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Silicon Schottky Diode BAS 140W q q q q General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code (tape and reel) Q62702-A1071 Pin Configuration 1 2 A C Marking Package BAS 140W 4 SOD-323 Maximum Ratings Parameter Reverse voltage Forward current Surge forward current, t 10 ms Total power dissipation TS 113 C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 40 120 200 250 - 55 ... + 125 - 55 ... + 150 Unit V mA mA mW C C VR IF IFSM Ptot Top Tstg Rth JA Rth JS 260 150 K/W K/W 1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 05.95 BAS 140W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance Value typ. max. Unit V(BR) 40 - 310 450 720 - - 3 10 2 - V mV 250 350 600 380 500 1000 A - - 1 10 pF - 5 - - - nH - VF IR CT RF LS VR = 0 V, f = 1 MHz Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance Semiconductor Group 2 BAS 140W Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) Differential forward resistance RF = f (IF) Semiconductor Group 3 BAS 140W Forward current IF = f (TA*, TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load IFmax / IFDC = f (tp) Semiconductor Group 4 |
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