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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)
SSH7N80A
BVDSS = 800 V RDS(on) = 1.8 ID = 7 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Value 800 7 4.4
1 O
Units V A A V mJ A mJ V/ns W W/ C
28 + 30 _ 523 7 20 2.0 200 1.59 - 55 to +150
O 1 O 1 O 3 O
2
C
300
Thermal Resistance
Symbol R R R
JC CS JA
Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient
Typ. -0.24 --
Max. 0.63 -40
Units
C/W
Rev. B
(c)1999 Fairchild Semiconductor Corporation
SSH7N80A
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units 800 -2.0 -----------------0.93 ------4.95 140 57 23 40 92 34 67 11.2 29.6 --3.5 100 -100 25 250 1.8 -165 66 55 90 195 80 88 --nC ns A pF V V/ C V nA
Test Condition VGS=0V,ID=250A ID=250A VGS=30V VGS=-30V VDS=800V VDS=640V,TC=125 C VGS=10V,ID=0.85A VDS=50V,ID=0.85A
4 O* 4 O
See Fig 7
VDS=5V,ID=250A
1500 1950
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, RG=16 See Fig 13
45 OO
VDS=640V,VGS=10V, ID=2A See Fig 6 & Fig 12
45 OO
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O 4 O
Min. Typ. Max. Units --------520 6.66 7 28 1.4 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=7A,VGS=0V TJ=25 C,IF=7A diF/dt=100A/s
4 O

Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=20mH, I =7A, V =50V, R =27, Starting T =25 C O AS DD G J 3 _ _ _ O ISD < 7A, di/dt <150A/ s, VDD
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
[A]
Top : 1 10 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V
SSH7N80A
Fig 2. Transfer Characteristics
[A]
1 10
VGS
ID , Drain Current
0 10
ID , Drain Current
0 10
150 oC 25 oC @ Notes : 1. V = 0 V GS 2. V = 50 V DS - 55 oC 3. 250s Pulse Test 8 10
-1 10
@ Notes : 1. 250s Pulse Test 2. T = 25 oC C
0 10 1 10
-1 10
-1 10
2
4
6
VDS , Drain-Source Voltage [V] [A]
VGS , Gate-Source Voltage [V]
RDS(on) , [ ] Drain-Source On-Resistance
Fig 3. On-Resistance vs. Drain Current
5
Fig 4. Source-Drain Diode Forward Voltage
IDR , Reverse Drain Current
4 V = 10 V GS 3
11 0
2 V = 20 V GS 1 @ N t : T = 25 oC oe J 0 0 5 10 15 20 25
10 0
1 0 oC 5 2 oC 5 1 -1 0 02 . 04 . 06 . 08 .
@Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 10 . 12 . 14 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
C = C + C ( C = s o t d) iss gs gd ds h r e C =C +C oss ds gd 20 00 C iss 10 50 C =C rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
20 50
[pF]
VGS , Gate-Source Voltage
1 0
6 V =10V DS V =40V 0 DS V =60V 4 DS
Capacitance
10 00 @Nts: oe 1 V =0V . GS 2 f=1Mz . H
5
50 0
C oss C rss
@Nts:I =70A oe . D 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0
00 1 0
1 10
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
SSH7N80A
BVDSS , (Normalized) Drain-Source Breakdown Voltage
1.2
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
3.0
RDS(on) , (Normalized) Drain-Source On-Resistance
Fig 7. Breakdown Voltage vs. Temperature
2.5
1.1
2.0
1.0
1.5
1.0 @ Notes : 1. V = 10 V GS 2. I = 3.5 A D 0.0 -75
0.9
@ Notes : 1. V = 0 V GS 2. I = 250 A D
0.5
0.8 -75
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
o TJ , Junction Temperature [ C]
o TJ , Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
[A]
10
2
Fig 10. Max. Drain Current vs. Case Temperature
[A]
10 s 8
Operation in This Area is Limited by R DS(on)
ID , Drain Current
ID , Drain Current
6
1 10
100 s 1 ms 10 ms DC
4
0 10
-1 10
@ Notes : 1. T = 25 oC C 2. T = 150 C J 3. Single Pulse
o
2
-2 10
1 10
2 10
3 10
0 25
50
75
100
125
150
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
100
Thermal Response
D=0.5
0.2 10- 1 0.1 0.05 0.02 0.01 10- 2 single pulse
@ Notes : 1. Z J C (t)=0.63 o C/W Max. 2. Duty Factor, D=t/t2 1 3. TJ M -TC =PD M *Z J C (t)
Z (t) ,
PDM t1 t2
JC
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t 1 , Square Wave Pulse Duration
[sec]
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SSH7N80A
* Current Regulator *
50KO 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (I G) Resistor
R2
Current Sampling (I D) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT 10V Vin
10%
Vout VDD
( 0.5 rated V DS )
90%
td(on) t on
tr
td(off) t off
tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
SSH7N80A
N-CHANNEL POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
* dv/dt controlled by "R * G * IS controlled by Duty Factor "D"
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop

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