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SSM9930M
DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Low on-resistance Full-bridge applications, such as LCD monitor inverter
SO-8
P1S/P2S P1G N2G N1S/N2S N1D/P1D N1G P2G N2D/P2D
N-CH
BV DSS R DS(ON) ID
30V 33m 6.3A -30V 55m -5.1A
P-CH
BV DSS
RDS(ON) ID
P1S P1G P2S
Description
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9930M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for applications such as low-voltage inverters and motor drives.
N1G
P2G
P1N1D
P2N2D
N2G N1S N2S
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25C ID @ TA=70C IDM PD @ TA=25C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating N-channel 30 25 6.3 4.2 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 25 -5.1 -3.4 -20
Units V V A A A W W/C C C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 62.5
Unit C/W
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SSM9930M
N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage
2
Test Conditions VGS=0V, ID=250uA
Min. 30 1 -
Typ. Max. Units 0.037
33 60 3 1 25 100 -
V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
BV DSS/ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA
Static Drain-Source On-Resistance
VGS=10V, ID=5A VGS=4.5V, ID=3A
5.2 7.1 2.3 3.8 7.2 10.4 18 7.8 600 230 94
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=25V ID=5A VDS=15V VGS=4.5V VDS=15V ID=1A RG=6 ,VGS =10V RD=15 VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2
Test Conditions IS=1.7A, VGS=0V IS=1.7A, VGS=0V dI/dt=100A/s
Min. -
Typ. Max. Units 21.4 16 1.2 V ns nC
Reverse Recovery Time Reverse Recovery Charge
10/21/2004 Rev.1.01
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SSM9930M
P-channel Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
Test Conditions VGS=0V, ID=250uA
2
Min. -30 -1 -
Typ. -0.037
Max. Units 55 100 -3 -1 -25 100 V V/C m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF
BVDSS/ Tj
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Breakdown Voltage Temperature Coefficient Reference to 25C,ID=-1mA
VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V V =-24V, VGS=0V DS VGS= 25V ID=-5A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6 ,VGS =-10V RD=15 VGS=0V VDS=-25V f=1.0MHz
4.8 7.3 2.5 3.8 10.8 7.6 19.6 17.5 486 185.5 133.8
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions IS=-1.7A, VGS=0V IS=-1.7A, VGS=0V dI/dt=-100A/s Min. Typ. 21 15 Max. Units -1.2 V ns nC
Notes:
1.Pulse width limited by max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135C/W when mounted on min. copper pad.
10/21/2004 Rev.1.01
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SSM9930M
N-channel
25 25
T A =25 o C
20
10V 8.0V 6.0V ID , Drain Current (A) 4.0V
20
T A =150 o C
10V 8.0V 6.0V
ID , Drain Current (A)
15
15
4.0V
10
10
V G =3.0V
5
5
V G =3.0V
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
40
I D =5A T A =25C Normalized RDS(ON)
I D =5A
1.6
V G =10V
1.4
RDS(ON) (m )
35
1.2
30
1.0
25 0.8
20
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
2
10.00
1.8
1.00
T j =150 o C
T j =25 o C VGS(th) (V)
1.6
IS(A)
1.4
0.10
1.2
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j ,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage vs.
Reverse Diode
10/21/2004 Rev.1.01
Junction Temperature
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SSM9930M
N-channel
12
1000
f=1.0MHz Ciss
VGS , Gate to Source Voltage (V)
10
I D =4.5A V DS =15V Coss C (pF)
8
6
100
Crss
4
2
0 0 2 4 6 8 10 12 14
10
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (Rthja)
10
0.2
1ms ID (A) 10ms 100ms
0.1
0.1
0.1 0.05
1
0.02 0.01
PDM t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135C/W
0.01
Single Pulse
1s T A =25 o C Single Pulse DC
1 10 100
0.01
0.001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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SSM9930M
P-channel
25 25
T A =25 o C
20
-10V -8.0V -ID , Drain Current (A) -6.0V
20
T A =150 o C
-10V -8.0V -6.0V
-ID , Drain Current (A)
15
15
-4.0V
10
10
-4.0V
5
5
V G =-3.0V
0 0 1 2 3 4 5 6 0 0 1 2 3 4
V G =-3.0V
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
90
I D =-5A T A =2\5C
I D =-5A
1.6
V G = -10V
80
Normalized RDS(ON)
3 4 5 6 7 8 9 10 11
1.4
RDS(ON) (m )
70
1.2
60
1
50
40
0.8
30
0.6 -50 0 50 100 150
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
3
10.00
2.5 1.00
T j =150 o C
T j =25 o C -VGS(th) (V)
-IS(A)
2
0.10 1.5
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
1 -50 0 50 100 150
-V SD ,Source-to-Drain Voltage (V)
T j ,Junction Temperature (
o
C)
Fig 5. Forward Characteristic of Reverse Diode
10/21/2004 Rev.1.01
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM9930M
P-channel
14
10000
f=1.0MHz
12
-VGS , Gate to Source Voltage (V)
I D =-5A V DS =-15V
1000
10
8
C (pF)
Ciss Coss Crss
100
6
4
2
0
10
0 2 4 6 8 10 12 14
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (Rthja)
0.2
10
1ms 10ms -ID (A)
1
0.1
0.1
0.05
100ms 1s
0.1
0.02 0.01
PDM t T
Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135C/W
0.01
Single Pulse
T A =25 o C Single Pulse
0.01 0.1 1 10
DC
0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
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Fig 12. Gate Charge Waveform
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SSM9930M
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
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