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| Philips Semiconductors Product specification Rectifier diodes ultrafast FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance BYV29 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V k 1 a 2 VF 1.03 V IF(AV) = 9 A trr 60 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV29 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage square wave; = 0.5; Tmb 123 C Repetitive peak forward current t = 25 s; = 0.5; Tmb 123 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; with reapplied VRRM(max) Storage temperature Operating junction temperature Average forward current1 CONDITIONS BYV29 -40 MIN. -300 300 300 300 MAX. -400 400 400 400 9 18 100 110 150 150 -500 500 500 500 UNIT V V V A A A A C C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 2.5 UNIT K/W K/W 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 8 A IF = 20 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s MIN. - BYV29 series TYP. 0.90 1.05 1.20 2.0 0.1 40 50 4.0 2.5 MAX. 1.03 1.25 1.40 50 0.35 60 60 5.5 - UNIT V V V A mA nC ns A V I dI F dt F 15 PF / W Vo = 0.8900 V Rs = 0.0190 Ohms BYV29 Tmb(max) / C D = 1.0 112.5 t 0.5 rr time 10 0.2 0.1 5 tp T t 125 Q I R I s 10% 100% I tp 137.5 D= rrm T 0 0 5 IF(AV) / A 10 150 15 Fig.1. Definition of trr, Qs and Irrm Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x D. BYV29 Tmb(max) / C 120 a = 1.57 1.9 2.2 8 2.8 4 6 4 135 140 145 150 10 130 125 I F 12 10 PF / W Vo = 0.89V Rs = 0.019 Ohms time VF V VF time fr 2 0 0 2 4 IF(AV) / A 6 8 Fig.2. Definition of Vfr Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). September 1998 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV29 series 1000 trr / ns 30 IF / A Tj=150 C BYW29 IF=10 A 100 1A 20 Tj=25 C typ max 10 Tj = 25 C Tj = 100C 1 1 10 dIF/dt (A/us) 100 10 0 0 0.5 1 VF / V 1.5 2 Fig.5. Maximum trr at Tj = 25C and 100C Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Qs / nC 10 Irrm / A IF=10A 1000 1 IF=1A 100 IF = 10 A 2A 0.1 10 0.01 1 Tj = 25 C Tj = 100C 10 -dIF/dt (A/us) 100 1 1.0 10 -dIF/dt (A/us) 100 Fig.6. Maximum Irrm at Tj = 25C and 100C. Fig.8. Maximum Qs at Tj = 25C 10 Transient thermal impedance, Zth j-mb (K/W) 1 0.1 0.01 P D tp D= tp T t 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.9. Transient thermal impedance Zth j-mb= f(tp) September 1998 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV29 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV29 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 5 Rev 1.300 |
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