View IRFP150V_499650.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 94459A
IRFP150V
HEXFET(R) Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 100V RDS(on) = 24m
G S
ID = 47A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 packcage because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
46 32 230 140 0.91 20 28 20 5.8 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
1.1 --- 40
Units
C/W
www.irf.com
1
02/03/03
IRFP150V
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy
Min. 100 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 24 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3130 --- VGS = 0V 410 --- VDS = 25V 72 --- pF = 1.0MHz, See Fig. 5 1060280 mJ IAS = 28A, L = 0.70mH
Typ. --- 0.13 --- --- --- --- --- --- --- --- --- --- 12 58 45 47
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 47 --- --- showing the A G integral reverse --- --- 230 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 28A, VGS = 0V --- 140 220 ns TJ = 25C, IF = 28A --- 670 1010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.70mH, RG = 25, IAS = 28A, V GS=10V (See Figure 12). ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C.
Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175C .
2
www.irf.com
IRFP150V
1000
TOP VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V 3.5V
1000
TOP VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V 3.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
3.5V
1
3.5V
1
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100 0.1 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 57A
ID, Drain-to-Source Current ( )
2.5
T J = 175C
10.00
R DS(on) , Drain-to-Source On Resistance
100.00
2.0
(Normalized)
1.5
T J = 25C
1.00
1.0
0.5
0.10 3.0 4.0 5.0
VDS = 15V 20s PULSE WIDTH
6.0 7.0 8.0 9.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFP150V
100000
12
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd
VGS , Gate-to-Source Voltage (V)
ID = 28A
10000
Coss = C + Cgd ds
10
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance(pF)
Ciss
1000
7
Coss
5
100
Crss
2
10 1 10 100
0 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.00
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
100.00 TJ = 175C 10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100 100sec 10 1msec
1.00
T J = 25C
1 Tc = 25C Tj = 175C Single Pulse 1 10
10msec
VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFP150V
50
VDS
40
RD
VGS RG
D.U.T.
+
-VDD
I D , Drain Current (A)
30
V GS
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
(Z thJC )
1 D = 0.50
Thermal Response
0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1
J = P DM x Z thJC
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFP150V
550
15V
ID TOP 11A 20A 28A
RG
20V VGS
D.U.T
IAS tp
+ V - DD
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
440
BOTTOM
330
A
0.01
220
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
110
0 25 50 75 100 125 150 175
Starting T , Junction Temperature J
( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRFP150V
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs
www.irf.com
7
IRFP150V
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
15.90 (.626) 15.30 (.602) -B-
3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217)
-D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4
20.30 (.800) 19.70 (.775) 1 2 3
2X
5.50 (.217) 4.50 (.177)
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC.
-C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145)
2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X
1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS
0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087)
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
TO-247 package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/03
8
www.irf.com

▲Up To Search▲

Price & Availability of IRFP150V

	To Download IRFP150V Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .