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SFH6943
Low Current Input Mini Optocoupler
FEATURES * Transistor Optocoupler in SOT223/10 Package * End Stackable, 1.27 mm Spacing * Low Current Input * Very High CTR, 150% Typical at IF=1 mA, VCE=5 V * Good CTR Linearity Versus Forward Current * Minor CTR Degradation * Field Effect Stable by TRIOS (TRansparent IOn Shield) * High Collector-Emitter Voltage, VCEO=70 V * Low Coupling Capacitance * High Common Mode Transient Immunity * Isolation Test Voltage: 1768 VRMS APPLICATIONS * Telecommunication * SMT * PCMCIA * Instrumentation DESCRIPTION The SFH6943 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 1768 VRMS isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223/10 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins--a significant space savings as compared to four channels that are electrically isolated individually.
Dimensions in Inches (mm)
10 Anode 1 .016 (.41) Anode 2 Common 3 Cathode Anode 4 Anode 5 .018 (.46) .063 .004 (1.60 .10) .035 (.90) 0.004 (.10) max. .01 (.25) R 0.010 R (.25) 45 .276 .008 (7.01 .20) 10 Emitter 1 9 Emitter 2 8 Common Collector 7 Emitter 3 6 Emitter 4 .002 +.002 -.001 (.05 +.05 -.03) .256 .004 .043 (6.50 .10) (1.09) .200 .005 (5.08 .13) 7
0.138 .004 (3.51 .10)
0.020 .004 (.51 .10) 10 0-7 7 0.020 (.51) min.
Absolute Maximum Ratings Emitter(GaAlAs) Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 V DC Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA Surge Forward Current (tP10 s) . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Total Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mW Detector (Si Phototransistor) Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70 V Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 V Collector Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Surge Collector Current (tP<1 ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Total Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74), t=1 sec. . . . . . . . .1768 VRMS Creepage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 mm Clearance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 . . . . . . . 175 Isolation Resistance VIO=100 V, TA=25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1011 VIO=100 V, TA=100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1010 Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . .-55 to +150C Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . .-55 to +100C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C Soldering Temperature (t=10 sec. max.) Dip soldering plus reflow soldering processes . . . . . . . . . . . . . . . . . 260C
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-319 March 4, 2000-23
Characteristics (TA=25C, unless otherwise specified)
Description Emitter (IR GaAs) Forward Voltage, IF=5 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 A Emitter-Collector Voltage, IEC=10 A Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance Description Coupling Transfer Ratio Coupling Transfer Ratio Collector-Emitter Leakage Current CC Symbol -- -2 63-200 typ, 100 (32) 50 1 -- -3 100-320 typ, 160 (50) 50 pF -4 160-500 typ, 250 (80) 50 Unit % % nA Condition Symbol Min. -- -- -- -- 70 7 -- -- Typ. 1.25 0.01 5 1000 -- -- 6 500 Max. -- 10 -- -- -- -- -- -- Unit V A pF K/W V V pF K/W
VF IR C0 RthJA VCEO VECO CCE RthJA
IE/ IF IE/ IF ICEO
IF=1 mA, VCE=1.5 V IF=0.5 mA, VCC=5 V VCE=10 V
Figure 1. Switching times (non-saturated), typical
IF VCC=5 V
F=10 KHz VO DF=50% IE=2 mA RE=100
Figure 2. Switching waveform (non-saturated)
IF
V0
tR tON tOFF
tF
Description Turn-on Time Rise Time Turn-off Time Fall Time
Symbol
Value 3 2.6 3.1 2.8
Unit
Test Conditions
ton tr toff tf
s
IE=2 mA
RE=100 TA=25C VCC=5 V
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-320
SFH6943 March 4, 2000-23
Figure 3. LED current versus LED voltage VF=f(IF)
101
85 50 2 5 -2 5
Figure 6. Collector-emitter leakage current (typ.) IF=0, TA=25C, ICEO=f(VCE)
10 3
Figure 9. TA=25C, IF=1 mA, VCC=5 V, ton, tr, toff,tt=f(RL)
103
10 2
10
100
101
toff tf
I F / mA
ICEO/nA
t / us
100
10 -1
ton 101 tr
10 -1
10 -2
10 -2 .8 .9 1 1.1 VF/V 1.2 1.3 1.4
10 -3
0
10
20 30 40 VCE/ V
50 60 70
100 102
103 RL/OHM
104
105
SFH6941/f1
Figure 4. Non-saturated current transfer normalized to IF=1 mA, NCTR=f(IF)
2.0 1.8 1.6 1.4 1.2 NCTR 1.0 .8 .6 V C E =1.5V T A =25C I F =1mA
Figure 7. Permissible forward current diode IF=f(TA=25C)
8 7 6 5 4 3 2
Figure 10. Transistor output characteristics TA=25C, ICE=1 (VCE, IF,)
.4 .2 0 10 - 4 I F /A 10 - 3 10 - 2
1 0 0 10 20 30 40 50 60 70 80 90 100 T A /C
Figure 5. Transistor capacitance (typ.)TA=25C, f=1MHz, CCE=f(VCE)
25.0 22.5 20.0 17.5 15.0
Figure 8. Permissible power dissipation Ptot=f(TA)
30
I F /m A
25 Transistor 20
CCE/PF
12.5 10.0 7.5 5.0 2.5 0
P to t /m W
CCE
15 Diode 10
5
10 -2
10 -1
10 0
101
102
0 0 10 20 30 40 50 60 70 80 90 100 T A /C
SFH6943 2-321 March 4, 2000-23
VCE/V
2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636)

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