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PD-94493A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level Rds(on) IRHNA597160 100K Rads (Si) 0.049 IRHNA593160 300K Rads (Si) 0.049 ID Q -47A -47A
IRHNA597160 100V, P-CHANNEL
5 TECHNOLOGY
SMD-2
International Rectifier's R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TM
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC =100C IDM PD @ T C = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight -47 -30 -188 250 2.0 20 400 -47 25 -10 -55 to 150 300 ( for 5s ) 3.3 ( Typical )
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
For footnotes refer to the last page
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1
03/16/06
IRHNA597160
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -2.0 24 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.1 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.049 -4.0 -- -10 -25 -100 100 170 65 30 30 100 70 170 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -30A A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -30A A VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-12V, ID = -47A VDS = -50V VDD = -50V, ID = -47A, VGS =-12V, RG = 2.35,
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6240 1570 115
-- -- --
pF
Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = -25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -47 -188 -5.0 230 1.6
Test Conditions
A
V ns C Tj = 25C, IS = -47A, VGS = 0V A Tj = 25C, IF = -47A, di/dt -100A/s VDD -25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max
-- -- -- 1.6 0.50 --
Units
C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on the International Rectifer Website. For footnotes refer to the last page
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Pre-Irradiation Radiation Characteristics
IRHNA597160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (SMD-2) Diode Forward Voltage A 100K Rads(Si)1 Min Max -100 -2.0 -- -- -- -- -- -- -- -4.0 -100 100 -10 0.05 0.049 -5.0 300KRads(Si)2 Min Max -100 -2.0 -- -- -- -- -- -- -- -5.0 -100 100 -10 0.05 0.049 -5.0 Units V nA A V
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS =-20V VGS = 20 V VDS = -80V, VGS =0V VGS = -12V, ID =-30A VGS = -12V, ID =-30A VGS = 0V, IS = -47A
1. Part number IRHNA597160 2. Part number IRHNA593160
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET (MeV/(mg/cm2)) 37.9 59.7 82.3 Energy (MeV) 252.6 314 350 VDS (V) Range (m) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V 33.1 -100 -100 -100 -100 -100 -100 30.5 -100 -100 -100 -100 -75 -25 28.4 -100 -100 -100 -30 -- --
-120 -100 -80 -60 -40 -20 0 0 5 10 VGS 15 20
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
3
IRHNA597160
Pre-Irradiation
1000
VGS TOP -15V -12V -10V -6.0V -5.5V -5.0V -4.5V BOTTOM -4.0V
1000
VGS -15V -12V -10V -6.0V -5.5V -5.0V -4.5V BOTTOM -4.0V TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
100
-4.0V
10
-4.0V
10
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
1 0.1 1 10 100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
-52A ID = -47A
-I D , Drain-to-Source Current (A)
2.0
TJ = 25 C
100
TJ = 150 C
1.5
1.0
0.5
10 4.0
V DS15 = -25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA597160
10000
8000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -47A -52A VDS =-80V VDS =-50V VDS =-20V
16
C, Capacitance (pF)
Ciss
6000
12
4000
Coss
8
2000
4
Crss
0 1 10 100
0 0 40 80 120
FOR TEST CIRCUIT SEE FIGURE 13
160 200 240
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-ISD , Reverse Drain Current (A)
100
TJ = 150 C
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
10
100s 1ms 10ms
TJ = 25 C
10 Tc = 25C Tj = 150C Single Pulse 1 1 10 100
1
0.1 0.0
V GS = 0 V
1.5 3.0 4.5 6.0
-VSD,Source-to-Drain Voltage (V)
1000
-V DS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHNA597160
Pre-Irradiation
50
V GS
V DS
RD
40
-I D, Drain Current (A)
30
V GS
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VGS
td(on) tr t d(off) tf
0 25 50 75 100 125 150 T C , Case Temperature (C)
10%
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1
0.1
0.001 0.00001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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+
-
RG
D.U.T. V DD
Pre-Irradiation
IRHNA597160
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
800
RG
D.U.T
IAS
+
DRIVER
V DD VDD
A
ID -21A -29.7A BOTTOM -47A TOP
VGS -20V
600
tp
0.01
400
15V
200
Fig 12a. Unclamped Inductive Test Circuit
I AS
0 25 50 75 100 125 150
Starting T , Junction Temperature ( C) Starting TJ, Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-12 V
-12V 12V
.2F .3F
VDS
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IRHNA597160
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = -25V, starting TJ = 25C, L=0.36 mH Peak IL = -47A, VGS = -12V A ISD -47A, di/dt - 450A/s, VDD -100V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2006
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