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| TLP599B TOSHIBA Photocoupler Photo Relay TLP599B Telecommunication Data Acquisition Measurement Instrumentation Unit in mm The TOSHIBA TLP599B consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP (DIP6). The TLP599B is a bi-directional switch which can replace mechanical relays in many applications. * * * * * * * Peak off-state voltage: 100V (min.) On-state current: 200mA (max.) (A connection) On-state resistance: 4 (max.) (A connection) Insulation thickness: 0.4mm(max.) Isolation voltage: 2500Vrms (min.) UL recognized: UL1577, file no. E67349 Trigger LED current (Ta = 25C) TOSHIBA Weight: 0.4g 11-7A8 Classification (Note 1) (IFT2) Standard Trigger LED Current (mA) @ION = 200mA Min. Max. 3/4 3/4 2 5 Marking Of Classification T2 T2, blank Pin Configuration (top view) 1 2 3 6 5 4 1. : Anode 2. : Cathode 3. : NC 4. : Drain D1 5. : Source 6. : Drain D2 (Note 1): Application type name for certification test, please use standard product type name, i.e. TLP599B (IFT2) : TLP599B Schematic 1 2 6 5 4 1 2002-09-25 TLP599B Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 25C) LED Peak forward current (100 s pulse, 100 pps) Reverse voltage Junction temperature Off-state output terminal voltage A connection On-state RMS current Detector B connection C connection A connection On-state current derating(Ta 25C) B connection C connection Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10 s) Isolation voltage (AC, 1 min., R.H. 60%) (Note 2) Tj Tstg Topr Tsol BVS ION / C ION Symbol IF IF / C IFP VR Tj VOFF Rating 50 -0.5 1 5 125 100 200 300 400 -2 -3 -4 125 -55~125 -40~85 260 2500 C C C C Vrms mA / C mA Unit mA mA / C A V C V (Note 2): Device considered a two-terminal device : Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current On-state current Operating temperature Symbol VDD IF ION Topr Min. 3/4 7.5 3/4 -20 Typ. 3/4 15 3/4 3/4 Max. 80 25 200 80 Unit V mA mA C Circuit Connections 1 2 3 6 5 4 LOAD AC or DC 1 2 3 6 5 4 LOAD DC 1 2 3 6 5 4 LOAD DC A connection B connection C connection 2 2002-09-25 TLP599B Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Detector Off-state current Capacitance Symbol VF IR CT IOFF COFF Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz VOFF = 100 V V = 0, f = 1 MHz Min. 1.0 3/4 3/4 3/4 3/4 Typ. 1.15 3/4 30 3/4 3/4 Max. 1.3 10 3/4 1 3/4 Unit V A pF A pF Coupled Electrical Characteristics (Ta = 25C) Characteristic Trigger LED current A connection On-state resistance B connection C connection RON Symbol IFT Test Condition ION = 200 mA ION = 200 mA, IF = 10 mA ION = 300 mA, IF = 10 mA ION = 400 mA, IF = 10 mA Min. 3/4 3/4 3/4 3/4 Typ. 1 3.0 1.5 0.75 Max. 5 4 2 1 Unit mA Isolation Characteristics (Ta = 25C) Characteristic Capacitance input to output Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second (in oil) DC, 1 minute (in oil) Min. 3/4 5 10 10 Typ. 0.8 10 14 Max. 3/4 3/4 3/4 3/4 3/4 Unit pF Vrms Vdc 2500 3/4 3/4 3/4 5000 5000 Switching Characteristics (Ta = 25C) Characteristic Turn-on time Turn-off time Symbol ton toff Test Condition VDD = 20 V, RL = 200 IF = 10 mA Min. 3/4 3/4 Typ. 3/4 3/4 Max. 2 2 Unit ms Switching Time Test Circuit IF 1 2 4 6 RL VDD IF VOUT VOUT ton 90% 10% toff 3 2002-09-25 TLP599B I F - Ta 100 300 ION (RMS) - Ta (mA) 80 250 C connection Allowable forward current IF (mA) On-state current ION(RMS) 200 60 150 B connection A connection 40 100 20 50 0 20 0 20 40 60 80 100 120 0 20 0 20 40 60 80 100 Amebient temperature Ta (C) Amebient temperature Ta (C) IFP - DR 5000 3000 Pulse width 100 s Ta = 25C 50 30 1000 500 300 100 Ta = 25C IF - VF Allowable pulse forward current IFP (mA) (mA) 10 Forward current IF 103 3 102 3 101 3 100 5 3 100 50 30 1 0.5 0.3 0.1 0.6 10 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) VF / Ta - IF 1000 IFP - VFP IFP (mA) Pulse forward current 500 300 2.8 Forward voltage temperature coefficient VF / Ta (mV / C) 2.4 100 50 30 2.0 1.6 1.2 10 Pulse width 10 s 5 3 Repetitive frequency = 100 Hz Ta = 25C 0.8 0.4 0.1 0.3 0.5 1 3 5 10 30 50 1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 4 2002-09-25 TLP599B RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-09-25 |
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