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GP1S94 GP1S94 s Features 1. Subminiature wide-gap type 2. Emitter-detector gap width : 3.5 mm 3. Slit : (0.3) mm 4. With positioning boss Subminiature Wide-gap Type Photointerrupter s Outline Dimensions (Unit : mm) Top View a Circuit diagram : Top View 2 3 1 4 1 2 3 4 Anode Collector Emitter Cathode s Applications 1. FDDs 2. Laser disc players 3. VCRs 3.5 (0.85) a 6.0 3.5 (C0.4) 3.4 a-a section (0.3) Slit width 5.2 Optical center (C0.3) S4 Z 0.4 0.8 + 0.2 0.1 (C0.2) 3.6 0.5 0.15 g 5.0 g 2.54 3 1.2 1.1 1.1- +0 0.1 4 1 2 0.9+0 0.1 * Tolerance : 0.2 * Burrs dimensions : 0.15 MAX. *( ) : Reference dimensions The dimensions indicated by g refer to those measured from the lead base. s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol IF VR P V CEO V ECO IC PC Ptot T opr T stg Tsol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 (Ta=25C) Unit mA V mW V V mA mW mW C C C Input Output Soldering area *1 For MAX. 5 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 1 mm or more GP1S94 s Electro-optical Characteristics Parameter Forward voltage Reverse current Dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC V CE(sat) tr tf Conditions IF = 20mA VR = 3V VCE = 20V VCE = 5V, IF = 5mA IF = 10mA, IC = 40 A VCE = 5V, IC = 100 A RL = 1 000 MIN. 40 TYP. 1.2 50 50 MAX. 1.4 10 100 400 0.4 150 150 (Ta=25C) Unit V A nA A V s s Input Output Transfer characteristics Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Power Dissipation vs. Ambient Temperature 120 Total power dissipation 50 100 Power dissipation P (mW) Forward current I F ( mA) 40 80 Input side power dissipation and output side collector power dissipation 30 60 20 40 10 0 - 25 20 0 - 25 0 25 50 75 85 100 0 25 50 75 85 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig. 3 Forward Current vs. Forward Voltage 500 200 Ta= 75C 50C 25C 0C - 25C Fig. 4 Collector Current vs. Forward Current VCE =5V Ta =25C 1.0 Forward current I F ( mA) 100 50 20 10 5 2 1 0 0.5 1 1.5 2 Collector current Ic (mA) 0.8 0.6 0.4 0.2 2.5 3 0 0 10 20 Forward voltage VF ( V) Forward current I F ( mA) GP1S94 Fig. 5 Collector Current vs. Collector-emitter Voltage 1.0 Fig. 6 Relative Collector Current vs. Ambient Temperature 120 110 IF=50mA IF=5mA VCE=5V Relative collector current (%) 100 90 80 70 60 50 40 30 20 10 0 - 25 Collector current Ic (mA) 0.8 40mA 30mA 0.6 20mA 0.4 0.2 10mA 5mA 0 0 2 4 6 8 10 0 25 50 75 85 Collector-emitter voltage VCE ( V) Ambient temperature Ta (C) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.20 Fig. 8 Dark Current vs. Ambient Temperature 10 - 6 V CE = 20V Collector-emitter saturation voltage V CE (sat) ( V) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 IF =10mA IC =40 A 5 2 ( A) CEO 10 - 7 5 2 Dark current I 0 25 50 75 85 10 - 8 5 2 10 - 9 5 2 - 25 10 - 10 0 25 50 75 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig. 9 Response Time vs. Load Resistance 1000 VCE =5V 500 IC =100 A Test Circuit for Response Time tf tr td Response time ( s) 100 50 VCC Input RD RL Output Input Output 10% 90% 10 5 ts td tr ts tf 1 0.1 1 5 10 50 100 Load resistance R L ( k ) GP1S94 Fig. 10 Detecting Position Characteristics (1) 100 90 IF =5mA VCE =5V L=0 L Fig. 11 Detecting Position Characteristics (2) 100 90 IF =5mA VCE =5V L L=0 Relative collector current (%) Relative collector current (%) 0.5 1 1.5 2 2.5 80 70 60 50 40 30 20 10 0 0 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 Shield distance L (mm) Shield distance L (mm) q Please refer to the chapter "Precautions for Use". |
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