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| J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 PRODUCT SUMMARY Part Number J/SST201 J/SST202 J/SST204 SST201 SST202 SST204 VGS(off) (V) -0.3 to -1.5 -0.8 to -4 -0.3 to -2 V(BR)GSS Min (V) -40 -40 -25 gfs Min (mS) 0.5 1 0.5 IDSS Min (mA) 0.2 0.9 0.2 FEATURES D D D D Low Cutoff Voltage: J201 <1.5 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System Sensitivity D High Quality Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultra High Input Impedance Pre-Amplifiers DESCRIPTION The J/SST201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. The J/SST201 is excellent for battery powered equipment and low current amplifiers. The J series, TO-226 (TO-92) plastic package, provides low cost, while the SST series, TO-236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products in TO-206AA (TO-18) packaging, see the 2N4338/4339/4340/4341 data sheet. For applications information see AN102 and AN106. TO-226AA (TO-92) 1 D 2 S G 3 2 1 TO-236 (SOT-23) D S 3 G Top View Top View J201 J202 J204 SST201 (P1)* SST202 (P2)* SST204 (P4)* *Marking Code for TO-236 Document Number: 70233 S-40393--Rev. G, 15-Mar-04 www.vishay.com 1 J/SST201 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST201 J/SST202 J/SST204c Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 0.1 mA VDS = 15 V, VGS = -5 V IG = 1 mA , VDS = 0 V -2 -1 -2 2 0.7 -40 -0.3 0.2 -1.5 1 -100 -40 -0.8 0.9 -4 4.5 -100 -25 -0.3 0.2 -2 3 -100 V mA pA nA pA V Dynamic Common-Source Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs Ciss Crss en VDS = 15 V, VGS = 0 V f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz 4.5 pF 1.3 6 nV Hz NPA, NH 0.5 1 0.5 mS Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves. www.vishay.com 2 Document Number: 70233 S-40393--Rev. G, 15-Mar-04 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 10 IDSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 5 Gate Leakage Current 10 nA gfs - Forward Transconductance (mS) IG @ ID = 500 mA ID = 100 mA 1 nA IG - Gate Leakage (A) TA = 125_C IGSS @ 125_C ID = 500 mA ID = 100 mA 1 pA TA = 25_C IGSS @ 25_C 8 4 6 gfs 4 IDSS 3 100 pA 2 10 pA 2 1 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0.1 pA 0 15 VDG - Drain-Gate Voltage (V) 30 1500 rDS(on) - Drain-Source On-Resistance ( ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 gfs - Forward Transconductance (mS) 2 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 1200 gos 8 1.6 TA = -55_C gos - Output Conductance (mS) 900 6 rDS 4 1.2 25_C 0.8 600 300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz 0 0 -1 -2 -3 -4 -5 VGS(off) - Gate-Source Cutoff Voltage (V) 2 0.4 125_C 0 0 0.01 0.1 ID - Drain Current (mA) 1 400 Output Characteristics VGS(off) = -0.7 V VGS = 0 V 2 Output Characteristics VGS(off) = -1.5 V 360 -0.1 V ID - Drain Current (mA) ID - Drain Current (mA) 1.6 VGS = 0 V 1.2 -0.3 V 0.8 -0.6 V 0.4 -1.2 V -0.9 V 240 160 -0.2 V -0.3 V 80 -0.5 V -0.4 V 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) Document Number: 70233 S-40393--Rev. G, 15-Mar-04 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) www.vishay.com 3 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 500 Transfer Characteristics VGS(off) = -0.7 V VDS = 10 V 2 Transfer Characteristics VGS(off) = -1.5 V VDS = 10 V 400 ID - Drain Current (mA) ID - Drain Current (mA) 1.6 TA = -55_C 1.2 25_C 300 TA = -55_C 25_C 200 125_C 100 0.8 0.4 125_C 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-Source Voltage (V) 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 1.5 gfs - Forward Transconductance (mS) Transconductance vs. Gate-Source Voltage VGS(off) = -0.7 V VDS = 10 V f = 1 kHz 4 gfs - Forward Transconductance (mS) Transconductance vs. Gate-Source Voltage VGS(off) = -1.5 V VDS = 10 V f = 1 kHz 1.2 TA = -55_C 0.9 25_C 3.2 2.4 TA = -55_C 25_C 0.6 125_C 0.3 1.6 0.8 125_C 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VGS - Gate-Source Voltage (V) 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 200 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID rDS(on) - Drain-Source On-Resistance ( ) 2000 On-Resistance vs. Drain Current 160 AV - Voltage Gain 1600 VGS(off) = -0.7 V 120 1200 80 -1.5 V 40 VGS(off) = -0.7 V 800 -1.5 V 400 0 0.01 0.1 ID - Drain Current (mA) www.vishay.com 1 0 0.01 0.1 ID - Drain Current (mA) Document Number: 70233 S-40393--Rev. G, 15-Mar-04 1 4 J/SST201 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 10 Common-Source Input Capacitance vs. Gate-Source Voltage Crss - Reverse Feedback Capacitance (pF) f = 1 MHz 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz 8 Ciss - Input Capacitance (pF) 4 6 VDS = 0 V 4 10 V 2 3 VDS = 0 V 2 1 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 3 Output Conductance vs. Drain Current VGS(off) = -1.5 V VDS = 10 V f = 1 kHz Hz 20 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V gos - Output Conductance (S) 2.4 16 en - Noise Voltage nV / 1.8 TA = -55_C 0.8 12 ID @ 100 mA 25_C 8 VGS = 0 V 4 0.4 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 0 10 100 1k f - Frequency (Hz) 10 k 100 k 300 Output Characteristics VGS(off) = -0.7 V VGS = 0 V 1.0 Output Characteristics VGS(off) = -1.5 V 240 ID - Drain Current (A) -0.1 180 -0.2 120 -0.5 -0.3 -0.4 ID - Drain Current (mA) 0.8 VGS = 0 V 0.6 -0.3 0.4 -0.6 60 0.2 -0.9 -1.2 0 0 0.1 0.2 0.3 0.4 0.5 VDS - Drain-Source Voltage (V) 0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) Document Number: 70233 S-40393--Rev. G, 15-Mar-04 www.vishay.com 5 |
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