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| 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 250 220 25 100 30 25 372 20 5 2.02 135 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) < < < < *1 L=0.67mH, Vcc=48V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS<250V *5 VGS=-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=250V VDS=200V VGS=30V ID=12.5A ID=12.5A VDS=75V VGS=0V f=1MHz VGS=0V VGS=0V VDS=0V VGS=10V VDS=25V 8 Tch=25C Tch=125C 10 75 16 2000 220 15 20 30 60 20 44 14 16 25 1.10 0.45 1.5 1.65 Min. 250 3.0 Typ. Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 Units V V A nA m S pF VCC=72V ID=12.5A VGS=10V RGS=10 VCC=72V ID=12A VGS=10V L=100H Tch=25C IF=25A VGS=0V Tch=25C IF=25A VGS=0V -di/dt=100A/s Tch=25C ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 62.0 Units C/W C/W 1 2SK3556-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 100 200 175 ID=f(VDS):80s Pulse test,Tch=25C 20V 80 150 125 10V 8V 7.5V PD [W] ID [A] 60 7.0V 100 75 50 40 6.5V 20 25 6.0V VGS=5.5V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 ID[A] 10 1 gfs [S] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.25 VGS= 5.5V 270 240 6.0V 6.5V 7.0V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V 0.20 210 RDS(on) [ m ] RDS(on) [ ] 7.5V 180 150 max. 0.15 8V 10V 20V 120 90 typ. 0.10 0.05 60 30 0.00 0 20 40 60 80 100 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3556-01L,S,SJ FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 14 12 max. Typical Gate Charge Characteristics VGS=f(Qg):ID=25A, Tch=25C VGS(th) [V] 5.0 4.5 Vcc= 36V 10 96V 72V VGS [V] 75 100 125 150 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 min. 8 6 4 2 0 0 10 20 30 40 50 60 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 10 0 10 C [nF] Coss 10 -1 IF [A] 1 0.1 0.00 Crss 10 -2 10 -1 10 0 10 1 10 2 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=72V, VGS=10V, RG=10 tf 10 2 td(off) t [ns] tr td(on) 10 1 10 0 10 -1 10 0 10 1 10 2 ID [A] 3 2SK3556-01L,S,SJ Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Avalanche current IAV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET Type(L) Type(S) FUJI POWER MOS FET Type(SJ) FUJI POWER MOS FET OUT VIEW OUT VIEW See Note: 1. 4 See Note: 1. Trademark Fig. 1. Fig. 1. See Note: 1. Trademark Trademark Lot No. Lot No. Type name Lot No. Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION 1 42 3 GATE DRAIN SOURCE Solder Plating Pre-Solder Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. CONNECTION 1 4 2 3 GATE DRAIN SOURCE Solder Plating CONNECTION Pre-Solder Notes 1 2 3 1 GATE 2 DRAIN 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of avalanche ruggedness. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4 |
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