 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SFH620A 5.3 kV TRIOS(R) OPTOCOUPLER AC VOLTAGE INPUT FEATURES * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 45% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward Current * Isolation Test Voltage, 5300 VACRMS * High Collector-Emitter Voltage, VCEO=70 V * Low Saturation Voltage * Fast Switching Times * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100"(2.54 mm) Spacing * High Common-Mode Interference Immunity (Unconnected Base) * Underwriters Lab File #52744 * VDE 0884 Available with Option 1 * SMD Option, See SFH6206 Data Sheet DESCRIPTION The SFH620A features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Maximum Ratings Emitter Reverse Voltage ................................................................... 6 V DC Forward Current ..................................................... 60 mA Surge Forward Current (tP10 s) .................................. 2.5 A Total Power Dissipation ................................................ 100 mW Detector Collector-Emitter Voltage ................................................... 70 V Emitter-Collector Voltage ...................................................... 7 V Collector Current .............................................................50 mA Collector Current (tP1 ms) ...........................................100 mA Total Power Dissipation ................................................ 150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ................................................. 5300 VACRMS Creepage........................................................................ 7 mm Clearance ....................................................................... 7 mm Insulation Thickness between Emitter and Detector ... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 .................................. 175 Isolation Resistance VIO=500 V, TA=25C.................................................. 1012 VIO=500 V, TA=100C................................................ 1011 Storage Temperature Range .............................. -55 to +150C Ambient Temperature Range.............................. -55 to +100C Junction Temperature ...................................................... 100C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane 1.5 mm) ........................... 260C Package Dimensions in Inches (mm) 2 1 Pin One I.D. Anode/ Cathode 1 Cathode/ Anode 2 .268 (6.81) .255 (6.48) 4 3 Collector Emitter 3 4 .190 (4.83) .179 (4.55) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .135 (3.43) .115 (2.92) 4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) 3-9 1.00 (2.54) Typ. 10 Typ. .305 (7.75) .012 (.30) .008 (.20) 5-252 Characteristics (TA=25C) Description Emitter Symbol Unit Condition Forward Voltage Capacitance Thermal Resistance Detector Capacitance Thermal Resistance Package VF C0 RthJA CCE RthJA 1.25 (1.65) 50 750 V pF K/W IF= 60 mA VR=0 V, f=1 MHz 6.8 500 pF K/W VCE=5 V, f=1 MHz Collector-Emitter Saturation Voltage Coupling Capacitance VCESAT CC 0.25 (0.4) 0.2 V pF IF=10 mA, IC=2.5 mA Note: 1. Still air, coupler soldered to PCB or base. Current Transfer Ration (IC/IF at VCE=5 V) and Collector-Emitter Leakage Current by Dash Number Description -1 -2 -3 IC/ IF (IF= 10 mA) IC/ IF (IF= 1 mA) Collector-Emitter Leakage Current, ICEO VCE=10 V 40-125 30 (>13) 2 (50) 63-200 45 (>22) 2 (50) 100-320 70 (>34) 5 (100) % % nA Switching Times Linear Operation (without saturation) IF RL=75 IC VCC=5 V 47 IF=10 mA, VCC=5 V, TA=25C Load Resistance Turn-on Time Rise Time Turn-off Time Fall Time Cut-off Frequency RL tON tR tOFF tF FCO 75 3.0 2.0 2.3 2.0 250 s s s s kHz SFH620A 5-253 Figure 1. Current transfer ratio (typ.) vs. temperature IF=10 mA, VCE=0.5 V Figure 2. Output characteristics (typ.) Collector current vs. collector-emitter voltage TA=25C Figure 3. Diode forward voltage (typ.) vs. forward current Figure 4. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25C, f=1 MHz 20 pF 15 Figure 5. Permissiable pulse handling capability. Fwd. current vs. pulse width Pulse cycle D=parameter, TA=25C Figure 6. Permissible power dissipation vs. ambient temp. C 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 7. Permissible diode forward current vs. ambient temp. SFH620A 5-254 |
Price & Availability of SFH620A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |