|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AC L B C K D A 1 2 Dim M Min 14.22 9.65 2.54 5.84 3/4 12.70 0.51 3.53AE 3.56 1.14 0.30 2.03 4.83 Max 15.88 10.67 3.43 6.86 6.35 14.73 1.14 4.09AE 4.83 1.40 0.64 2.92 5.33 A B C D E G J E J R Pin 1 Pin 2 Mechanical Data * * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number N G K L M P Case N P R All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 125C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Repetitive Peak Reverse Surge Current Forward Voltage Drop @ t 2.0ms @ IF = 8.0A, TC = 125C @ IF = 8.0A, TC = 25C @ IF = 16A, TC = 25C @ TC = 25C @ TC = 125C Symbol VRRM VRWM VR VR(RMS) IO IFSM IRRM VFM IRM Cj RqJC dV/dt Tj, TSTG MBR 830 30 21 @ TA = 25C unless otherwise specified MBR 835 35 24.5 MBR 840 40 28 8.0 150 1.0 0.57 0.70 0.84 0.1 15 250 3.0 1000 MBR 845 45 31.5 MBR 850 50 35 MBR 860 60 42 Unit V V A A A 0.70 0.80 0.95 V Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) mA pF K/W V/ms C Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range -65 to +150 Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30030 Rev. B-4 1 of 2 MBR830-MBR860 8 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100 I(AV), AVERAGE FWD CURRENT (A) MBR830 - MBR845 10 6 4 MBR850 / MBR860 1.0 2 0 0.1 0 0.4 0.8 Tj = 25C Pulse Width = 300s 2% Duty Cycle 0 50 100 150 1.2 1.6 TC, CASE TEMPERATURE (C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 IFSM, PEAK FORWARD SURGE CURRENT (A) 300 250 200 150 Cj, JUNCTION CAPACITANCE (pF) 100 100 50 0 10 Tj = 25C f = 1.0MHz 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance DS30030 Rev. B-4 2 of 2 MBR830-MBR860 |
Price & Availability of MBR835 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |