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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF844/D High Voltage Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER BF844 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 450 6.0 300 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 450 450 6.0 -- -- -- -- -- -- -- 0.1 500 0.1 Vdc Vdc Vdc Vdc Adc nAdc Adc v 300 ms, Duty Cycle v 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 BF844 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector - Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 50 45 20 VCE(sat) -- -- -- VBE(sat) -- 0.4 0.5 0.75 0.75 Vdc -- 200 -- -- Vdc -- DYNAMIC CHARACTERISTICS High Frequency Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Turn-On Time (VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc) Turn-Off Time (VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc) 1. Pulse Test: Pulse Width |hfe| Cob Cib ton toff 1.0 -- -- -- -- -- 6.0 110 0.6 10 pF pF s s v 300 ms, Duty Cycle v 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data BF844 160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 -55C 20 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 300 25C TA = 125C VCE = 10 V VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.5 0.4 IC = 1.0 mA IC = 10 mA IC = 50 mA 0.3 TA = 25C 0.2 0.1 0 10 30 100 1.0 k 3.0 k 300 IB, BASE CURRENT (A) 10 k 50 k Figure 1. DC Current Gain Figure 2. Collector Saturation Region 1.0 TA = 25C VBE(sat) @ IC/IB = 10 1000 1.0 ms IC, COLLECTOR CURRENT (mA) 300 200 100 TA = 25C TC = 25C 100 s 0.8 V, VOLTAGE (VOLTS) 1.0 s 0.6 VBE(on) @ VCE = 10 V 0.4 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE 10% 2.0 10 20 50 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500 0.2 VCE(sat) @ IC/IB = 10 2.0 0 0.1 0.3 1.0 30 3.0 10 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0 Figure 3. On Voltages Figure 4. Active Region Safe Operating Area 100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 TA = 25C f = 1.0 MHz 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob |h fe |, SMALL-SIGNAL CURRENT GAIN Cib 10 3.0 2.0 1.5 1.0 0.1 VCE = 10 V f = 10 MHz TA = 25C 0.2 0.3 1.0 3.0 10 IC, COLLECTOR CURRENT (mA) 30 100 Figure 5. Capacitance Figure 6. High Frequency Current Gain Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 BF844 10 5.0 +9.7 V PW = 50 s DUTY CYCLE = 2.0% Vin t, TIME ( s) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C VBE(off) = 4.0 Vdc tr td 50 100 Vin RB 0 -4.0 V VCC RL Vout 0.2 0.1 1.0 3.0 10 30 IC, COLLECTOR CURRENT (mA) CS 4.0 pF* Figure 7. Turn-On Switching Times and Test Circuit 10 5.0 ts t, TIME ( s) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 tf -11.4 V +10.7 V Vin PW = 50 s DUTY CYCLE = 2.0% 0.2 0.1 1.0 VCC RL 100 Vin RB CS 4.0 pF* Vout Figure 8. Turn-Off Switching Times and Test Circuit * Total Shunt Capacitance or Test Jig and Connectors. 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data BF844 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 BF844 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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