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Datasheet File OCR Text: |
HL7859MG Visible High Power Laser Diode Description The HL7859MG is a 0.78 m band GaAlAs laser diode with a multi-quantum well (MQW)structure. It is suitable as a light source for optical disc memories and various other types of optical equipment. Hermetic sealing of the small package (5.6 mm) assures high reliability. Application * Optical disc memories. Features * * * * High output power Visible light output Small package Low astigmatism : 35 mW (CW) : p = 775 to 795 nm : 5.6 mm dia. : 5 m Typ (P O = 5 mW) 185 HL7859MG Absolute Maximum Ratings (TC = 25C) Item Optical output power Pulse optical output power Laser diode reverse voltage Symbol PO PO (pulse) VR(LD) Value 35 42 * 2 30 -10 to +60 -40 to +85 Unit mW mW V V C C Photo diode reverse voltage VR(PD) Operating temperature Storage temperature Topr Tstg Note: Pulse condition : Pulse width = 1 s, duty = 50% Optical and Electrical Characteristics (TC = 25C) Items Optical output power Threshold current Operating voltage Slope efficiency Lasing wavelength Beam divergence parallel to the junction Beam divergence parpendicular to the junction Monitor current Asitgmatism Is AS 18 0.2 -- 23 -- 5 28 2 -- deg. mA m PO = 35 mW PO = 35 mW, VR(PD) = 5 V PO = 5 mW, NA = 0.4 Symbols Min PO Ith VOP s p // 35 -- -- 0.35 775 8 Typ -- 35 2.1 0.65 785 9.5 Max -- 60 2.5 0.80 795 12 Units mW mA V Test Conditions Kink free * -- PO = 35 mW mW/mA 21 (mW) / (I(28 mW) - I (7 mW) ) nm deg. PO = 35 mW PO = 35 mW Note: Kink free is confirmed at the temperature of 25C. 186 HL7859MG Curve Characteristics 187 HL7859MG 188 HL7859MG 189 |
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