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| Composite Transistors XP6215 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For switching/digital circuits 2.10.1 0.65 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.2 0.90.1 s Basic Part Number of Element q 0 to 0.1 UN1215 x 2 elements 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) 0.70.1 0.20.1 s Absolute Maximum Ratings Parameter Rating Collector to base voltage of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 150 150 -55 to +150 Unit V V mA mW C C 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: 8X Internal Connection 1 2 3 Tr1 6 5 4 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance *1 (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE (small/large)*1 VCE(sat) VOH VOL fT R1 Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k VCB = 10V, IE = -2mA, f = 200MHz -30% 150 10 +30% 4.9 0.2 160 0.5 0.99 0.25 V V V MHz k min 50 50 0.1 0.5 0.01 460 typ max Unit V V A A mA Ratio between 2 elements 0.12 -0.02 +0.05 1 Composite Transistors PT -- Ta 250 XP6215 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) IC -- VCE 160 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 400 VCE=10V 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C Forward current transfer ratio hFE 140 IB=1.0mA 0.9mA 0.8mA Ta=25C 350 300 250 200 25C 150 100 50 0 -25C Ta=75C Collector current IC (mA) 120 100 80 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA Ta=75C -25C 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 3000 VO=5V Ta=25C 100 30 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) 0.6 0.8 1.0 1.2 1.4 1000 300 100 30 10 3 10 3 1 0.3 0.1 0.03 0.01 0.1 3 2 1 0 0.1 0.3 1 3 10 30 100 1 0.4 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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