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 KSB817
KSB817
Audio Power Amplifier Car Booster Output Amplifier DC to DC Converter
* High Current Capability * High Power Dissipation * Complementary to KSD1047
1
TO-3P
1.Base 2.Collector 3.Emitter
PNP Planar Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature Value - 160 - 140 -6 -8 - 16 80 150 - 40 ~ 150 Units V V V A A W C C
Electrical Characteristics TC=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob tON tF tSTG Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Fall Time Storage Time Test Condition IC = - 5mA, IE = 0 IC = - 10mA, RBE = IE = - 5mA, IC = 0 VCB = - 80V, IE = 0 VBE = - 4V, IC = 0 VCE = - 5V, IC = - 1A VCE = - 5V, IC = - 6A IC = - 5A, IB = - 0.5A VCE = - 5V, IC = - 1A VCE = - 5V, IC = - 1A VCB = - 10V, f = 1MHz VCC = 20V IC = 1A = 10*IB1 = - 10*IB2 RL = 20 15 300 0.25 0.53 1.61 60 20 Min. - 160 - 140 -6 - 0.1 - 0.1 200 - 2.5 - 1.5 V V MHz pF s s s Typ. Max. Units V V V mA mA
* Pulse Test: PW = 20s
hFE Classificntion
Classification hFE1 O 60 ~ 120 Y 100 ~ 200
(c)2000 Fairchild Semiconductor International
Rev. B, November 2000
KSB817
Typical Characteristics
-10 -9
1000
IB =-240mA IB=-200mA
VCE=-5V
IC(A), COLLECTOR CURRENT
-8 -7 -6 -5 -4 -3 -2 -1 -0 -0 -5 -10
hFE, DC CURRENT GAIN
IB=-160mA IB=-120mA IB=-80mA
100
IB=-40mA IB=-20mA
10
-15
-20
-25
-30
-35
-40
-45
-50
1 -0.1
-1
-10
-100
VCE(V),COLLECTOR EMITTER VOLTAGE
IC(A) COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-10
-1
VBE(SAT)(V), SATURATION VOLTAGE
IC =10IB
IC=10IB
VCE(SAT), SATURATION VOLTAGE
-1
-0.1
-0.01 -0.1
-1
-10
-0.1 -0.1
-1
-10
IC(A) COLLECTOR CURRENT
IC(A) COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
-8
1000
VCE=-5V
-7
f=1MHz
IC(mA), COLLECTOR CURRENT
-5 -4 -3 -2 -1 -0 -0.0
Cob(pF), CAPACITANCE
-6
100
10 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1 -10 -100
VBE(V), BASE EMITTER VOLTAGE
VCB(V) COLLECTOR BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
(c)2000 Fairchild Semiconductor International
Rev. B, November 2000
KSB817
Typical Characteristics (Continued)
fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT
-100
-100
VCE=-5V IC MAX. (Pulse)
IC[A], COLLECTOR CURRENT
10 0m
DC
-10
s
IC MAX. (DC)
ms 10
-10
-1
-0.1
*SINGLE NONREPETITIVE PULSE TC=25[ C]
o
-1 -0.1
-1
-10
-0.01 0.1
1
10
100
IC(A) COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Current Gain Bandwidth Product
Figure 8. Safe Operating Area
140
120
PC[W], POWER DISSIPATION
100
80
60
40
20
0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 9. Current Gain Bandwidth Product
(c)2000 Fairchild Semiconductor International
VCEO MAX
Rev. B, November 2000
KSB817
Package Demensions
TO-3P
15.60 0.20
3.80 0.20
13.60 0.20 o3.20 0.10 9.60 0.20
4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. B, November 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E


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