 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 1-Watt Power Amplifier 5 - 6 GHz V 1.1 MAAPSM0008 MAAPSM0008 Features * * * * * U-NII and Hiperlan Applications Saturated Output Power 30.5 dBm at +7.0 V Power Added Efficiency 40 Percent No External RF Matching 4-mm FQFP-N, 16-Lead Package Functional Schematic Pin 16 N/C Pin 1 N/C RFin N/C N/C N/C Description The MAAPSM0008 is a two -stage power amplifier mounted in a standard outline, 16-lead, 4-mm FQFP-N plastic package, designed specifically for the U -NII, MMAC, and Hiperlan bands. The MAAPSM0008 has fully matched 50 ohms input and output, eliminating the need for external RF tuning components. M/A-COM fabricates the MAAPSM0008 using a selfaligned gate MESFET process to realize high power efficiency and small size. The process features full passivation for performance and reliability. N/C Vgg N/C RFout N/C N/C N/C Vdd N/C N/C Pin Configuration Pin 1, 3, 4 ,5 ,7, 8, 9, 12, 13, 14, 15, 16 2 6 10 Function NC Descriptions No connection Ordering Information Part Number MAAPSM0008TR MAAPSM0008TR-3000 Package MAAPSM0008 on 7-inch, 1000-piece reel MAAPSM0008 on 13 inch, 3000-piece reel MAAPSM0008 Sample Test Board RFIN V dd RFOUT RF input to the amplifier. DC block on-chip. 50 ohm input. Positive voltage supply to both stages RF output of the amplifier. DC block on-chip. 50 Ohm output. Negative voltage supply to the gates of both stages RF & DC ground MAAPSM0008SMB 11 Pad V gg GND Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1-Watt, 5 GHz Power Amplifier Electrical Specifications: Parameter Frequency Input VSWR Gain P1dB Saturated Power Drain Current at Psat Harmonics 2 3 Thermal resistance Third-Order Intercept Point Stability MAAPSM0008 V 1.1 TC = 40 C, VDD = 7.0 V, I DQ = 360 mA (unless otherwise specified) Units GHz Min. 5.0 1.5:1 dB dBm dBm mA dBc dBc C/W dBm 18.0 29.5 19.5 29.5 30.5 500 -40 -70 31 40 600 Typ. Max. 6.0 2.0:1 Typ. @ V DD + 5 V 1.5:1 19.0 28.0 29.0 500 -40 -70 31 38 Test Conditions F = 5.825 GHz, Pin = +14 dBm F = 5.825 GHz, Pin = 0 dBm F = 5.825 GHz F = 5.825 GHz, Pin = +14 dBm F = 5.825 GHz, Pin = +14 dBm Output Power = 30.5 dBm +3.0 V < V DD < +10.0 V, POUT < +15 dBm, VSWR < 6:1, -25 C < TC < 70 C, RBW = 3 MHz max. hold 1 All spurs < -70 dBc Recommended Operating Conditions Characteristic Drain Voltage Gate Voltage 2 Input Power Gate Current Case Temperature Symbol V DD V GG PIN IGG TC Unit V V dBm mA C Min 4.5 -2.5 Typ 7.0 -2.0 -- Max 8.0 -1.0 15 +4 70 -4 -40 1 25 1. Operation outside of these ranges may reduce product reliability. 2. A 100 E-Series resistor should be used in the gate voltage line. Operating The MAAPSM0008 The MAAPSM0008 is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 5 to 7 V. 3. Adjust VGG to set IDQ, (approximately -2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 1-Watt, 5 GHz Power Amplifier Application Information Sample Board MAAPSM0008 V 1.1 C1 R1 Plated Vias Plated Vias Via s C2 Notes on board design 1. Sample board uses RO4350 er = 3.48 as dielectric for circuit board. Dielectric thickness is not critical but RFin and RFout transmission lines should be 50 ohms (w = 22 mil for thickness = 10 mil). Solder the exposed paddle on the back of the package to the board. Proper attachment of the exposed paddle is essential for RF and DC ground in addition to providing a low thermal resistance. Case temperature (Tc) is measured as shown on the application board drawing on the top circuit board metal as close to the body of the package as possible. The board must provide adequate heat sinking to accommodate the 2.5 W typically dissipated under small signal conditions. Sample board uses vias in the vicinity of the ground pad to provide a suitable heat sink connected to the ground plane of the board as shown above (recommend thetaCA = 5 C/W max). Placement of C1, C2 and R1 are not critical but use of 1206 for the bypass caps (C1 and C2) is critical. 2. 3. 4. 5. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 1-Watt, 5 GHz Power Amplifier Typical Performance Curves Gain Vs. Frequency PIN = + 6 dBm, V DD = 7 V 24 22 MAAPSM0008 V 1.1 Gain Vs. Frequency PIN = + 6 dBm, V DD = 5 V 24 22 GAIN (dB) 18 16 14 12 10 4.0 4.5 5.0 5.5 - 25 deg. C 50 deg. C 70 deg. C GAIN (dB) 20 20 18 16 14 12 10 4.0 4.5 5.0 5.5 - 25 deg. C 50 deg. C 70 deg. C 6.0 6.5 6.0 6.5 FREQUENCY (GHz) FREQUENCY (GHz) Output Power Vs. Frequency PIN = + 12 dBm, V DD = 7 V 32 30 Output Power Vs. Frequency PIN = + 12 dBm, V DD = 5 V 32 Output Power (dBm) 30 28 26 24 4.0 4.5 5.0 5.5 Output Power (dBm) 28 26 24 4.0 4.5 5.0 5.5 - 25 deg. C 50 deg. C 70 deg. C - 25 deg. C 50 deg. C 70 deg. C 6.0 6.5 6.0 6.5 FREQUENCY (GHz) FREQUENCY (GHz) PAE Vs. Frequency PIN = + 12 dBm, V DD = 7 V PAE Vs. Frequency PIN = + 12 dBm, V DD = 5 V 45 40 - 25 deg. C 50 deg. C 70 deg. C 45 40 - 25 deg. C 50 deg. C 70 deg. C PAE (%) 35 30 25 4.0 4.5 5.0 5.5 6.0 6.5 PAE (%) 35 30 25 4.0 4.5 5.0 5.5 6.0 6.5 FREQUENCY (GHz) FREQUENCY (GHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 1-Watt, 5 GHz Power Amplifier Typical Performance Curves Input Return Loss Vs. Frequency PIN = + 12 dBm, V DD = 7 V -3 -6 -3 -6 MAAPSM0008 V 1.1 Input Return Loss Vs. Frequency PIN = + 12 dBm, V DD = 5 V RETURN LOSS (dB) -9 -12 -15 -18 -21 -24 -27 4.0 4.5 5.0 5.5 6.0 6.5 - 25 deg. C 50 deg. C 70 deg. C RETURN LOSS (dB) -9 -12 -15 -18 -21 -24 -27 4.0 4.5 5.0 5.5 6.0 6.5 - 25 deg. C 50 deg. C 70 deg. C FREQUENCY (GHz) FREQUENCY (GHz) Dissipated Power vs. Case Temperature Temperature (Tc) PDiss vs Channel 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 Tc (C) 35 Output Power & Gain Vs. Input Power Freq = 5.80 GHz, V DD = 7 V Pout (dBm), Gain (dB) 30 Pout Gain PDiss (W) 25 20 15 1 3 5 7 9 11 13 15 Pin (dBm) 1-dB Compression Vs. Frequency V DD = 7 V, IDq = 0.360 A P1dB, Gain Vs. Quiescent Bias V DD = 7 V, Freq = 5.8 GHz 32 32 30 Gain (dB), P1dB (dBm) 30 28 26 24 22 20 18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 P1dB Gain P1dB (dBm) 28 P1dB 26 24 5.0 5.2 5.4 5.6 5.8 6.0 Pin (dBm) IDQ (A) Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 1-Watt, 5 GHz Power Amplifier 4-mm FQFP-N, 16-Lead (MLP) Package, Saw Singulated D 1 6 1 MAAPSM0008 V 1.1 A A2 A1 Dim Measurement (mm) Min. 0.80 0 0.80 0.23 2.05 2.05 0.45 typ. Nom. 0.90 0.02 0.88 0.30 4.00 basic 2.15 0.65 basic 4.00 basic 2.15 0.55 typ. 2.25 0.65 typ. Max. 1.00 0.05 1.00 0.38 2.25 A A1 A2 b D D2 E 2 3 4 16 x b e 3xe PIN #1 IDENTIFIER D2 e E E2 L E2 Note: See JEDEC MO-220A VGGC Issue B for additional dimensional and tolerance information. L e 3xe Handling Procedures Please observe the following precautions to avoid damage to the MAAPSM0008: Absolute Maximum Ratings 1 Parameter Max Input Power (5 - 6 GHz) Operating Voltages Operating Temperature Channel Temperature Storage Temperature Absolute Maximum + 15 dBm +10 volts -40 C to +70 C +150 C -40 C to +150 C Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling t hese devices. 1. Exceeding any one or combination of these limits may cause permanent damage. Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 6 |
Price & Availability of MAAPSM0008TR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |