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| NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE(sat) = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required Absolute Maximum Ratings: (Note 1) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Power Dissipation (TC = +50C, VCE = 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Lead Temperature (During Soldering, 60sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300C Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may be impaired. Note 2. This rating refers to a high current point where collector-emitter voltage is lowest. Electrical Characteistics: (TC = +25C unless otherwise specified) Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Pulse Current Gain (Note 3) Symbol Test Conditions Min 80 100 6 50 70 35 45 Typ - - - 95 108 51 91 Max - - - - 200 - - Unit V V V VCEO(sus) IC = 200mA, IB = 0, Notes 2 & 3 V(BR)CES) IC = 1mA, VBE = 0 V(BR)EBO IE = 1mA, IC = 0 hFE IC = 100mA, VCE = 5V IC = 5A, VCE = 5V IC = 5A, VCE = 5V, TC = -55C IC = 10A, VCE = 5V Note 2. This rating refers to a high current point where collector-emitter voltage is lowest. Note 3. Pulse Conditions: Pulse Width = 300s, Duty Cycle = 1%. Electrical Characteistics (Cont'd): (TC = +25C unless otherwise specified) Parameter High Frequency Current Gain Collector-Emitter Saturation Voltage Symbol hfe VCE(sat) VBE(sat) VBE(on) ICES ICEX IEBO Ccb Test Conditions IC = 2A, VCE = 5V, f = 20MHz IC = 5A, IB = 0.5A, Note 3 IC = 10A, IB = 1A, Note 3 Base-Emitter Saturation Voltage IC = 5A, IB = 0.5A, Note 3 IC = 10A, IB = 1A, Note 3 Base-Emitter ON Voltage Collector Cutoff Current Collector Reverse Current Emitter Cutoff Current Collector-Base Capacitance IC = 5A, VCE = 5V, Note 3 VCE = 60V, VBE = 0 VCE = 60V, VEB = 2V, TC = +150C VEB = 5V, IC = 0 VCB = 10V, IE = 0, f = 1MHz Min 2.0 - - - - - - - - - Typ 2.8 0.55 1.1 1.2 1.7 - 0.014 - - 235 Max - 0.9 1.5 1.8 2.2 1.8 1.0 500 1.0 275 V V V V V A A A pF Unit Note 3. Pulse Conditions: Pulse Width = 300s, Duty Cycle = 1%. Base .400 (10.16) .682 (17.32) Emitter .600 (19.15) Dia Collector/ Isolated Stud .061 (1.53) Dia .755 (19.15) .412 (10.44) .090 (2.28) Max 1/4-28 UNF-2A .115 (2.93) .440 (11.17) |
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