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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99 BLU99/SL UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES * multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile; * gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D). QUICK REFERENCE DATA R.F. performance at Th = 25 C in a common-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. VCE V 12,5 12,5 f MHz 470 900 PL W 5 4 > typ. Gp dB
BLU99 BLU99/SL
C % 10,5 > 7,0 typ. 60 60
PIN CONFIGURATION
PINNING - SOT122A; SOT122D PIN
fpage
DESCRIPTION collector emitter base emitter
4
1 2 3 4
age
4 1 3 1 3
2 Top view
MBK187
2
MSB055
Fig.1
Simplified outline. SOT122A (BLU99).
Fig.2
Simplified outline. SOT122D (BLU99/SL).
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average peak value; f > 1 MHz D.C. power dissipation up to Tmb = 50 C R.F. power dissipation f > 1 MHz; Tmb = 25 C Storage temperature Operating junction temperature Ptot (r.f.) Tstg Tj max. max. 19 W 200 C -65 to + 150 C IC;IC(AV) ICM Ptot (d.c.) max. max. max. 0,8 A 2,5 A 12,5 W VCBO VCEO VEBO max. max. max. 36 V 16 V 3V
BLU99 BLU99/SL
handbook, halfpage
1
MDA372
Tmb = 50 C Th = 70 C
handbook, halfpage
28
MDA373
Ptot IC (A) 20 II (W) III
12
I
10-1
4 1 10 VCE (V) 102 0 20 40 60 80 100 Th (C)
Rth mb-h = 0,6 K/W.
I Continuous d.c. operation II Continuous r.f. operation (f > 1 MHz). III Short-time r.f. operation during mismatch (f > 1 MHz).
Fig.3 D.C. SOAR.
Fig.4 Power/temperature derating curves.
THERMAL RESISTANCE (dissipation = 9 W; Tmb = 25 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(rf) Rth mb-h = = 7,5 K/W 0,6 K/W Rth j-mb(dc) = 10 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 10 mA Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy; L = 25 mH; f = 50 Hz RBE = 10 D.C. current gain(2) IC = 0,6 A; VCE = 10 V Transition frequency at f = 500 MHz(1) IC = 0,6 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp = 50 s; < 0,01. 2. Measured under pulse conditions: tp = 300 s; < 0,01. Cre Ccs typ. typ. Cc typ. fT typ. hFE ESBR > > typ. ICES < V(BR)EBO > V(BR)CEO > V(BR)CBO >
BLU99 BLU99/SL
36 V 16 V 3V 5 mA 1 mJ 25 100
4,0 GHz 7,5 pF 5 pF 1,2 pF
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
handbook, halfpage
120
MDA374
handbook, halfpage
5
MDA375
hFE
fT (GHz) 4
80 3
2 40 1
0 0 0.8 1.6 IC (A) 2.4
0 0 0.4 0.8 1.2 1.6 IE (A) 2
Fig.5
VCE = 10 V; Tj = 25 C; typ. values.
Fig.6
VCB = 12,5 V; f = 500 MHz; Tj = 25 C; typ. values.
handbook, halfpage
16 Cc
MDA376
(pF) 14
12
10
8
6 0 4 8 12 16 20 VCB (V)
Fig.7 IE = ie = 0; f = 1 MHz; typ. values.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION (part I) R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 470 MHz; Th = 25 C. MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 5 < typ. PS W 0,45 > 0,32 typ. Gp dB 10,5 < 12 typ.
BLU99 BLU99/SL
IC A 0,665 > 0,60 typ.
C % 60 66
handbook, full pagewidth
C1 T.U.T. L1 50 C2 C4 C3 L2
L6
L7
C8 50 C7
L5 C5 C6 R2
L3
R1 L4
MDA365
+VCC
Fig.8 Class-B test circuit at f = 470 MHz.
List of components: C1 = 2,7 pF multilayer ceramic chip capacitor(1) C2 = C7 = C8 = 1,4-5,5 pF film dielectric trimmer (cat.no. 2222 809 09001) C3 = 7,5 pF multilayer ceramic chip capacitor(1) C4 = 2-9 pF film dielectric trimmer (cat.no. 2222 809 09002) C5 = 100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101) C6 = 100 nF metallized film capacitor (cat. no. 2222 352 45104) L1 L2 L3 L5 L6 L7 = stripline, 22,5 mm x 6,0 mm = 1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2 x 5 mm = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) = 4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2 x 5 mm = stripline, 10,0 mm x 6,0 mm = 1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2 x 5 mm
R1 = R2 = 10 metal film resistor, 0,25 W L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,74) and a thickness of 116 inch. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
handbook, full pagewidth
100 mm
58 mm
rivets
L3
R1 C1 C3 L2
L7 C2 L1 L6 C8
L5 C4 C6 C5 L4 C7
+VCC
R2
MDA366
The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as ground plane. Earth connections are made by hollow rivets.
Fig.9 Printed circuit board and component layout for 470 MHz.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
handbook, halfpage
8
MDA377
handbook, halfpage
PL (W) 6
VCE = 12.5 V
20 Gp
MDA378
100 C (%) 80
(dB) 16
12 4 7.5 V 8
C
C
60
40 Gp Gp 20
2 4
0 0 0.4 0.8 PS (W) 1.2
0 0 2 4 6 PL (W) 8
0
f = 470 MHz; class-B operation; Th = 25 C; typ. values.
f = 470 MHz; class-B operation; Th = 25 C; typ. values. : VCE = 12,5 V; - - - - : VCE = 7,5 V.
Fig.10 Output power.
Fig.11 Power gain and efficiency;
RUGGEDNESS: The device is capable of withstanding a load mismatch with VSWR = 50 (all phases) up to a supply voltage of 15,5 V at rated load power.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
handbook, halfpage
4
MDA379
handbook, halfpage
Zi () 2
ri
10 ZL 8
MDA380
()
RL
6 xi 4 0 2
XL
-2 400
440
480
520
f (MHz)
560
0 400
440
480
520
f (MHz)
560
VCE = 12,5 V; PL = 5 W; Th = 25 C; f = 400-520 MHz; typical values.
VCE = 12,5 V; PL = 5 W; Th = 25 C; f = 400-520 MHz; typical values.
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
handbook, halfpage
15 Gp
MDA381
(dB) 14
13
12
11
10 400
440
480
520
f (MHz)
560
VCE = 12,5 V; PL = 5 W; Th = 25 C; f = 400-520 MHz; typical values.
Fig.14 Power gain.
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION (part II) R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 900 MHz; Th = 25 C MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 4 PS W typ. 0,8 GP dB typ. 7,0 IC A
BLU99 BLU99/SL
C % typ. 60
typ. 0,54
handbook, full pagewidth
C4 L6 BLU99 C1 50 C2 C3 C5 L1 L2 L5
C6 L7
C10 L10 C12 50
L8
C11
C13
C7 L3 R2 L9
MDA382
R1
L4
C9 C8
+VCC = 12.5 V
Fig.15 Class-B test circuit at f = 900 MHz.
March 1993
10
Philips Semiconductors
Product specification
UHF power transistor
List of components: C1 C2 C3 C4 C6 C7 C8 C9 L1 L2 L3 L4 L5 L6 L7 L8 R1 = C12 = 33 pF multilayer ceramic chip capacitor(1) = C13 = 1,4-5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) = C11 = 1,2-3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) = C5 = C10 = 6,2 pF multilayer ceramic chip capacitor(1) = 1 pF multilayer ceramic chip capacitor(1) = 10 pF ceramic feed-through capacitor = 330 pF ceramic feed-through capacitor = 2,2 F tantalum electrolytic capacitor = stripline, 21,0 mm x 1,85 mm = stripline, 5,0 mm x 1,85 mm = 60 nH, 4 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 4312 020 36642) = stripline, 11,3 mm x 6,0 mm = stripline, 10,0 mm x 6,0 mm = stripline, 15,9 mm x 1,85 mm = 280 nH, 15 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm = R2 = 10 metal film resistor, 0,25 W
BLU99 BLU99/SL
L10 = stripline, 28,0 mm x 1,85 mm L1, L2, L5, L6, L7 and L10 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,74) and thickness of 132 inch. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality.
March 1993
11
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
128.5 mm
handbook, full pagewidth
soldered copperstraps
E B E C 80 mm
rivets
L9 C7 L4 R1 L8 L3 C1 C2 C3 C4 B C5 E E C C12 C6 C11 C13 C10 R2 C8 VCC C9
MDA383
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane.
Fig.16 Printed circuit board and component layout for a 900 MHz test circuit. RUGGEDNESS The device is capable of withstanding a load mismatch with VSWR = 50 (all phases) up to a supply voltage of 15,5 V at rated load power. March 1993 12
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
handbook, halfpage
5
MDA384
handbook, halfpage
PL
10 Gp
MDA385
(W) 4
(dB) 8 Gp
100 C (%) 80
3
6 C
60
2
4
40
1
2
20
0 0 0.4 0.8 1.2 PS (W) 1.6
0 0 1 2 3 4 PL (W) f = 900 MHz; VCE = 12,5 V; class-B operation; Th = 25 C; typ. values. 5
0
f = 900 MHz; VCE = 12,5 V; class-B operation; Th = 25 C; typ. values.
Fig.17 Output power.
Fig.18 Power gain and efficiency.
March 1993
13
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
handbook, halfpage
6
MDA386
handbook, halfpage
14
MDA387
Zi () 4
xi
ZL () 10
RL
ri 2 6 XL
0 800
840
880
920
960 1000 f (MHz)
2 800
840
880
920
960 1000 f (MHz)
f = 800-960 MHz; VCE = 12,5 V; PL = 4 W; Th = 25 C; typ. values.
f = 800-960 MHz; VCE = 12,5 V; PL = 4 W; Th = 25 C; typ. values.
Fig.19 Input impedance (series components).
Fig.20 Load impedance (series components).
handbook, halfpage
10 Gp 9
MDA388
(dB)
8
7
6
5 800
850
900
950
1000 f (MHz)
Fig.21 Power gain.
March 1993
14
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINES Studded ceramic package; 4 leads
BLU99 BLU99/SL
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
March 1993
15
Philips Semiconductors
Product specification
UHF power transistor
BLU99 BLU99/SL
Studless ceramic package; 4 leads
SOT122D
D
A
Q c D2
H b
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.17 3.27 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D2 7.24 6.98 H 27.56 25.78 L 9.91 9.14 Q 1.58 1.27
90
OUTLINE VERSION SOT122D
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
March 1993
16
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLU99 BLU99/SL
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
17

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