 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BFT 92W PNP Silicon RF Transistor * For broadband amplifiers up to 2GHz at collector currents up to 20mA * Complementary type: BFR 92W (NPN) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFT 92W W1s Q62702-F1681 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 2 25 3 mW 200 150 - 65 ... + 150 - 65 ... + 150 225 C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 105 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFT 92W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 50 - V nA 100 A 10 15 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFT 92W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 3.5 5 0.58 0.3 0.77 - GHz pF 0.9 dB 2 3.2 - IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 11.5 6 14 8.5 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFT 92W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 10.983 1.1172 47.577 1.206 1.5939 1.7785 32.171 1.2 2.0779 0 3 V V fF ps V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 98.533 10.297 7.9562 1.5119 0.79082 0.30227 0 0.3 0 0 0.75167 V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300 fA mA V fF V eV K 0.016123 A 0.019729 A 0.024709 fA 0.013277 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFT 92W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 150 TS 100 TA 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.1 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-11-1996 BFT 92W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.8 pF 6.0 GHz 10V Ccb 1.4 1.2 fT 5.0 4.5 4.0 8V 5V 1.0 3.5 0.8 3.0 0.6 2.5 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 V 20 2.0 1.5 1.0 0 5 10 15 20 1V 0.7V 2V 3V VR mA IC 30 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 16 dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 10.0 dB 10V 10V 5V 3V 2V G 14 13 12 11 10 G 8.0 7.0 6.0 5.0 4.0 5V 3V 2V 9 8 7 6 5 0 5 10 15 20 mA IC 30 0.7V 1V 3.0 2.0 1V 0.7V 1.0 0.0 0 5 10 15 20 mA IC 30 Semiconductor Group 6 Dec-11-1996 BFT 92W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 16 VCE = Parameter, f = 900MHz 35 IC=15mA dB 0.9GHz dBm G 12 0.9GHz IP3 25 3V 2V 20 8V 10 1.8GHz 8 1.8GHz 6 10 4 5 0 0 2 4 6 8 V 12 0 5 10 15 15 1V 2 0 20 V CE mA IC 30 Power Gain Gma, Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) VCE = Parameter 30 IC=15mA dB dB IC=15mA G 25 S21 20 20 15 15 10 10 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 5 10V 5 0 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0 0.0 -5 0.0 Semiconductor Group 7 Dec-11-1996 |
Price & Availability of BFT92W
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |