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| SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATURES * 60Volt VDS * RDS(ON) = 5 BS170F S D G PARTMARKING DETAIL - MV SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 0.15 3 20 330 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Turn-On Delay Time (2)(3) Turn-Off Delay Time (2)(3) SYMBOL BV DSS V GS(th) I GSS I DSS R DS(on) g fs C iss t d(on) t d(off) 200 60 10 10 MIN. TYP. MAX. UNIT CONDITIONS. 60 0.8 90 3 10 0.5 5 V V nA A mS pF ns ns I D =100A, V GS=0V I D =1mA, V DS= V GS V GS =15V, V DS =0V V DS=25V, V GS=0V V GS=10V, I D=200mA V DS=10V, I D=200mA VDS=10V, VGS =0V, f=1MHz V DD -15V, I D=600mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device For typical characteristics graphs refer to ZVN3306F datasheet. 3 - 54 |
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