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| QS6M4 Transistors Small switching QS6M4 Features 1) The QS6M4 combines Pch Trench MOSFET with a Nch Trench MOSFET in a single TSMT6 package. 2) Pch Trench MOSFET and Nch Trench MOSFET have a low on-state resistance with a fast switching. 3) Pch Trench MOSFET is neucted a low voltage drive (2.5V). External dimensions (Unit : mm) TSMT6 1pin mark (1) 2.8 1.6 (6) 0.4 (3) 0.16 (4) Applications Load switch, inverter Each lead has same dimensions Abbreviated symbol : M04 Structure Silicon P-channel MOS FET Silicon N-channel MOS FET Equivalent circuit (6) (5) 1 (4) 0.85 2.9 (2) (5) Packaging specifications Package Type QS6M4 Code Basic ordering unit (pieces) Taping TR 3000 2 2 1 (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature Pw10s, Duty cycle1% Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Continuous Pulsed Continuous Pulsed Limits Nchannel Pchannel 30 -20 12 -12 1.5 1.5 6.0 6.0 0.8 -0.75 6.0 -6.0 1.25 150 -55 to +150 Unit V V A A A A W C C Thermal resistance (Ta=25C) Parameter Channel to ambient Symbol Rth (ch-a) Limits 100 Unit C / W 1/5 QS6M4 Transistors N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. - 30 - 0.5 - - - 1.0 - - - - - - - - - - Typ. - - - - 170 180 260 - 80 25 15 7 18 15 15 1.6 0.5 0.9 Max. 10 - 1 1.5 230 245 360 - - - - - - - - - - - Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V / VDS=0V ID=1mA / VGS=0V VDS=30V / VGS=0V VDS=10V / ID=1mA ID=1.5A / VGS=4.5V ID=1.5A / VGS=4.0V ID=1.0A / VGS=2.5V VDS=10V / ID=1.0A VDS=10V VGS=0V f=1MHz ID=1A, VDD 15V VGS=4.5V RL=15 / RG=10 VDD 15V VGS=4.5V ID=1.5A RL=10 RG=10 IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Body diode characteristics (Source-Drain) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS=3.2A / VGS=0V 2/5 QS6M4 Transistors P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -0.7 - Static drain-source on-state - RDS (on) resistance - Yfs 1.0 Forward transfer admittance - Input capacitance Ciss Output capacitance - Coss Reverse transfer capacitance - Crss Turn-on delay time td (on) - Rise time - tr Turn-off delay time - td (off) Fall time - tf Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge - Qgd Pulsed Typ. - - - - 155 170 310 - 270 40 35 10 12 45 20 3.0 0.8 0.85 Max. -10 - -1 -2.0 215 235 430 - - - - - - - - - - - Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= -12V / VDS=0V ID= -1mA / VGS=0V VDS= -20V / VGS=0V VDS= -10V / ID=-1mA ID= -1.5A / VGS= -4.5V ID= -1.5A / VGS= -4.0V ID= -0.75A / VGS= -2.5V VDS= -10V / ID= -0.75A VDS= -10V VGS=0V f=1MHz ID= -0.75A, VDD -15V VGS= -4.5V RL=20 / RG=10 VDD -15V RL=10 VGS= -4.5V RG=10 ID= -1.5A Body diode characteristics (Source-Drain) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS= -0.75A / VGS=0V 3/5 QS6M4 Transistors N-ch Electrical characteristic curves 1000 100 Crss Coss Ciss SWITCHING TIME : t (ns) CAPACITANCE : C (pF) tf 100 td (off) 10 GATE-SOURCE VOLTAGE : VGS (V) Ta=25C f=1MHz VGS=0V 1000 Ta=25C VDD=15V VGS=4.5V RG=10 Pulsed 6 Ta=25C VDD=15V 5 ID=1.5A RG=10 Pulsed 4 3 2 1 0 10 td (on) tr 1 0.01 0.1 1 10 100 1 0.01 0.1 1 10 0 0.5 1.0 1.5 2.0 DRAIN-SOURCE VOLTAGE : VDS (A) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 VDS=10V Pulsed 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 ID=1.5A ID=0.75A 10 Ta=25C Pulsed VGS=0V Pulsed SOURCE CURRENT : Is (A) DRAIN CURRENT : ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VGS=4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 10 VGS=4.0V Pulsed 10 VGS=2.5V Pulsed 1 Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () 4/5 QS6M4 Transistors P-ch Electrical characteristic curves 1000 GATE-SOURCE VOLTAGE : -VGS (V) Ta=25C f=1MHz VGS=0V Ciss 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) tf 100 Ta=25C VDD= -15V VGS= -4.5V RG=10 Pulsed 8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 Ta=25C VDD= -15V ID= -1.5A RG=10 Pulsed 100 td (off) td (on) tr 10 Coss Crss 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) 2.5 3.0 3.5 TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 400 1 0.1 Ta=125C Ta=75C Ta=25C Ta= -25C ID= -1.5A ID= -0.75A SOURCE CURRENT : -IS (A) VDS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 500 Ta=25C Pulsed 10 DRAIN CURRENT : -ID (A) Ta=25C VGS=0V Pulsed 1 300 200 0.1 0.01 100 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 0 2 4 6 8 10 12 GATE-SOURCE VOLTAGE : -VGS (V) GATE-SOURCE VOLTAGE : -VGS (V) 0.01 0.0 0.5 1.0 1.5 2.0 SOURCE-DRAIN VOLTAGE : -VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10000 VGS= -4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10000 VGS= -4V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS= -2.5V Pulsed 1000 1000 1000 100 100 100 10 0.1 1 10 10 0.1 1 10 10 0.1 1 10 DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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