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| PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176 : tr , tf = 30 ps (Typ.) G7096 : tr = 40 ps (Typ.) Low dark current G4176 : 100 pA (Ta=25 C) Large photosensitive area 200 m G4176 G7096 G4176-01 G7096-01 APPLICATIONS Optical high-speed waveform measurements Optical communications DESCRIPTION HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark current (100pA at Ta=25 C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G417601 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K. ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) G4176 SERIES ABSOLUTE MAXIMUM RATINGS (Ta=25C) Item Maximum Bias Voltage Maximum Light Input Pulsed Light CW to Pulsed Light Operating Temperature Top(a) Storage Temperature Tstg Symbol ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25C, Vb=7V) Unit V Radiant sensitivity S Id = 850 nm = 850 nm Item Symbol Condition Value 10 Vb Condition Min. 0.2 - Value Typ. 0.3 100 Max. 300 Unit A/W pA W/Hz1/2 Pulse width Pulse width 1ns 1ns 50 5 -40 to +85 -40 to +100 mW mW Dark Current NEP* G4176 G4176-01 Terminal Capacitance G4176** C C 0.2 X 10-15 3 X 10-15 0.2 X 10-15 4 X 10-15 - GENERAL CHARACTERISTICS (Ta=25C) Item Spectral Response Range Peak Response Wavelength Effective Sensitive Area Chip Size Package G4176 G4176-01 (Unified with SMA connector) Ct - 0.3 0.5 0.4 0.6 pF Symbol Condition Vb = 7 V Vb = 7 V Value 450 to 870 850 0.2 1 0.2 1 Unit nm nm mm2 mm2 G4176-01 Rise Time G4176 G4176-01 Fall Time G4176 tf 90 to 10 % tr 10 to 90 % p A - 30 50 40 80 ps - 30 50 40 80 ps TO-5 G4176-01 *Noise Equivalent Power **Value on Chip TO-18 Figure 1: Optical Pulse Response G4176 (Including time response of light source, bias-tee and oscilloscope) 1.1 1.0 0.9 G4176-01 (Including time response of light source, assembly circuit and oscilloscope) 1.1 1.0 0.9 (Vb = 7 V) (Vb = 7 V) Output (arb. unit) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Output (arb. unit) 0.8 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Time (0.1ns/div) Time (0.1ns/div) Figure 2: Spectral Response 100 (Vb = 7 V) Radiant Sensitivity (A/W) 10-1 10-2 10-3 300 400 500 600 700 800 900 1000 Wa elength (nm) G7096 SERIES ABSOLUTE MAXIMUM RATINGS (Ta=25C) Item Maximum Bias Voltage Maximum Light Input Pulsed Light CW to Pulsed Light Operating Temperature Top(a) Storage Temperature Tstg Symbol ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25C, Vb=10V) Unit V Radiant sensitivity S Id = 1.3 m = 1.3 m Item Symbol Condition Value 15 Vb Condition Min. 0.2 - Value Typ. 0.4 5 Max. 20 Unit A/W Pulse width Pulse width 1ns 1ns 10 2 -40 to +85 -40 to +100 mW mW Dark Current NEP* G7096 G7096-01 Terminal Capacitance G7096** A W/Hz1/2 C C 0.2 X 10-10 2 X 10-10 0.2 X 10-10 3 X 10-10 - GENERAL CHARACTERISTICS (Ta=25C) Item Spectral Response Range Peak Response Wavelength Effective Sensitive Area Chip Size Package G7096 G7096-01 (Unified with SMA connector) Ct - 0.7 0.9 0.8 1.0 pF Symbol Condition Vb = 10 V Vb = 10 V Value 850 to 1650 1500 0.2 1 0.2 1 Unit nm nm mm2 mm2 G7096-01 Rise Time G7096 G7096-01 Fall Time G7096 tf 90 to 10 % tr 10 to 90 % p A - 40 80 60 100 ps - 120 160 160 200 ps TO-5 G7096-01 *Noise Equivalent Power **Value on Chip TO-18 Figure 3: Optical Pulse Response G7096 (Including time response of light source, bias-tee and oscilloscope) 1.1 1.0 0.9 G7096-01 (Including time response of light source, assembly circuit and oscilloscope) 1.1 1.0 0.9 (Vb = 10 V) (Vb = 10 V) Output (arb. unit) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Output (arb. unit) 0.8 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Time (0.1ns/div) Time (0.1ns/div) Figure 4: Spectral Response 100 (Vb = 10 V) Radiant Sensitivity (A/W) 10-1 10-2 10-3 0.6 0.8 1.0 1.2 1.4 1.6 1.8 W l th ( ) ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G7096 Optical Input BIAS-TEE G4176 (G7096) BIAS CASE G4176-01 G7096-01 Output Electric Output 100 Case Lead Optical Input Electric Output G4176-01 (G7096-01) BIAS Coaxial Connector 10 nF 10 k Power Supply + (or -) - (or +) Power Supply - (or +) + (or -) DIMENSIONAL OUTLINES (Unit : mm) G4176 G7096 G4176-01 G7096-01 CHIP CHIP SENSITIVE SURFACE 10 2.3 3.0 2.0 9.6 1.2 1/4-36UNS-2B 7.9 0.45LEAD CASE BIAS / OUTPUT* OUTPUT/BIAS* OUTPUT / BIAS* CASE (BOTTOM VIEW) (BOTTOM VIEW) *Both polarities of the bias voltage are available. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: laser-g@lsr.hpk.co.jp U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se Cat. No. LPRD1022E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it JAN 2003 IP 12 min. 3.6 8.2 SENSITIVE SURFACE 5.4 4.7 |
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