output noise level (WPP1, WPP2) *
Symbol Gd1 Gd2 Tset Tset Tset Tset SR SR SR Vn Vn
Conditions 100kHz to 70MHz 100kHz to 90MHz Output 299mV 15 3mV Output 323mV 6.5 1.3mV Output 20mV 399 4mV Output 399mV 20 4mV Calculated at 10% to 90% Calculated at 10% to 90% Calculated at 10% to 90% RBW = 30kHz, f = 1 to 90MHz, In the dark RBW = 30kHz, f = 1 to 90MHz, In the dark
Min. -- -- -- -- -- -- -- -- -- -- --
Typ. 1.0 1.9 18.0 27.0 15.0 15.0 210 200 260 -93 -89
Max. -- -- -- -- -- -- -- -- -- -88 -84
Unit ns ns ns ns ns ns V/s V/s V/s dBm dBm
Note) 1. Output offset voltage: VC is the reference. 2. The output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. Items with an asterisk (*) are design confirmation items. 4. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode. 5. The load conditions (for VC) are as follows. A to D: 2k//20pF, E+I to H+L, WPP1, WPP2: 6k//20pF
- 12 -
CXA2726GA
Electrical and Optical Characteristics 4 (Mode-4: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 1.65V, VSW2 = 3.3V, Ta = 25C) Item Current consumption Output offset voltage (A to D) Output offset voltage (E+I to H+L) Output offset voltage (WPP1, WPP2) Symbol ICC Voff Voff Voff In the dark In the dark, VC reference In the dark, VC reference In the dark, VC reference (A + B) - (C + D), In the dark (A + D) - (B + C), In the dark (A + C) - (B + D), In the dark Output offset matrix Voff (G + H + K + L) - (E + F + I + J), In the dark A + B + C + D, In the dark E + F + G + H + I + J + K + L, In the dark Offset temperature drift (A to D) * Offset temperature drift (E+I to H+L) * Offset temperature drift (WPP1, WPP2) * Output voltage (A to D) Output voltage (E+I to H+L) Output voltage (WPP1, WPP2) Output voltage ratio (E+I to H+L)/(A to D) Maximum output potential (A to D, E+I to H+L, WPP1, WPP2) Frequency response (A to D) * Frequency response (E+I to H+L) * Frequency response (WPP1, WPP2) * Voff/T Voff/T Voff/T Vo Vo Vo VOR In the dark In the dark In the dark = 650nm, 780nm, Po = 175W = 650nm, 780nm, Po = 175W = 650nm, 780nm, Po = 175W = 650nm, 780nm, Po = 175W Conditions Min. -- -30 -35 -30 -30 -30 -30 -30 -50 -50 -100 -150 -100 2.73 8.78 1.46 3.78 Typ. 39.0 0 0 0 0 0 0 0 0 0 0 0 0 2.91 11.71 1.95 3.98 Max. 51.0 30 35 30 30 30 30 30 50 50 100 150 100 3.41 14.63 2.44 4.18 Unit mA mV mV mV mV mV mV mV mV mV V/C V/C V/C mV/W mV/W mV/W --
Vomax
= 650nm, 780nm, Po = 1mW = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB
3.5
3.7
--
V
fc
90
120
--
MHz
fc
30
50
--
MHz
fc
100
130
--
MHz
- 13 -
CXA2726GA
Item Group delay difference 1 (A to D, WPP1, WPP2) * Group delay difference 2 (A to D, WPP1, WPP2) * Settling time (A to D) * Settling time (E+I to H+L) * Settling time (WPP1, WPP2) * Settling time (WPP1, WPP2) * Slew rate (A to D) * Slew rate (E+I to H+L) * Slew rate (WPP1, WPP2) * Output noise level (A to D) * Output noise level (WPP1, WPP2) *
Symbol Gd1 Gd2 Tset Tset Tset Tset SR SR SR Vn Vn
Conditions 100kHz to 70MHz 100kHz to 90MHz Output 690mV 34.5 6.9mV Output 745mV 14.9 3mV Output 920mV 46 9.2mV Output 46mV 920 9.2mV Calculated at 10% to 90% Calculated at 10% to 90% Calculated at 10% to 90% RBW = 30kHz, f = 1 to 90MHz, In the dark RBW = 30kHz, f = 1 to 90MHz, In the dark
Min. -- -- -- -- -- -- -- -- -- -- --
Typ. 1.4 2.4 18.0 27.0 15.0 15.0 250 200 260 -87 -85
Max. -- -- -- -- -- -- -- -- -- -82 -80
Unit ns ns ns ns ns ns V/s V/s V/s dBm dBm
Note) 1. Output offset voltage: VC is the reference. 2. The output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. Items with an asterisk (*) are design confirmation items. 4. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode. 5. The load conditions (for VC) are as follows. A to D: 2k//20pF, E+I to H+L, WPP1, WPP2: 6k//20pF
- 14 -
CXA2726GA
Electrical and Optical Characteristics 5 (Mode-5: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 3.3V, VSW2 = 1.65V, Ta = 25C) Item Current consumption Output offset voltage (A to D) Output offset voltage (E+I to H+L) Output offset voltage (WPP1, WPP2) Symbol ICC Voff Voff Voff In the dark In the dark, VC reference In the dark, VC reference In the dark, VC reference (A + B) - (C + D), In the dark (A + D) - (B + C), In the dark (A + C) - (B + D), In the dark Output offset matrix Voff (G + H + K + L) - (E + F + I + J), In the dark A + B + C + D, In the dark E + F + G + H + I + J + K + L, In the dark Offset temperature drift (A to D) * Offset temperature drift (E+I to H+L) * Offset temperature drift (WPP1, WPP2) * Output voltage (A to D) Output voltage (E+I to H+L) Output voltage (WPP1, WPP2) Output voltage ratio (E+I to H+L)/(A to D) Maximum output potential (A to D, E+I to H+L, WPP1, WPP2) Frequency response (A to D) * Frequency response (E+I to H+L) * Frequency response (WPP1, WPP2) * Voff/T Voff/T Voff/T Vo Vo Vo VOR In the dark In the dark In the dark = 650nm, 780nm, Po = 350W = 650nm, 780nm, Po = 350W = 650nm, 780nm, Po = 350W = 650nm, 780nm, Po = 350W Conditions Min. -- -30 -35 -30 -30 -30 -30 -30 -50 -50 -100 -150 -1 0.75 3.01 0.50 3.95 Typ. 39.0 0 0 0 0 0 0 0 0 0 0 0 0 1.00 4.02 0.67 4.16 Max. 51.0 30 35 30 30 30 30 30 50 50 100 150 1 1.25 5.03 0.84 4.37 Unit mA mV mV mV mV mV mV mV mV mV V/C V/C mV/C mV/W mV/W mV/W --
Vomax
= 650nm, 780nm, Po = 1mW = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB
3.3
3.5
--
V
fc
90
120
--
MHz
fc
50
75
--
MHz
fc
95
150
--
MHz
- 15 -
CXA2726GA
Item Group delay difference 1 (A to D, WPP1, WPP2) * Group delay difference 2 (A to D, WPP1, WPP2) * Settling time (A to D) * Settling time (E+I to H+L) * Settling time (WPP1, WPP2) * Settling time (WPP1, WPP2) * Slew rate (A to D) * Slew rate (E+I to H+L) * Slew rate (WPP1, WPP2) * Output noise level (A to D) * Output noise level (WPP1, WPP2) *
Symbol Gd1 Gd2 Tset Tset Tset Tset SR SR SR Vn Vn
Conditions 100kHz to 70MHz 100kHz to 90MHz Output 230mV 11.5 2.3mV Output 248mV 5 1mV Output 306.7mV 15.3 3.1mV Output 15.3mV 306.7 3.1mV Calculated at 10% to 90% Calculated at 10% to 90% Calculated at 10% to 90% RBW = 30kHz, f = 1 to 90MHz, In the dark RBW = 30kHz, f = 1 to 90MHz, In the dark
Min. -- -- -- -- -- -- -- -- -- -- --
Typ. 1.4 2.4 15.0 24.0 15.0 15.0 210 200 260 -93 -89
Max. -- -- -- -- -- -- -- -- -- -88 -84
Unit ns ns ns ns ns ns V/s V/s V/s dBm dBm
Note) 1. Output offset voltage: VC is the reference. 2. The output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. Items with an asterisk (*) are design confirmation items. 4. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode. 5. The load conditions (for VC) are as follows. A to D: 2k//20pF, E+I to H+L, WPP1, WPP2: 6k//20pF
- 16 -
CXA2726GA
Electrical and Optical Characteristics 6 (Mode-6: Write Mode)
(VCC = 5.0V, VC = 1.4V, VSW1 = 3.3V, VSW2 = 3.3V, Ta = 25C) Item Current consumption Output offset voltage (A to D) Output offset voltage (E+I to H+L) Output offset voltage (WPP1, WPP2) Symbol ICC Voff Voff Voff In the dark In the dark, VC reference In the dark, VC reference In the dark, VC reference (A + B) - (C + D), In the dark (A + D) - (B + C), In the dark (A + C) - (B + D), In the dark Output offset matrix Voff (G + H + K + L) - (E + F + I + J), In the dark A + B + C + D, In the dark E + F + G + H + I + J + K + L, In the dark Offset temperature drift (A to D) * Offset temperature drift (E+I to H+L) * Offset temperature drift (WPP1, WPP2) * Output voltage (A to D) Output voltage (E+I to H+L) Output voltage (WPP1, WPP2) Output voltage ratio (E+I to H+L)/(A to D) Maximum output potential (A to D, E+I to H+L, WPP1, WPP2) Frequency response (A to D) * Frequency response (E+I to H+L) * Frequency response (WPP1, WPP2) * Voff/T Voff/T Voff/T Vo Vo Vo VOR In the dark In the dark In the dark = 650nm, 780nm, Po = 175W = 650nm, 780nm, Po = 175W = 650nm, 780nm, Po = 175W = 650nm, 780nm, Po = 175W Conditions Min. -- -30 -35 -30 -30 -30 -30 -30 -50 -50 -100 -150 -100 1.68 6.75 1.12 3.83 Typ. 39.0 0 0 0 0 0 0 0 0 0 0 0 0 2.24 9.01 1.50 4.03 Max. 51.0 30 35 30 30 30 30 30 50 50 100 150 100 2.80 Unit mA mV mV mV mV mV mV mV mV mV V/C V/C V/C mV/W
11.26 mV/W 1.88 4.23 mV/W --
Vomax
= 650nm, 780nm, Po = 1mW = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB = 650nm, 780nm Po = 10WDC + 4Wp-p 100kHz reference, -3dB
3.5
3.7
--
V
fc
90
120
--
MHz
fc
35
60
--
MHz
fc
95
150
--
MHz
- 17 -
CXA2726GA
Item Group delay difference 1 (A to D, WPP1, WPP2) * Group delay difference 2 (A to D, WPP1, WPP2) * Settling time (A to D) * Settling time (E+I to H+L) * Settling time (WPP1, WPP2) * Settling time (WPP1, WPP2) * Slew rate (A to D) * Slew rate (E+I to H+L) * Slew rate (WPP1, WPP2) * Output noise level (A to D) * Output noise level (WPP1, WPP2) *
Symbol Gd1 Gd2 Tset Tset Tset Tset SR SR SR Vn Vn
Conditions 100kHz to 70MHz 100kHz to 90MHz Output 515mV 25.8 5.2mV Output 556.6mV 11.1 2.2mV Output 687mV 34.4 6.9mV Output 34.4mV 687 6.9mV Calculated at 10% to 90% Calculated at 10% to 90% Calculated at 10% to 90% RBW = 30kHz, f = 1 to 90MHz, In the dark RBW = 30kHz, f = 1 to 90MHz, In the dark
Min. -- -- -- -- -- -- -- -- -- -- --
Typ. 1.2 2.3 15.0 24.0 15.0 15.0 250 200 260 -87 -85
Max. -- -- -- -- -- -- -- -- -- -82 -80
Unit ns ns ns ns ns ns V/s V/s V/s dBm dBm
Note) 1. Output offset voltage: VC is the reference. 2. The output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. Items with an asterisk (*) are design confirmation items. 4. Measurement by optical input: Measurement is made by emitting light to the center of each photodiode. 5. The load conditions (for VC) are as follows. A to D: 2k//20pF, E+I to H+L, WPP1, WPP2: 6k//20pF
- 18 -
CXA2726GA
Electrical and Optical Characteristics 7 (Read to Write Mode Switching Characteristics)
(VCC = 5.0V, VC = 1.4V, Ta = 25C) Item Mode switching time (A to D, RF+, RF-) Symbol Tset Conditions = 650nm, 780nm, Po = 5W Output level 2% (Read mode Write mode) Min. -- Typ. 180 Max. -- Unit ns
Electrical and Optical Characteristics 8 (Sleep Mode)
(VCC = 5.0V, VC = 1.4V, VSW2 = 0V, Ta = 25C) Item Current consumption Symbol ICC In the dark Conditions Min. -- Typ. 0.7 Max. 1.0 Unit mA
- 19 -
CXA2726GA
Measurement Circuit
6
A
Vcc
2 Vcc
8
B
Vc 10 Vc
13 C
GND
1
11 D
RF+ 18
7
E+I
RF- 16
4
F+J
WPP1
5
17 G+K
WPP2 14
15 H+L
SW1
9
12 NC
SW2
3
The load conditions are as follows. A to D : 2k//20pF E+I to H+L, WPP1, WPP2 : 6k//20pF RF+, RF- : (1F + (1.3k//10pF))//10pF
- 20 -
CXA2726GA
Photodetector Pattern Dimensions
(Unit: m) * Division line width: 4m
Top View 120
L I
170 100
K J
9 120
A
170
B
9
H E
120
G F
120
- 21 -
100
D
C
CXA2726GA
Example of Representative Characteristics (Frequency Response)
Mode-1
A to D frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
E+I to H+L frequency response
WPP1 and WPP2 frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M
RF+ and RF- frequency response
10M 100M Frequency [Hz]
1G
- 22 -
CXA2726GA
Mode-2
A to D frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
E+I to H+L frequency response
WPP1 and WPP2 frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M
RF+ and RF- frequency response
10M 100M Frequency [Hz]
1G
- 23 -
CXA2726GA
Mode-3
A to D frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
E+I to H+L frequency response
WPP1 and WPP2 frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
- 24 -
CXA2726GA
Mode-4
A to D frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
E+I to H+L frequency response
WPP1 and WPP2 frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
- 25 -
CXA2726GA
Mode-5
A to D frequency response
2 0 -2 -4 Gain [dB] Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
E+I to H+L frequency response
WPP1 and WPP2 frequency response
4 2 0 -2 Gain [dB] -4 -6 -8 -10 -12 -14 1M 10M 100M Frequency [Hz] 1G
- 26 -
CXA2726GA
Mode-6
A to D frequency response
2 0 -2 -4 Gain [dB] -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G Gain [dB] 2 0 -2 -4 -6 -8 -10 -12 -14 -16 1M 10M 100M Frequency [Hz] 1G
E+I to H+L frequency response
WPP1 and WPP2 frequency response
4 2 0 -2 Gain [dB] -4 -6 -8 -10 -12 -14 1M 10M 100M Frequency [Hz] 1G
- 27 -
CXA2726GA
Example of Representative Characteristics (Settling Characteristics)
Mode-3
A to D settling characteristics
0.35 0.30 0.25 Output voltage [V] 0.20 0.15 0.10 0.05 0.00 -0.05 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
E+I to H+L settling characteristics
0.40 0.35 0.30 Output voltage [V] 0.25 0.20 0.15 0.10 0.05 0.00 -0.05 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
WPP1 and WPP2 settling characteristics
0.50
0.40
Output voltage [V]
0.30
0.20
0.10
0.00
-0.10 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
- 28 -
CXA2726GA
Mode-4
A to D settling characteristics
0.8 0.7 0.6 Output voltage [V] 0.5 0.4 0.3 0.2 0.1 0.0 -0.1 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
E+I to H+L settling characteristics
0.90 0.80 0.70 Output voltage [V] 0.60 0.50 0.40 0.30 0.20 0.10 0.00 -0.10 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
WPP1 and WPP2 settling characteristics
1.20 1.00 0.80 0.60 0.40 0.20 0.00 -0.20 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
Output voltage [V]
- 29 -
CXA2726GA
Mode-5
A to D settling characteristics
0.30 0.25 0.20 0.15 0.10 0.05 0.00 -0.05 -5
Output voltage [V]
0
5
10
15
20 Time [ns]
25
30
35
40
45
E+I to H+L settling characteristics
0.30 0.25 0.20 Output voltage [V] 0.15 0.10 0.05 0.00 -0.05 -5
0
5
10
15
20 Time [ns]
25
30
35
40
45
WPP1 and WPP2 settling characteristics
0.35 0.30 0.25 Output voltage [V] 0.20 0.15 0.10 0.05 0.00 -0.05 -0.10 -5
0
5
10
15
20 Time [ns]
25
30
35
40
45
- 30 -
CXA2726GA
Mode-6
A to D settling characteristics
0.6 0.5 0.4 0.3 0.2 0.1 0.0 -0.1 -5
Output voltage [V]
0
5
10
15
20 Time [ns]
25
30
35
40
45
E+I to H+L settling characteristics
0.70 0.60 0.50 Output voltage [V] 0.40 0.30 0.20 0.10 0.00 -0.10 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
WPP1 and WPP2 settling characteristics
0.80 0.70 0.60 Output voltage [V] 0.50 0.40 0.30 0.20 0.10 0.00 -0.10 -0.20 -5 0 5 10 15 20 Time [ns] 25 30 35 40 45
- 31 -
CXA2726GA
Notes on Operation
1. Power supply
The CXA2726GA can be used with a single power supply or a dual power supply. However, this IC is not provided with a center voltage generating circuit, and so when used with a single power supply the center voltage must be supplied from the RF amplifier or other device. The power supply connections for each case are shown in the table below. VCC (Pin 2) Dual power supply Single power supply Positive power supply Positive power supply VC (Pin 10) GND Center voltage GND (Pin 1) Negative power supply GND
The potential difference between the VCC pin and the GND pin should be in the range of 4.5 to 5.5V for both a single power supply and a dual power supply.
2. Mechanical strength of package
The mechanical strength of the package is not guaranteed for the CXA2726GA. Do not employ a mounting method which applies a heavy load to the package.
3. Visual inspection standard
The visual inspection standards over the photodetector are as follows. (1) Foreign object limit A to L: Equivalent area 10m or less (2) Inspection method Using a metallurgical microscope (x50, coaxial illumination, bright field image), focus on the photodetector and measure the sharp shadow size. (3) Inspection range Entire photodetector area (entire area of A to L on page 21).
4. Bypass capacitors
Connect 0.1F capacitors "between the VCC and VC pins and between the VC and GND pins" or "between the VCC and GND pins and between the VC and GND pins" to lower the power supply line impedance. Use a flexible printed circuit (FPC) pattern or take other measures so that the bypass capacitors can be located near the PDIC.
5. Electrostatic strength
The CXA2726GA has a electrostatic strength of 300V*1, and should be used in an environment where countermeasures against electrostatic discharge have been implemented.
*1
Testing method: EIAJ ED-4701-1 C-111A Testing method A
6. Soldering
Reflow soldering: Finish reflow soldering under the recommended conditions described on the next page. Also, take care not to apply stress to the package during preheating and in the heated condition including immediately after soldering because the resin is softened in these cases.
- 32 -
CXA2726GA
Reflow Soldering Recommended Conditions 1
1. Perform infrared or hot air reflow, or use an oven that combines these methods. 2. Finish reflow soldering within the following range after unsealing the moisture-proof packing. 30C/70%RH/8h Reflow 30C/70%RH/8h Reflow Note) Perform reflow soldering a maximum of two times. When reflow soldering cannot be performed within these specifications, baking should first be performed under either of the following conditions. [Baking conditions] 125C, 10 to 48h Baking can be performed in the taped condition. Baking should be performed only one time. 3. Reflow conditions: Perform reflow soldering within the range shown in the figure below.
250 Peak: 250C max. 230C or more 2 to 6C/s 200 Temperature [C] Pre-heating zone 180C 150 150C 90 30 s 2 to 4C/s 100 30 10 s Soldering zone 50 Heating time (3 to 6C/s)
Be sure to consult your Sony representative when performing reflow soldering outside of the ranges described above.
- 33 -
CXA2726GA
Reflow Soldering Recommended Conditions 2
1. Perform infrared or hot air reflow, or use an oven that combines these methods. 2. Finish reflow soldering within the following range after unsealing the moisture-proof packing. 30C/80%RH/12h Reflow Note) Perform reflow soldering only one time. When reflow soldering cannot be performed within these specifications, baking should first be performed under either of the following conditions. [Baking conditions] 125C, 10 to 48h Baking can be performed in the taped condition. Baking should be performed only one time. 3. Reflow conditions: Perform reflow soldering within the range shown in the figure below.
250 Peak: 240C max. 230C or more 2 to 6C/s 200 Temperature [C] Pre-heating zone 180C 150 150C 90 30 s 2 to 4C/s 100 30 10 s Soldering zone 50 Heating time (3 to 6C/s)
Be sure to consult your Sony representative when performing reflow soldering outside of the ranges described above.
- 34 -
CXA2726GA
Pin 1 Indication Explanation Figure
Surface
LK IJ DC AB HG EF
Top View
Pin 1 indication Back (Resist window diagram)
Top View
- 35 -
CXA2726GA
Photodetector Position
(Unit: mm)
Surface Y
L I
K J X
DC AB HG EF Photodetector: center of package
0.38 0.2
Back
Top View
0.35 0.2
Resin uppermost Surface that senses surface the incident light
The resin thickness (mechanical dimension) over the photodetector is 0.35 0.2mm. The resin refractive index is as follows. 650nm: n = 1.55, 780nm: n = 1.54 The photodetector center position accuracy is as follows. X, Y: 0 0.16mm, angular : 0 2 (with the X axis as = 0)
- 36 -
CXA2726GA
Package Outline
(Unit: mm)
18PIN LFLGA
1.25 0.1 4.5 0.1 0.5
3.2 0.1
18
17 13
16 12 7 3
15 11 6
2
14 10 0.8 0.8
9 5
8 4
1
0.8
0.8
0.8
0.8
PIN 1 INDEX
18-0.45 0.03
0.8
PACKAGE MATERIAL SONY CODE JEITA CODE JEDEC CODE
LFLGA-18P-391
TERMINAL TREATMENT TERMINAL MATERIAL PACKAGE MASS
- 37 -
S
GLASS EPOXY NICKEL & GOLD PLATING COPPER 0.03g
0.1
S
Sony Corporation

▲Up To Search▲

Price & Availability of CXA2726GA

	To Download CXA2726GA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .