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MITSUBISHI INTELLIGENT POWER MODULES
PM100CVA120
FLAT-BASE TYPE INSULATED PACKAGE
TERMINAL CODE 1. WFO 11. UP 2. VWPC 12. VUP1 3. WP 13. NC 14. FO 4. VWP1 5. VFO 15. VNC 16. VN1 6. VVPC 17. UN 7. VP 18. VN 8. VVP1 19. WN 9. UFO 10. VUPC
P
N
A D
P
M
1234
P R U
Q BKE
5678 9 10 1112
UV
13 14 15 16
L - TYP.
U V W
17 18 19
M T (4 TYP.) S NUTS (5 TYP.) W SEE DETAIL A H
N CC (4 PLACES) AA - TYP. Z - TYP. BB SQ PIN - TYP. (19 PLACES) DETAIL A
J TYP. X
C
Y
G
F
Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic - Short Circuit - Over Temperature - Under Voltage
VWP1 WFO WP VWPC
VUP1 UFO UP VUPC
VVP1 VFO VP VVPC
WN VNC
VN1
UN
NC
VN
RfO
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N P Inches 4.72 4.02 0.95+0.04/-0.02 4.130.010 3.430.010 0.16 0.95 0.42 0.87 3.510.02 0.47 0.48 0.77 0.30 Millimeters 120.0 102.0 24.1+1.0/-0.5 105.00.25 87.00.25 4.0 24.1 10.6 22.0 89.20.5 12.0 12.3 19.5 7.5 Dimensions Q R S T U V W X Y Z AA BB CC Inches 0.59 0.72 M5 Metric 0.22 Dia. 0.560.010 1.720.012 0.570.012 3.35 0.85 0.100.010 1.370.010 0.02 SQ 0.12+0.04/-0.02 Millimeters 15.1 18.25 M5 Dia. 5.5 14.10.25 43.570.3 14.60.3 85.2 21.6 2.540.25 3.490.25 0.64 SQ 3.0+1.0/-0.5
FO
GND FO IN VCC TEMP GND OUT Si TH
GND FO IN VCC GND Si OUT
GND FO IN VCC GND Si OUT
GND FO IN VCC GND Si OUT
GND FO IN VCC GND Si OUT
GND FO IN VCC GND Si OUT
RfO = 1.5k OHM
N
W
V
U
P
Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM75CVA120 is a 1200V, 75 Ampere Intelligent Power Module.
Type PM Current Rating Amperes 100 VCES Volts (x 10) 120
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100CVA120
FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25C unless otherwise specified
Ratings Power Device Junction Temperature Storage Temperature Case Operating Temperature Mounting Torque, M5 Mounting Screws Mounting Torque, M5 Main Terminal Screws Module Weight (Typical) Supply Voltage (Applied between P - N) Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125C Start) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg TC -- -- -- VCC(surge) VCC(prot.) Viso PM100CVA120 -20 to 150 -40 to 125 -20 to 100 2.5 ~ 3.5 2.5 ~ 3.5 730 1000 800 2500 Units C C C N*m N*m Grams Volts Volts Vrms
Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN-VNC) Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) VD VCIN VFO IFO 20 20 20 20 Volts Volts Volts mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25C) Peak Collector Current, (TC = 25C) Collector Dissipation (TC = 25C) VCES IC ICP PC 1200 100 200 595 Volts Amperes Amperes Watts
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100CVA120
FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection (VD = 15V, Lower Arm) Supply Circuit Under Voltage Protection (-20C Tj 125C) Circuit Current SC toff(SC) OT OTr UV UVr ID Vth(on) Vth(off) IFO(H) IFO(L) Minimum Fault Output Pulse Width tFO -20C Tj 125C, VD = 15V VD = 15V Trip Level Reset Level Trip Level Reset Level VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC Input ON Threshold Voltage Input OFF Threshold Voltage Fault Output Current Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN-VNC VD = 15V, VFO = 15V* VD = 15V, VFO = 15V* VD = 15V* 145 -- 100 85 11.5 -- -- -- 1.2 1.7 -- -- 1.0 -- 10 110 95 12.0 12.5 40 13 1.5 2.0 -- 10 1.8 -- -- 120 105 12.5 -- 55 18 1.8 2.3 0.01 15 -- Amperes s C C Volts Volts mA mA Volts Volts mA mA ms
* Fault output is given only when the internal SC, OT, and UV protections circuits of either an upper-arm or a lower-arm device operate to protect it.
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100CVA120
FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector-Emitter Cutoff Current ICES VEC VCE(sat) VCE = VCES, VD = 15V, Tj = 25C VCE = VCES, VD = 15V, Tj = 125C FWDi Forward Voltage Collector-Emitter Saturation Voltage -IC = 100A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V, IC = 100A, Pulsed, Tj = 25C VD = 15V, VCIN = 0V, IC = 100A, Pulsed, Tj = 125C Inductive Load Switching Times ton trr tC(on) toff tC(off) VD = 15V, VCIN = 0V 15V VCC = 600V, IC = 100A, Tj = 125C 0.4 -- -- -- -- 0.9 0.2 0.4 2.4 0.7 2.3 0.3 1.0 3.4 1.2 s s s s s -- 2.75 3.35 Volts -- -- -- -- -- -- 2.50 2.65 1.0 10.0 3.50 3.30 mA mA Volts Volts
Thermal Characteristics
Characteristic Junction to Case Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Contact Thermal Resistance Rth(c-f) Condition Each Inverter IGBT Each Inverter FWDi Case to Fin Per Module, Thermal Grease Applied Min. -- -- -- Typ. -- -- -- Max. 0.21 0.35 0.025 Units C/Watt C/Watt C/Watt
Recommended Conditions for Use
Characteristic Supply Voltage Symbol VCC VCE(surge) VD Input ON Voltage Input OFF Voltage Arm Shoot-Through Blocking Time VCIN(on) tdead Condition Applied across P-N Terminals Applied across P-N Terminals Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC *, VN1-VNC Applied between 0.8 4.0 3.0 Volts Volts s VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, UN * VN * WN-VNC For IPM's each Input Signal Value 800 1000 15 1.5 Units Volts Volts Volts
* With ripple satisfying the following conditions, dv/dt swing 5V/s, Variation 2V peak to peak.
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100CVA120
FLAT-BASE TYPE INSULATED PACKAGE
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE(SAT), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(SAT), (VOLTS)
COLLECTOR-EMITTER SATURATON VOLTAGE CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS (TYPICAL)
3.0
3.0
COLLECTOR CURRENT, IC, (AMPERES)
150
Tj = 25oC VCIN = 0V
15 VD = 17V 13
2.0
2.0
100
1.0
VD = 15V VCIN = 0V Tj = 25C Tj = 125C
1.0
IC = 100A VCIN = 0V Tj = 25C Tj = 125C
50
0 0 50 100 150
COLLECTOR CURRENT, IC, (AMPERES)
0 0 13 15 17
CONTROL SUPPLY VOLTAGE, VD, (VOLTS)
0 0 10 20 30
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
SWITCHING ENERGY, PSW(on), PSW(off), (mJ/PULSE)
SWITCHING LOSS CHARACTERISTICS (TYPICAL)
101
SWITCHING TIMES, tc(on), tc(off), (s)
101
VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C
103
SWITCHING TIMES, ton, toff, (s)
102
VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C
PSW(off) PSW(on) PSW(on) PSW(off)
100
toff ton VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C
100
tc(off) tc(on)
101
10-1 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
10-1 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
100 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
DIODE FORWARD CHARACTERISTICS
CIRCUIT CURRENT VS. CARRIER FREQUENCY
101
REVERSE RECOVERY TIME, trr, (s)
103
102
EMITTER CURRENT, IE, (AMPERES)
150
VD = 15V Tj = 25C
CIRCUIT CURRENT, ID, (mA)
100
Irr
102
100
N-SIDE
101
10-1
trr
10-2 101
VCC = 600V VD = 15V Inductive Load Tj = 25C Tj = 125C
101
50
P-SIDE
VD = 15V VCIN = 15V Tj = 25C Tj = 125C
102
COLLECTOR CURRENT, IC, (AMPERES)
100 103
100 0 1.0 2.0
0 3.0 0 10 20 30
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) CARRIER FREQUENCY, fC, (kHz)
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM100CVA120
FLAT-BASE TYPE INSULATED PACKAGE
SHORT CIRCUIT CURRENT TRIP LEVEL, (VD = 15V) = 1.0
OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL)
1.2
Tj = 25C
SHORT CIRCUIT CURRENT TRIP LEVEL, (Tj = 25C) = 1.0
OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL)
FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL)
1.2
1.2
FAULT OUTPUT PULSE WIDTH TRIP LEVEL, tFO (Tj = 25C) = 1.0
1.0
1.0
1.0
0.8
0.8
0.8
VD = 15V
VD = 15V
0 0 13 15 17
CONTROL SUPPLY VOLTAGE, VD, (VOLTS)
0 -60
20
100
180
0 -60
20
100
180
JUNCTION TEMPERATURE, Tj, (C)
JUNCTION TEMPERATURE, Tj, (C)
CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION TRIP RESET LEVEL, UVt, UVr, (VOLTS)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
15
VD = 15V UVt UVr
101
101
100
100
13
10-1
10-1
11
10-2
SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.21C/W
10-2
SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.35C/W
0 -60
20
100
180
10-3 10-3
10-2
10-1
TIME, (s)
100
10 1
10-3 10-3
10-2
10-1
TIME, (s)
100
10 1
JUNCTION TEMPERATURE, Tj, (C)
Sep.1998

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