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| BFP 136W NPN Silicon RF Transistor * For power amplifier in DECT and PCN systems * fT = 5.5GHz * Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 136W PAs Q62702-F1575 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 150 20 mW 1000 150 - 65 ... + 150 - 65 ... + 150 90 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 60 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 50 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 80 mA, VCE = 5 V Semiconductor Group 2 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4 5.5 1.7 0.7 6.8 - GHz pF 2.5 dB 2 3.3 - IC = 80 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 30 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 80 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 9 3 dBm 33 15.5 9.5 - IC = 80 mA, VCE = 5 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz Third order intersept point IP3 IC = 80 mA, VCE = 5 V, f = 1.8 MHz ZS = ZSopt, ZL = ZLopt 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Jan-20-1997 BFP 136W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.5813 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 12.331 1.4254 31.901 1.8821 1.0078 33.904 20.691 4.5579 1.1381 1.0033 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 113.32 1.4907 86.717 0 0.22081 0.71518 0.31338 0 0.31461 0 0 0.99886 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0653 46.37 1.8047 0.83992 0.01636 0.36824 0.10174 2977.4 0.02899 0.75 1.11 300 fA mA V fF V eV K 0.033605 A 0.0080864 fA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.5 0.51 0.18 0.14 0.05 0.35 78 48 244 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Jan-20-1997 BFP 136W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 1200 mW 1000 Ptot 900 800 700 600 TS TA 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Jan-20-1997 BFP 136W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 3.0 7.0 GHz pF 6.0 8V Ccb 2.0 fT 5V 3V 2V 5.5 5.0 4.5 4.0 1V 1.5 3.5 3.0 0.7V 1.0 2.5 2.0 1.5 0.5 1.0 0.5 0.0 0 2 4 6 8 V VR 11 0 20 40 60 80 100 120 140 mA 170 IC 0.0 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 dB 10V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 12 dB 10 3V 2V G 14 12 G 9 8 10V 3V 2V 1V 10 8 6 4 2 0 0 20 40 60 80 100 120 140 mA 170 IC 0.7V 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 mA 170 IC 0.7V 1V Semiconductor Group 6 Jan-20-1997 BFP 136W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 18 VCE = Parameter, f = 900MHz 40 IC=80mA dB 0.9GHz dBm 8V 5V G 14 12 10 8 6 4 1.8GHz 0.9GHz IP3 30 3V 25 2V 20 1V 15 2 0 0 2 4 6 8 V 12 10 0 20 40 60 80 100 120 V CE mA IC 160 Power Gain Gma, Gms = f(f) VCE = Parameter 34 dB Power Gain |S21|2= f(f) VCE = Parameter 30 IC=80mA dB 24 IC=80mA G 28 24 20 G 20 16 12 16 8 12 4 8 4 0 0.0 10V 1V 0.7V 0 -4 -8 0.0 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Jan-20-1997 |
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