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| Datasheet File OCR Text: |
| N-Channel JFET High Frequency Amplifier CORPORATION U308 - U310 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. * High Power Gain * Low Noise Greater The * Dynamic Rangeto 75 Input 100dB * Easily Matched PIN CONFIGURATION (TO-52) ORDERING INFORMATION Part U308-10 XU308-10 D S Package Hermetic TO-52 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC G, C 5021 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER U308 U309 U310 UNITS -150 -150 -25 -4.0 30 1.0 10 250 2.5 5.0 10 10 17 250 2.5 5.0 10 10 17 250 2.5 5.0 nV Hz -2.5 24 -6.0 60 1.0 mA V mS S pF pA nA V TEST CONDITIONS VGS = -15V VGS = 0 TA = 125oC MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS BVGSS VGS(off) IDSS VGS(f) gfg gogs Cgd Cgs en Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Current (Note 1) Gate-Source Forward Voltage Common-Gate Forward Transconductance (Note 1) Common Gate Output Conductance Drain-Gate Capacitance Gate-Source Capacitance Equivalent Short Circuit Input Noise Voltage 10 17 -25 -1.0 12 -6.0 60 1.0 -150 -150 -25 -1.0 12 -150 -150 IG = -1A, VDS = 0 VDS = 10V, ID = 1nA VDS = 10V, VGS = 0 IG = 10mA, VDS = 0 VDS = 10V, ID = 10mA VGS = -10V, VDS = 10V VDS = 10V, ID = 10mA f = 1kHz f = 1MHz (Note 2) f = 100Hz (Note 2) U308 - U310 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL PARAMETER Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gain 14 10 NF Noise Figure U308 U309 U310 UNITS TEST CONDITIONS f = 100MHz S VDS = 10V, ID = 10mA (Note 2) f = 450MHz f = 100MHz f = 450MHz f = 100MHz dB 2.0 3.5 f = 450MHz f = 100MHz f = 450MHz MIN TYP MAX MIN TYP MAX MIN TYP MAX gfg 15 14 0.18 0.32 16 11 1.5 2.7 NOTES: 1. Pulse test duration = 2ms. 2. For design reference only, not 100% tested. 2.0 3.5 14 10 15 14 0.18 0.32 16 11 1.5 2.7 2.0 3.5 14 10 15 14 0.18 0.32 16 11 1.5 2.7 gogs Gpg |
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