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| Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175C Operating Temperature Fast Switching Ease of Paralleling Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. VDSS = 100V RDS(on) = 0.025 ID = 61A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 61 43 240 230 1.5 20 830 37 23 5.5 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ---- ---- ---- Typ. ---- 0.24 ---- Max. 0.65 ---- 40 Units C/W Revision 0 IRFP2410 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 --- --- 2.0 16 --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.025 VGS = 10V, I D = 37A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 37A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 180 ID = 37A 30 nC VDS = 80V 69 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 37A ns --- RG = 6.2 --- RD = 1.3, See Fig. 10 Between lead, --- 5.0 --- 6mm (0.25in.) nH from package --- 13 --- and center of die contact --- 4600 --- VGS = 0V --- 1100 ---- pF VDS = 25V --- 200 --- = 1.0MHz, See Fig. 5 Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 16 100 120 97 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- 61 A 240 V ns nC --- 2.5 180 270 990 1500 Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 37A, V GS = 0V TJ = 25C, I F = 37A di/dt = 100A/s S+LD) Intrinsic turn-on time is negligible (turn-on is dominated by L Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 37A, di/dt 200A/s, V DD V(BR)DSS, T J 175C Pulse width 300s; duty cycle 2%. VDD = 25V, starting T J = 25C, L = 270H R G = 25, IAS = 37A. (See Figure 12) IRFP2410 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , Drain-to-Source Current (A) D 100 I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 10 4.5V 1 0.01 20s PULSE WIDTH TC = 25C 0.1 1 10 A 100 1 0.01 20s PULSE WIDTH TC = 175C 0.1 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TC = 25oC Fig 2. Typical Output Characteristics, TC = 175oC 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 61A I D , Drain-to-Source Current (A) 2.5 TJ = 25C 100 TJ = 175C 2.0 1.5 10 1.0 0.5 1 4 5 6 7 VDS = 50V 20s PULSE WIDTH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 V GS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFP2410 8000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 37A V DS = 80V V DS = 50V V DS = 20V 16 C, Capacitance (pF) 6000 Ciss 12 4000 Coss 2000 8 4 Crss 0 1 10 100 A 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10s ID , Drain Current (A) TJ = 25C TJ = 175C 100 100 100s 1ms 10 10ms 10 0.0 1.0 2.0 3.0 4.0 VGS = 0V 5.0 A 1 1 T C = 25C T J = 175C Single Pulse 10 100 A 1000 6.0 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFP2410 VDS 70 RD VGS RG D.U.T. VDD 60 ID, Drain Current (Amps) 50 10 V Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 30 20 10 0 25 50 75 100 125 150 A 175 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PD M t 1 t 2 N otes : 1 . D uty fac tor D = t 1 /t 2 0.001 0.00001 2. P ea k T J = P D M x Z thJ C + T C A 10 0.0001 0.001 0.01 0.1 1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFP2410 EAS , Single Pulse Avalanche Energy (mJ) 2000 TOP 1600 BOTTOM ID 15A 26A 37A 10 V 1200 Fig 12a. Unclamped Inductive Test Circuit 800 400 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFP2410 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * dv/dt controlled by R G * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFP2410 Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B- 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN Part Marking Information TO-247AC EXAMPLE : THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 3A1Q 9302 PART NUMBER DATE CODE (YYWW) YY = YEAR WW WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. |
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