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| SEMICONDUCTOR TECHNICAL DATA LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. FEATURES Small Surface Mounting Type. (USM) A E M B KDR411 SCHOTTKY BARRIER TYPE DIODE M D 3 Low Forward Voltage : VF max=0.5V High Reliability 2 1 CONSTRUCTION Silicon epitaxial planar. C H N K N DIM A B C D E G H J K L M N MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN J L G MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IO IFSM Tj Tstg RATING 40 20 0.5 3 125 -40 +125 UNIT V V A A 1. NC 2. ANODE 3. CATHODE 2 3 1 USM Marking U3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance VF (1) VF (2) IR CT ) TEST CONDITION IF=10mA IF=500mA VR=10V VR=10V, f=1MHz MIN. TYP. 20 MAX. 0.3 0.5 30 UNIT V V A pF SYMBOL 2003. 2. 24 Revision No : 3 1/2 KDR411 I F - VF 1 FORWARD CURRENT I F (A) REVERSE CURRENT I R (A) 10m I R - VR Ta=125 C 100m Ta =1 25 Ta C =7 5 C Ta =2 5 C Ta =-2 5 C 1m Ta=75 C 10m 100 1m 10 Ta=25 C 100 0 0.1 0.2 0.3 0.4 0.5 0.6 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE V R (V) C T - VR 1K TOTAL CAPACITANCE C T (pF) Ta=25 C f=1MHz 100 10 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) 2003. 2. 24 Revision No : 3 2/2 |
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