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| SS3H9 and SS3H10 New Product Vishay Semiconductors formerly General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifiers Cathode Band Reverse Voltage 90 to 100V Forward Current 3.0A DO-214AB (SMC) 0.126 (3.20) 0.114 (2.90) 0.245 (6.22) 0.220 (5.59) Mounting Pad Layout 0.185 MAX. (4.69 MAX.) 0.126 MIN. (3.20 MIN.) Dimensions in inches and (millimeters) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.320 REF 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.008 (0.203) Max. Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low profile surface mount package * Built-in strain relief * Low power loss, high efficiency * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications * Guardring for overvoltage protection * High temperature soldering guaranteed: 250C/10 seconds at terminals Mechanical Data Case: JEDEC DO-214AB molded plastic body Terminals: Solder plated, solderable per MIL-STD750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007 oz., 0.25 g Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Device marking code Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current at: TL = 115C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current at tp = 2.0s, 1KHZ Critical rate of rise of reverse voltage Typical thermal resistance - junction to lead TL = 25C - junction to ambient(2) Operating junction and storage temperature range VRRM VRWM VDC IF(AV) IFSM IRRM dv/dt RJL RJA TJ, TSTG Symbol SS3H9 MS9 90 90 90 3.0 100 1.0 10,000 9.7 32 -65 to +175 SS3H10 MS10 100 100 100 V V V A Unit A A V/s C/W C Electrical Characteristics Maximum instantaneous forward voltage at:(1) Maximum DC reverse current at rated DC blocking voltage (TA = 25C unless otherwise noted) IF = 3.0A, TJ = 25C IF = 3.0A, TJ = 125C TJ = 25C TJ = 125C VF IR 0.8 0.65 20 4 V A mA Notes: (1) Pulse test: 300s pulse width, 1% duty cycle (2) PCB mounted Document Number 88752 18-Aug-04 www.vishay.com 1 SS3H9 and SS3H10 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve 100 Fig. 2 -- Maximum Non-repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms single half sine-wave (JEDEC Method) 4.0 3.5 Average Forward Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 80 60 40 20 10 25 50 75 100 125 150 175 200 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 3 - Typical Instantaneous Forward Characteristics 100 1000 Fig. 4 - Typical Reverse Characteristics Instantaneous Reverse Current (A) 100 10 1 0.1 0.01 0.001 20 TJ = 25C TJ = 150C TJ = 125C TJ = 100C Instantaneous Forward Current (A) 10 TJ = 175C TJ = 150C TJ = 125C 1 TJ = 100C TJ = 25C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage, (%) Fig. 5 - Typical Junction Capacitance 1000 100 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (C/W) Junction Capacitance (pF) 10 100 1 10 0.1 1 10 100 0.1 0.01 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 t -- Pulse Duration (sec) Document Number 88752 18-Aug-04 |
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