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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D-Pak (TO-263), and TO-262 and TO220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. EcoSPARKTM devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Formerly Developmental Type 49362
Applications
* Automotive Ignition Coil Driver Circuits * Coil- On Plug Applications
Features
* Space saving D-Pak package availability * SCIS Energy = 300mJ at TJ = 25oC * Logic Level Gate Drive
Package
JEDEC TO-263AB D-Pak JEDEC TO-220AB E C G
Symbol
COLLECTOR
G E
R1 GATE
JEDEC TO-252AA D-Pak
JEDEC TO-262AA E
C G
R2
G E COLLECTOR (FLANGE)
EMITTER
Device Maximum Ratings TA = 25C unless otherwise noted
Symbol BVCER BVECS ESCIS25 ESCIS150 IC25 IC110 VGEM PD TJ TSTG TL Tpkg ESD Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) At Starting TJ = 25C, ISCIS = 14.2A, L = 3.0 mHy At Starting TJ = 150C, ISCIS = 10.6A, L = 3.0 mHy Collector Current Continuous, At TC = 25C, See Fig 9 Collector Current Continuous, At TC = 110C, See Fig 9 Gate to Emitter Voltage Continuous Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) Max Lead Temp for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at 100pF, 1500 Ratings 430 24 300 170 21 17 10 150 1.0 -40 to 175 -40 to 175 300 260 4 Units V V mJ mJ A A V W W/C C C C C kV
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Package Marking and Ordering Information
Device Marking V3040D V3040S V3040P V3040S Device ISL9V3040D3S ISL9V3040S3S ISL9V3040P3 ISL9V3040S3 Package TO-252AA TO-263AB TO-220AA TO-262AA Tape Width 16mm 24mm Quantity 2500 800 -
Electrical Characteristics TA = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1K, See Fig. 15 TJ = -40 to 150C IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150C IC = -75mA, VGE = 0V, TC = 25C IGES = 2mA VCER = 250V, TC = 25C RG = 1K, See T = 150C C Fig. 11 VEC = 24V, See TC = 25C Fig. 11 TC = 150C 370 400 430 V
BVCES
Collector to Emitter Breakdown Voltage
390
420
450
V
BVECS BVGES ICER
Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current
30 12 10K
14 70 -
25 1 1 40 26K
V V A mA mA mA
IECS R1 R2
Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance
On State Characteristics
VCE(SAT) VCE(SAT) VCE(SAT) Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V IC = 10A, VGE = 4.5V IC = 15A, VGE = 4.5V TC = 25C, See Fig. 3 TC = 150C, See Fig. 4 TC = 150C 1.25 1.58 1.90 1.60 1.80 2.20 V V V
Dynamic Characteristics
QG(ON) VGE(TH) Gate Charge Gate to Emitter Threshold Voltage IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 IC = 1.0mA, VCE = VGE, See Fig. 10 IC = 10A, VCE = 12V TC = 25C TC = 150C 1.3 0.75 17 3.0 2.2 1.8 nC V V V
VGEP
Gate to Emitter Plateau Voltage
Switching Characteristics
td(ON)R trR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 VCE = 300V, L = 500Hy, VGE = 5V, RG = 1K TJ = 25C, See Fig. 12 TJ = 25C, L = 3.0 mHy, RG = 1K, VGE = 5V, See Fig. 1 & 2 0.7 2.1 4.8 2.8 4 7 15 15 300 s s s s mJ
Thermal Characteristics
RJC Thermal Resistance Junction-Case TO-252,TO-263,TO-220,TO262 1.0 C/W
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
ISCIS, INDUCTIVE SWITCHING CURRENT (A) RG = 1k, VGE = 5V,Vdd = 14V 25 ISCIS, INDUCTIVE SWITCHING CURRENT (A) 30 30 RG = 1k, VGE = 5V,Vdd = 14V 25
20
20
15 TJ = 25C TJ = 150C 10
15 TJ = 25C 10 TJ = 150C 5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 2 4 6 8 10
5 SCIS Curves valid for Vclamp Voltages of <430V 0 0 25 50 75 100 125 150 175 200
tCLP, TIME IN CLAMP (S)
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Current vs Time in Clamp
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.30 ICE = 6A VGE = 3.7V VGE = 4.0V 1.26
Figure 2. Self Clamped Inductive Switching Current vs Inductance
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1.8 ICE = 10A 1.7 VGE = 3.7V 1.6 VGE = 4.0V
1.22 VGE = 4.5V 1.18 VGE = 8.0V VGE = 5.0V
1.5
1.4
VGE = 4.5V VGE = 5.0V VGE = 8.0V
1.3
1.14 -75
1.2
-75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C)
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V 15 VGE = 3.7V
Figure 4. Collector to Emitter On-State Voltage vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V 15 VGE = 3.7V
10
10
5 TJ = - 40C 0 0 1.0 2.0 3.0 4.0
5 TJ = 25C 0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs Collector Current
Figure 6. Collector to Emitter On-State Voltage vs Collector Current
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 25 VGE = 8.0V VGE = 5.0V 20 VGE = 4.5V VGE = 4.0V 15 VGE = 3.7V 25 DUTY CYCLE < 0.5%, VCE = 5V PULSE DURATION = 250s 20
15 TJ = 150C 10 TJ = 25C 5 TJ = -40C 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
10
5 TJ = 175C 0 0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs Collector Current
25 VGE = 4.0V ICE, DC COLLECTOR CURRENT (A) VTH, THRESHOLD VOLTAGE (V) 20 2.0 2.2
Figure 8. Transfer Characteristics
VCE = VGE ICE = 1mA
1.8
15
1.6
10
1.4
5
1.2
0 25 50 75 100 125 150 175
1.0 -50 -25 0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (C)
TJ JUNCTION TEMPERATURE (C)
Figure 9. DC Collector Current vs Case Temperature
10000 VECS = 24V 1000 SWITCHING TIME (S)
Figure 10. Threshold Voltage vs Junction Temperature
12 ICE = 6.5A, VGE = 5V, RG = 1K Resistive tOFF
LEAKAGE CURRENT (A)
10 Inductive tOFF 8
100
10 VCES = 300V 1 VCES = 250V 0.1 -50 -25 0 25 50 75 100 125 150 175
6
4 Resistive tON 2 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Leakage Current vs Junction Temperature
Figure 12. Switching Time vs Junction Temperature
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)
1600 FREQUENCY = 1 MHz VGE, GATE TO EMITTER VOLTAGE (V) 7 6 5 VCE = 12V 4 3 2 1 0 0 5 10 15 20 25 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 IG(REF) = 1mA, RL = 1.25, TJ = 25C
C, CAPACITANCE (pF)
1200 CIES
800
CRES 400 COES 0
VCE = 6V
QG, GATE CHARGE (nC)
Figure 13. Capacitance vs Collector to Emitter Voltage
430 ICER = 10mA BVCER, BREAKDOWN VOLTAGE (V) 425 420
Figure 14. Gate Charge
TJ = - 40C 415 410 405 400 395 390 10 100 RG, SERIES GATE RESISTANCE (k) 1000 2000 3000 TJ = 175C TJ = 25C
Figure 15. Breakdown Voltage vs Series Gate Resistance
ZthJC, NORMALIZED THERMAL RESPONSE
100
0.5 0.2 0.1
10-1
0.05 0.02 0.01
t1 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
10-5 10-4 10-3 10-2 10-1
10
-2
SINGLE PULSE 10-3 10-6
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Test Circuit and Waveforms
L VCE R or L C RG = 1K 5V E G DUT + VCE LOAD
C PULSE GEN RG G
DUT E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VCE tP L VARY tP TO OBTAIN REQUIRED PEAK IAS VGE RG
BVCES
VCE IAS VDD
+
C G
VDD -
DUT E
tP 0V
IAS 0.01
0 tAV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
SPICE Thermal Model
REV 7 March 2002
th JUNCTION
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 CTHERM1 th 6 2.1e -3 CTHERM2 6 5 1.4e -1 CTHERM3 5 4 7.3e -3 CTHERM4 4 3 2.1e -1 CTHERM5 3 2 1.1e -1 CTHERM6 2 tl 6.2e +6 RTHERM1 th 6 1.2e -1 RTHERM2 6 5 1.9e -1 RTHERM3 5 4 2.2e -1 RTHERM4 4 3 6.0e -2 RTHERM5 3 2 5.8e -2 RTHERM6 2 tl 1.6e -3
RTHERM1
CTHERM1
6
RTHERM2
CTHERM2
SABER Thermal Model
SABER thermal model ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.1e -3 ctherm.ctherm2 6 5 = 1.4e -1 ctherm.ctherm3 5 4 = 7.3e -3 ctherm.ctherm4 4 3 = 2.2e -1 ctherm.ctherm5 3 2 =1.1e -1 ctherm.ctherm6 2 tl = 6.2e +6 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -3 }
RTHERM3
5
CTHERM3
4
RTHERM4
CTHERM4
3
RTHERM5
CTHERM5
2
RTHERM6
CTHERM6
tl
CASE
(c)2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop
DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

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