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SKW07N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 40lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter - SMPS * NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C
G
E
P-TO-247-3-1 (TO-247AC)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 C
1)
VCE 1200V
IC 8A
Eoff 0.7mJ
Tj 150C
Package TO-247AC
Ordering Code Q67040-S4280
Symbol VCE IC
Value 1200 16.5 7.9
Unit V A
ICpul s IF
27 27
13 7 IFpul s VGE tSC Ptot 27 20 10 125 V s W
VGE = 15V, 100V VCC 1200V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
Power Semiconductors
SKW07N120
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 7 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 35 0 A , V C E = V G E V C E =1200V,V G E =0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA TO-247AC
1 2.5 40
K/W
Symbol
Conditions
Value min. 1200 2.5 typ. 3.1 3.7 2.0 3 1.75 4 6 720 90 40 70 13 75 5 max. 3.6 4.3 2.4
Unit
V
A 100 400 100 870 110 50 90 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E =0V,V G E =20V V C E = 20 V , I C = 8 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s 10 0 V V C C 12 0 0 V, T j 15 0 C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Jul-02
Power Semiconductors
SKW07N120
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm d i r r /d t T j =2 5 C , V R = 8 00 V , I F = 8 A, d i F / d t =4 0 0 A/ s 0.3 9 400 C A A/s 60 ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. 27 29 440 21 0.6 0.4 1.0 35 38 570 27 0.8 0.55 1.35 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 , 1) L =1 8 0n H, 1) C = 4 0p F Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V R = 8 00 V , I F = 8 A, d i F / d t =5 0 0 A/ s 30 26 490 30 1.0 0.7 1.7 36 31 590 36 1.2 0.9 2.1 mJ ns Symbol Conditions Value min. typ. max. Unit
Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F
1)
-
170
ns
Qrr Irrm d i r r /d t
1.1 15 110
C A A/s
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
Power Semiconductors
3
Jul-02
SKW07N120
35A
Ic
30A
10A
tp=5s 15s
IC, COLLECTOR CURRENT
20A 15A
TC=80C
IC, COLLECTOR CURRENT
25A
50s
200s 1A 1ms
TC=110C 10A 5A 0A 10Hz
Ic
0.1A
DC
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 47)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
150W
20A
125W
100W
75W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPATION
15A
10A
50W
5A
25W
0W 25C
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Jul-02
SKW07N120
25A 25A
20A
20A VGE=17V
IC, COLLECTOR CURRENT
15A
10A
15V 13V 11V 9V 7V
IC, COLLECTOR CURRENT
15A
10A
VGE=17V 15V 13V 11V 9V 7V
5A
5A
0A 0V
1V
2V
3V
4V
5V
6V
7V
0A 0V
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
25A
6V IC=16A 5V
20A
IC, COLLECTOR CURRENT
4V
IC=8A IC=4A
15A TJ=+150C TJ=+25C 10A TJ=-40C
3V
2V
5A
1V
0A 3V
5V
7V
9V
11V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Jul-02
SKW07N120
000ns td(off) td(off)
t, SWITCHING TIMES
tf 100ns
t, SWITCHING TIMES
100ns
td(on) tr 10ns 0A 5A 10A 15A 20A
tf td(on) tr 10ns 0
20
40
60
80
100
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 4 7 , dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 8A, dynamic test circuit in Fig.E )
6V
td(off)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5V
t, SWITCHING TIMES
4V
max.
100ns
3V
typ.
2V
min.
td(on) tf 10ns -50C 0C 50C 100C
tr
1V
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 8A, RG = 4 7, dynamic test circuit in Fig.E )
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
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SKW07N120
2.5mJ 5mJ
*) Eon and Ets include losses due to diode recovery.
Ets* 2.0mJ
*) Eon and Ets include losses due to diode recovery.
Ets*
E, SWITCHING ENERGY LOSSES
4mJ
Eon*
E, SWITCHING ENERGY LOSSES
1.5mJ Eon* 1.0mJ Eoff
3mJ
2mJ
Eoff
1mJ
0.5mJ
0mJ 0A 5A 10A 15A 20A
0.0mJ 0
20
40
60
80
100
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 4 7 , dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 8A, dynamic test circuit in Fig.E )
2.0mJ
*) Eon and Ets include losses due to diode recovery.
Ets*
10 K/W
0
1.5mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5 0.2
-1
E, SWITCHING ENERGY LOSSES
0.1 0.05 0.02
R,(K/W) 0.1020 0.40493 0.26391 0.22904
R1
10 K/W
Eon* 1.0mJ Eoff 0.5mJ
10 K/W
-2
0.01
, (s) 0.77957 0.21098 0.01247 0.00092
R2
0.0mJ -50C
single pulse
0C
50C
100C
150C
10 K/W 1s
-3
C 1 = 1 / R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 8A, RG = 4 7, dynamic test circuit in Fig.E )
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
7
Jul-02
SKW07N120
20V
1nF
VGE, GATE-EMITTER VOLTAGE
15V
Ciss
10V
UCE=960V
C, CAPACITANCE
100pF Coss
5V
Crss 0V 0nC 20nC 40nC 60nC 80nC 0V 10V 20V 30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 8A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
30s
150A
tsc, SHORT CIRCUIT WITHSTAND TIME
25s
20s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
11V 12V 13V 14V 15V
100A
15s
10s
50A
5s
0s 10V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V VCE 1200V, TC = 25C, Tj 150C)
Power Semiconductors
8
Jul-02
SKW07N120
350ns 1.50C
300ns
1.25C
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
250ns
IF=7A
IF=7A
1.00C
200ns
0.75C
IF=3.5A
150ns
0.50C
100ns
IF=3.5A
50ns
0.25C
0ns 200A/s
400A/s
600A/s
800A/s
0.00C 200A/s
400A/s
600A/s
800A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
25A
300A/s
Irr, REVERSE RECOVERY CURRENT
IF=7A
OF REVERSE RECOVERY CURRENT
20A
d i r r /d t, DIODE PEAK RATE OF FALL
IF=3.5A
200A/s
15A
IF=7A
10A
IF=3.5A
100A/s
5A
0A 200A/s
400A/s
600A/s
800A/s
0A/s 200A/s
400A/s
600A/s
800A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150C, dynamic test circuit in Fig.E )
Power Semiconductors
9
Jul-02
SKW07N120
3.0V 20A 2.5V IF=14A
15A TJ=150C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
2.0V
IF=7A IF=3.5A
1.5V
10A TJ=25C
1.0V
5A
0.5V
0A 0V
1V
2V
3V
4V
0.0V 0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
10 K/W 0.2 0.1 0.05
-1
0
0. 0 01 .0 2
10 K/W
R,(K/W) 0.75885 0.88470 0.85670
R1
, (s)= 0.09354 0.00543 0.00042
R2
single pulse 10s 100s 1ms
C 1 = 1 / R 1 C 2 = 2 /R 2
10ms
100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
Power Semiconductors
10
Jul-02
SKW07N120
TO-247AC
symbol
dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Q
Power Semiconductors
11
Jul-02
SKW07N120
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF.
Power Semiconductors
12
Jul-02
SKW07N120
Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Jul-02

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