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| FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench(R) MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features * Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 V RDS(ON) = 150 m @ VGS = 4.5 V * Q2 -2.0 A, 30V. RDS(ON) = 150 m @ VGS = -10 V RDS(ON) = 220 m @ VGS = -4.5 V * Low gate charge * High performance trench technology for extremely low RDS(ON). * SuperSOT -6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). Applications * DC/DC converter * Load switch * LCD display inverter D2 S1 D1 Q2(P) 4 G2 3 2 1 Q1(N) 5 6 SuperSOT Pin 1 TM -6 S2 G1 SuperSOTTM-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Q1 30 16 (Note 1a) Q2 -30 25 -2.0 -8 0.96 0.9 0.7 -55 to +150 Units V V A 2.5 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 C/W C/W Package Marking and Ordering Information Device Marking .333 Device FDC6333C Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2001 Fairchild Semiconductor Corporation FDC6333C Rev C (W) FDC6333C Electrical Characteristics Symbol Parameter Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A,Ref. to 25C ID = -250 A,Ref. to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = 25 V, VDS = 0 V VGS = -16 V, VDS = 0 V VGS = -25 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A,Ref. To 25C ID = -250 A,Ref. to 25C VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A VGS = 10 V, ID = 2.5 A,TJ=125C VGS = -10 V, ID = -2.0 A VGS =- 4.5 V, ID = -1.7 A VGS = 10 V, ID= -2.0 A,TJ=125C VGS = 10 V, VDS = 5 V VDS = -5 V VDS = 5 V ID = 2.5 A ID = -2.0A Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min 30 -30 Typ Max Units V 27 -22 1 -1 100 100 -100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 1 -1 1.8 -1.8 4 -4 73 90 106 95 142 149 3 -3 V mV/C 95 150 148 130 220 216 m Q2 ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 8 -8 7 3 A S VGS = -10 V, VDS = -5 V Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 VDS=15 V, V GS= 0 V, f=1.0MHz VDS=-15 V, V GS= 0 V, f=1.0MHz VDS=15 V, V GS= 0 V, f=1.0MHz VDS=-15 V, V GS= 0 V, f=1.0MHz VDS=15 V, V GS= 0 V, f=1.0MHz VDS=-15 V, V GS= 0 V, f=1.0MHz 282 185 49 56 20 26 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 For Q1: VDS =15 V, VGS= 10 V, For Q2: VDS =-15 V, VGS= -10 V, 4.5 I DS= 1 A RGEN = 6 I DS= -1 A RGEN = 6 4.5 6 13 19 11 1.5 2 9 9 12 23 34 20 3 4 6.6 5.7 ns ns ns ns nC nC nC For Q1: VDS =15 V, VGS= 10 V, For Q2: VDS =-15 V, VGS= -10 V, I DS= 2.5 A RGEN = 6 I DS= -2.0 A 4.7 4.1 0.9 0.8 0.6 0.4 FDC6333C Rev C (W) FDC6333C Electrical Characteristics Symbol IS VSD TA = 25C unless otherwise noted Parameter Test Conditions Q1 Q2 (Note 2) (Note 2) Min Typ Max Units 0.8 -0.8 A V Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Q1 Q2 VGS = 0 V, IS = 0.8 A VGS = 0 V, IS = 0.8 A 0.8 0.8 1.2 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 130 C/W when mounted on a 0.125 2 in pad of 2 oz. copper. b) 140/W when mounted 2 on a .004 in pad of 2 oz copper c) 180/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC6333C Rev C (W) FDC6333C Typical Characteristics: N-Channel 10 VGS = 10V 6.0V 8 I D, DRAIN CURRENT (A) 4.5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = 3.0V 1.8 1.6 3.5V 1.4 4.0V 1.2 4.5V 6.0V 10V 1 6 3.0V 4 2 0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 RDS(ON) , ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 2.5A VGS = 10V ID = 1.25A 0.2 1.4 1.2 0.15 1 TA = 125 oC 0.1 TA = 25oC 0.05 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 10 VDS =5V I D, DRAIN CURRENT (A) 8 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V I S, REVERSE DRAIN CURRENT (A) 10 TA = 125oC 1 25 oC 0.1 -55o C 0.01 TA =-55 C 25o C 125o C 6 4 2 0.001 0 1.5 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) 0.0001 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6333C Rev C (W) FDC6333C Typical Characteristics: N-Channel (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 2.5A 8 VDS = 5V 10V 400 f = 1MHz VGS = 0 V CAPACITANCE (pF) 15V 6 300 C ISS 200 4 2 100 COSS CRSS 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 5 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10s 100s 1ms 10ms 100ms 1s DC 4 SINGLE PULSE RJA = 180C/W TA = 25C 3 1 VGS = 10V SINGLE PULSE R JA = 180oC/W TA = 25oC 0.01 0.1 2 0.1 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDC6333C Rev C (W) FDC6333C Typical Characteristics: P-Channel 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) 8 -6.0V -4.5V 3 VGS = -3.5V 2.5 6 -4.0V 2 -4.0V -4.5V -5.0V -6.0V -10V 4 -3.5V 1.5 2 1 0 0 1 2 3 4 5 -VDS, DRAIN-SOURCE VOLTAGE (V) 0.5 0 2 4 6 8 10 -ID, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 1.6 R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) I D = -2A VGS =-10V 1.4 ID = -1A 0.3 TA = 125 oC 0.2 1.2 1 TA = 25o C 0.1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (oC) 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 13. On-Resistance Variation withTemperature. 5 TA = -55 C 125oC 3 o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 -I S, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 4 25oC VGS = 0V 1 TA = 125oC 0.1 25o C 2 0.01 -55oC 1 0.001 0 1.5 2.5 3.5 4.5 -V GS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6333C Rev C (W) FDC6333C Typical Characteristics: P-Channel (continued) 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -2.0A 8 CAPACITANCE (pF) -15V 6 VDS = -5V -10V 300 250 CISS 200 150 COSS 100 50 CRSS 0 0 1 2 3 4 5 0 5 10 15 20 25 f = 1MHz VGS = 0 V 4 2 0 Qg , GATE CHARGE (nC) 30 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 Figure 18. Capacitance Characteristics. 5 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10s 100s 1ms 10ms 100ms 1s DC 4 SINGLE PULSE RJA = 180C/W TA = 25C 3 1 VGS = 10V SINGLE PULSE R JA = 180oC/W TA = 25oC 0.01 0.1 2 0.1 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 180C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDC6333C Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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