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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices MAC16 SERIES* TRIACS Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. * Blocking Voltage to 800 Volts * On-State Current Rating of 15 Amperes RMS at 80C * Uniform Gate Trigger Currents in Three Modes * High Immunity to dv/dt -- 500 V/s minimum at 125C * Minimizes Snubber Networks for Protection * Industry Standard TO-220AB Package * High Commutating di/dt -- 9.0 A/ms minimum at 125C TRIACS 15 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 MT2 G CASE 221A-06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol VDRM Parameter Peak Repetitive Off-State Voltage, (1) (- 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16D MAC16M MAC16N Value 400 600 800 15 150 93 20 0.5 - 40 to +125 - 40 to +150 A A A2sec Watts Watts C C Unit Volts IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg On-State RMS Current (60 Hz, TC = 80C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS RJC RJA TL Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 2.0 62.5 260 C/W C (1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3-67 MAC16 SERIES ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS IDRM Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) mA TJ = 25C TJ = 125C -- -- -- -- 0.01 2.0 ON CHARACTERISTICS VTM IGT Peak On-State Voltage* (ITM = 21 A Peak) Continuous Gate Trigger Current (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Hold Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) Latch Current (VD = 24 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Volts -- 10 10 10 -- -- -- -- 0.5 0.5 0.5 1.2 16 18 22 20 33 36 33 0.75 0.72 0.82 1.6 mA 50 50 50 mA 50 mA 50 80 50 Volts 1.5 1.5 1.5 IH IL VGT DYNAMIC CHARACTERISTICS (di/dt)c Rate of Change of Commutating Current* See Figure 10. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/s, Gate Open, TJ = 125C, f = 250 Hz, No Snubber) 9.0 CL = 10 F LL = 40 mH 500 -- -- V/s -- -- A/ms dv/dt Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 125 PAV, AVERAGE POWER (WATTS) 120 TC, CASE TEMPERATURE (C) 115 110 105 100 95 90 85 80 0 2 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 4 14 16 = 180 = 30 and 60 = 90 = 120 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (AMP) 14 16 = 30 DC 180 120 90 60 DC Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 3-68 Motorola Thyristor Device Data MAC16 SERIES 100 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 TYPICAL AT TJ = 25C MAXIMUM @ TJ = 125C 0.1 I T, INSTANTANEOUS ON-STATE CURRENT (AMP) 10 0.01 0.1 1 10 100 t, TIME (ms) 1000 1 * 104 Figure 4. Thermal Response MAXIMUM @ TJ = 25C 1 I H, HOLD CURRENT (mA) 40 MT2 POSITIVE MT2 NEGATIVE 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 4 5 - 40 - 10 20 50 80 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 3. On-State Characteristics Figure 5. Hold Current Variation 100 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 1 OFF-STATE VOLTAGE = 12 V RL = 140 Q2 Q3 Q1 Q1 Q3 Q2 OFF-STATE VOLTAGE = 12 V RL = 140 1 - 40 - 10 20 50 80 TJ, JUNCTION TEMPERATURE (C) 110 125 0.5 - 40 - 10 +20 50 80 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation 3-69 Motorola Thyristor Device Data MAC16 SERIES dv/dt , CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) 5000 (dv/dt) c , CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ s) VD = 800 Vpk TJ = 125C 100 4K 3K TJ = 125C 10 ITM tw VDRM f= 100C 75C 2K 1 2 tw 1K 6f I (di/dt)c = TM 1000 0 10 100 1000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) 10000 1 10 20 30 40 50 60 70 80 90 100 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 8. Critical Rate of Rise of Off-State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I 1N4007 - + 2 1N914 51 G 1 CHARGE 400 V NON-POLAR CL Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 3-70 Motorola Thyristor Device Data |
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