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| NTE456 N-Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N-Channel junction silicon field-effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain-Gate Voltge, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current V(BR)GSS VDS = 0, IG = -10A IGSS VGS(off) VGS IDSS rDS(on) VGS= -15V, VDS = 0 VGS= -15V, VDS = 0, TA = +150C Gate-Source Cutoff Voltage Gate-Source Voltage ON Characteristics Zero-Gate-Voltage Drain Current Static Drain-Source On Resistance VDS = 15V, VGS = 0 VDS = 0, VGS = 0 2.0 - - 400 6.0 - mA VDS = 15V, ID = 0.1nA VDS = 15V, ID = 200A -30 - - - -1.0 - - - - - - -0.1 -100 -6 -5.0 V nA nA V V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Small-Signal Characteristics Forward Transfer Admittance Common Source Output Admittance Common Source Input Capacitance Reverse Transfer Capacitance Common-Source Output Capacitance Functional Characteristics Noise Figure NF VDS = 15V, VGS = 0, RS = 1M, f = 100Hz - - 2.5 dB |yfs| |yos| Ciss Crss Cosp VDS = 15V, VGS = 0, f = 1kHz, Note 1 VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 1kHz VDS = 15V, VGS = 0, f = 30MHz 2000 - - - - - - 4.5 1.2 1.5 5000 20 6.0 2.0 - mhos mhos pF pF pF Symbol Test Conditions Min Typ Max Unit Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Source Drain Gate 45 Case .040 (1.02) |
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