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HiPerFASTTM IGBT with Diode
Combi Pack
IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE(sat) tfi
= 600 V = 48 A = 2.7 V = 275 ns
Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ T JM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
l
TO-247 SMD (24N60AU1S)
G E
C (TAB)
TO-247 AD (24N60AU1)
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD TO-247 SMD TO-247 AD
1.13/10 Nm/lb.in. 4 6 g g
Features International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
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Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 500 8 100 2.7 V V A mA nA V
BV CES V GE(th) I CES I GES V CE(sat)
IC IC
= 750 A, VGE = 0 V = 250 A, VCE = VGE
Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
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VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90 , VGE = 15 V
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l
Advantages Space savings (two devices in one package) Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) Reduces assembly time and cost
92717H (3/97)
(c)1997 IXYS Corporation. All rights reserved.
IXGH24N60AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 13 1500 175 40 90 11 30 25 15 0.6 150 110 1.5 25 15 0.8 250 400 2.3 120 15 40 S
IXGH24N60AU1S
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VCE = 25 V, VGE = 0 V, f = 1 MHz
P
pF pF pF nC nC nC
Dim.
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
e
200 270
ns ns mJ ns ns mJ ns ns mJ ns ns mJ
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
0.83 K/W K/W
TO-247 SMD Outline
Reverse Diode (FRED) Symbol VF I RM trr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.6 10 150 35 15 50 V A ns ns
1. Gate 2. Collector 3. Emitter 4. Collector
IF = IC90, VGE = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IC90 , VGE = 0 V, -diF /dt = 240 A/s VR = 360 V TJ = 125C IF = 1 A; -di/dt = 100 A/s; VR = 30 VTJ = 25C
1 K/W Min. Recommended Footprint (Dimensions in inches and (mm))
Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXGH24N60AU1
IXGH24N60AU1S
Fig. 1 Saturation Characteristics
40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7
25 0
7V T J = 25C V GE = 15V 13V 11V 9V
Fig. 2 Output Characterstics
150
T J = 25C
125
VGE = 15V 13V
IC - Amperes
IC - Amperes
100
11V
75 50
9V 7V
0
2
4
6
8
10 12
14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
T J = 25C
Fig. 4 Temperature Dependence of Output Saturation Voltage
1.6
VGE = 15V IC = 40A
1.4
VCE(sat) - Normalized
VCE - Volts
1.2 1.0 0.8 0.6 0.4
IC = 20A
6 5 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15
IC = 40A IC = 20A
IC = 10A
IC = 10A
-50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig. 5 Input Admittance
40
VCE = 10V
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGE(th) IC = 250A
30
BV / VGE(th) - Normalized
35
1.1 1.0 0.9 0.8 0.7 0.6 -50
BVCES
IC - Amperes
25 20 15 10 5 0 3 4 5 6 7 8 9 10
TJ = 125C T J = - 40C T J = 25C
IC = 250A
-25
0
25
50
75
100 125 150
VGE - Volts
G20N60p1.JNB
TJ - Degrees C
(c)1997 IXYS Corporation. All rights reserved.
IXGH24N60AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
500 400
tfi - nanoseconds
T J = 125C RG = 10
IXGH24N60AU1S
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
5 500 400
tfi - nanoseconds Eoff - millijoules
TJ = 125C IC = 24A Eoff
5 4 3
tfi
Eoff
4 3
300
tfi
300 200 100 0
0 20 40 60 80 100
200 100 0
0 10 20 30 40 50
2 1 0
IC - Amperes
2 1 0
120
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
IC = 24A
Fig.10 Turn-Off Safe Operating Area
100
12
V CE = 300V
10
T J = 125C RG = 10 dV/dt < 3V/ns
9 6 3 0
IC - Amperes
VGE - Volts
1
0.1
0.01 0 25 50 75 100
G24N60P2.JNB
0
100
200
300
400
500
600
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5 D=0.2
Zthjc (K/W)
D=0.1
D = Duty Cycle
0.1 D=0.05
D=0.02 D=0.01 Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
Eoff - millijoules
IXGH24N60AU1
IXGH24N60AU1S
Fig.12 Maximum Forward Voltage Drop
100 80 25 20
Fig.13 Peak Forward Voltage V FR and Forward Recovery Time tFR
TJ = 125C IF = 37A
1000 800
VFR
Current - Amperes
60 40 20 0 0.5
TJ = 100C
15 10 5
tfr
600 400 200 0 600
TJ = 25C
0 1.0 1.5 2.0 2.5 0 100 200 300 400 500
Voltage Drop - Volts
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
1.4 1.2 1.0 0.8
IRM
Fig.15 Reverse Recovery Chargee
4
TJ = 100C VR = 350V IF = 30A
max.
Qr - nanocoulombs
Normalized IRM /Qr
3
2
typ. IF = 60A IF = 30A IF = 15A
0.6 0.4 0.2 0.0 0
Qr
1
0 40 80 120 160 1 10 100 1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
40
TJ = 100C VR = 350V IF = 30A
max.
Fig.17 Reverse Recovery Time
0.8
IF = 30A
max.
TJ = 100C VR = 350V
trr - nanoseconds
30
0.6
typ. IF = 60A
IRM - Amperes
typ. IF = 60A
20
IF = 30A IF = 15A
0.4
IF = 30A IF = 15A
10
0.2
0 200 400 600
0.0 0 200 400 600
diF /dt - A/s
diF /dt - A/s
(c)1997 IXYS Corporation. All rights reserved.
tfr - nanoseconds
TJ = 150C
VFR - Volts
IXGH24N60AU1
IXGH24N60AU1S
Fig.17 Diode Transient Thermal resistance junction to case
1.00
RthJC - K/W
0.10
0.01 0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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