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| S T S 8205 S amHop Microelectronics C orp. J un,08 2005 ver 1.4 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 4A R DS (ON) S uper high dense cell design for low R DS (ON). 30 @ V G S = 4.0V 46 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D1 D2 TS OP 6 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C -P ulsed b S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 10 4 25 2 1.25 -55 to 150 Unit V V A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 100 C /W 1 S T S 8205 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4.0V, ID = 4A VGS =2.5V, ID = 3A VDS = 5V, ID =4A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 0.8 27 35 13 800 155 125 1.5 30 46 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.0V, R L = 10 ohm R GE N = 10 ohm VDS =10V, ID = 4A, VGS =4.0V 18.3 4.8 43.5 20 11 2.2 2.5 ns ns ns ns nC nC nC 2 S T S 8205 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =2A Min Typ Max Unit 0.8 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 V G S =10,9,8,7,6,5,4,3V 25 25 C V G S =2V 20 16 ID, Drain C urrent(A) ID, Drain C urrent (A) -55 C 15 T j=125 C 10 12 8 4 0 5 0 0.0 0 2 4 6 8 10 12 0.3 0.6 0.9 1.2 1.5 1.8 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 1500 1.8 F igure 2. Trans fer C haracteris tics V G S =4V ID=4A C , C apacitance (pF ) R DS (ON), On-R es is tance (Normalized ) 12 1200 900 600 300 C rs s 0 0 2 4 6 8 C os s 10 1.4 1.0 0.6 0.2 0 C is s -50 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T S 8205 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=250uA 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 30 F igure 6. B reakdown V oltage V ariation with T emperature 20 10 gFS , T rans conductance (S ) 20 15 10 5 0 0 5 10 15 V DS =5V 20 25 Is , S ource-drain current (A) 25 1 0 0.4 0.6 0.8 1.0 T J =25 C 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 VDS =10V ID=4A 10 RD ON S( )L im it 10 10 0m s ms 11 1s DC 0.1 0.03 VGS =4V S ingle P ulse T c=25 C 0.1 1 10 20 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 8205 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.05 0.1 t2 0.01 0.00001 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 8205 6 S T S 8205 TSOP6 Tape and Reel Data TSOP6 Carrier Tape TSOP6 Reel 7 |
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