Part Number Hot Search : 
AO4450 FGF2003 2SD946AP STK0160F 1C220 GT86DT 02M91V D4148
Product Description
Full Text Search
 

To Download ST2302 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 N Channel Enchancement Mode MOSFET 3.6A DESCRIPTION
ST2302
The ST2302 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE 20V/3.6A, RDS(ON) = 80m-ohm @VGS = 4.5V 20V/2.4A, RDS(ON) = 95m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
D G
1
1.Gate 2.Source
S
2
3.Drain
3
S02YA
1 2
S: Subcontractor Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page 1
N Channel Enchancement Mode MOSFET 3.6A
ST2302
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150J ) TA=25J TA=70J Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25J TA=70J Symbol VDSS VGSS ID IDM IS PD TJ TSTG Rc
JA
Typical 20 +/-12 2.8 2.2 10 1.6 1.25 0.8 150 -55/150 100
Unit V V A A A W J J J /W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page2
N Channel Enchancement Mode MOSFET 3.6A
ST2302
ELECTRICAL CHARACTERISTICS ( Ta = 25J Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss VDS=10V,VGS=4.5V IDY -3.6A VDS=10V,VGS=0V F=1MHz 5.4 0.65 1.4 340 115 33 12 36 34 10 10 nC Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) Condition VGS=0V,ID=10uA VDS=VGS,ID=50uA VDS=0V,VGS=8V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=55J VDSU 5V,VGS=4.5V VDSU 5V,VGS=2.5V VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A VDS=5V,ID=3.6V IS=-1.6A,VGS=0V Min Typ Max Unit 20 0.45 1.2 V V
100 nA 1 10 6 4 uA A 0.05 0.08 [ 0.07 0.095 10 S 0.85 1.2 V
gfs
VSD
pF 25 60 nS 60 25
td(on) tr td(off) tf
VDD=10V,RL=5.5[ ID=3.6A,VGEN=4.5V RG=6[
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page3
N Channel Enchancement Mode MOSFET 3.6A SOT-23-3L PACKAGE OUTLINE
ST2302
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295
Page4
N Channel Enchancement Mode MOSFET 3.6A TYPICAL CHARACTERISTICS
ST2302
Page 5
N Channel Enchancement Mode MOSFET 3.6A
ST2302
TYPICAL CHARACTERISTICS(25J Unless noted)
Page 6


▲Up To Search▲   

 
Price & Availability of ST2302

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X