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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAV23 General purpose double diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose double diode FEATURES * Small plastic SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 200 V * Repetitive peak reverse voltage: max. 250 V * Repetitive peak forward current: max. 625 mA. handbook, halfpage BAV23 PINNING PIN 1 2 3 4 DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1) DESCRIPTION The BAV23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The diodes are not connected. 4 3 4 3 APPLICATIONS * General purpose where high breakdown voltages are required. 1 1 Top view 2 2 MAM059 Marking code: L30. Fig.1 Simplified outline (SOT143) and symbol. 1996 Sep 17 2 Philips Semiconductors Product specification General purpose double diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRRM VR VR IF PARAMETER repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage continuous reverse voltage continuous forward current series connection single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 9 3 1.7 250 +150 150 series connection - - - - - CONDITIONS MIN. - MAX. 250 500 200 400 225 125 625 BAV23 UNIT V V V V mA mA mA A A A mW C C 1996 Sep 17 3 Philips Semiconductors Product specification General purpose double diode ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 100 mA IF = 200 mA VF forward voltage series connection; see Fig.3 IF = 100 mA IF = 200 mA IR reverse current see Fig.5 VR = 200 V VR = 200 V; Tj = 150 C IR reverse current series connection VR = 400 V VR = 400 V; Tj = 150 C Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 series connection; f = 1 MHz; VR = 0; see Fig.6 trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.7 - - - - - - - - 100 100 5 2.5 50 100 100 - - 2.0 2.5 - - 1.0 CONDITIONS MIN. MAX. BAV23 UNIT V V V V nA A nA A pF pF ns 1.25 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W 1996 Sep 17 4 Philips Semiconductors Product specification General purpose double diode GRAPHICAL DATA BAV23 300 IF (mA) 200 MBD033 handbook, halfpage 600 MBG384 IF (mA) (1) (2) (3) single diode loaded 400 double diode loaded 100 200 0 0 100 T amb ( oC) 200 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 5 Philips Semiconductors Product specification General purpose double diode BAV23 102 handbook, halfpage IR (A) 10 MBG381 handbook, halfpage 1.0 MBG447 Cd (pF) 0.8 1 (1) (2) 0.6 10 1 0.4 10 2 0 100 Tj (oC) 200 0.2 0 2 4 6 VR (V) 8 (1) VR = 200 V; maximum values. (2) VR = 200 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 3 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 6 Philips Semiconductors Product specification General purpose double diode PACKAGE OUTLINE BAV23 handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.8 SOT143. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 17 7 |
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