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| POWEREX MITSUBISHI SEMICONDUCTOR M54585KP PIN CONFIGURATION NC 1 20 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54585KP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. NC IN1 2 19 O1 IN2 3 18 O2 17 O3 IN3 4 IN4 5 16 O4 INPUT IN5 6 IN6 7 15 O5 OUTPUT FEATURES q High breakdown voltage (BVCEO 50V) q High-current driving (IC(max) = 500mA) q With clamping diodes q Driving available with TTL output or with PMOS IC output q With shrink small outline package 14 O6 IN7 8 IN8 9 13 O7 12 O8 11 COM COMMON GND 10 NC : No connection Package type 20P2E-A CIRCUIT DIAGRAM COM APPLICATION Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC interfaces OUTPUT 2.7k INPUT 7.2k 3k GND FUNCTION The M54585KP has eight circuits, which are NPN Darlington transistors. Input transistors have resistance of 2.7k between the base and input pin. A spike-killer clamping diode is provided between each output pin and GND. Output transistor emitters are all connected to the GND pin. Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V. The eight circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board Ratings -0.5 ~ +50 500 -0.5 ~ +30 500 50 0.68 -20 ~ +75 -55 ~ +125 Unit V mA V mA V W C C Jan. 2000 MITSUBISHI SEMICONDUCTOR POWEREX RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = -20 ~ +75C) Symbol VO Parameter Output voltage Collector current (Current per 1 cir- Duty Cycle 10% cuit when 8 circuits are coming on siDuty Cycle 50% multaneously) Ic 400mA "H" input voltage Ic 200mA "L" input voltage Limits min 0 0 0 3.85 3.4 0 typ -- -- -- -- -- -- max 50 200 mA 70 30 30 0.6 V V V Unit V M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE IC VIH VIL ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -20 ~ +75C) Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter Collector-emitter breakdown voltage Test conditions min 50 -- -- -- -- -- -- 1000 Limits typ+ -- 1.3 1.0 0.95 8.7 1.5 -- 2500 max -- 2.4 1.6 1.8 18 2.4 100 -- Unit V V mA V A -- ICEO = 100A VI = 3.85V, IC = 400mA Collector-emitter saturation voltage VI = 3.4V, IC = 200mA II = 3.85V Input current VI = 25V Clamping diode forward voltage IF = 400mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 4V, IC = 350mA, Ta = 25C + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 12 240 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT Vo TIMING DIAGRAM 50% 50% Measured device OPEN RL OUTPUT INPUT PG OUTPUT 50 CL 50% 50% ton toff (1)Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50, VI = 3.85V (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jan. 2000 MITSUBISHI SEMICONDUCTOR POWEREX TYPICAL CHARACTERISTICS M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Thermal Derating Factor Characteristics 1.0 500 Output Saturation Voltage Collector Current Characteristics VI = 3.4V Power dissipation Pd (W) 0.68 0.6 0.408 Collector current Ic (mA) 0.8 400 300 0.4 0.2 200 Ta = 25C 100 Ta = 75C Ta = -20C 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty Cycle-Collector Characteristics 500 500 Output saturation voltage VCE(sat) (V) Duty Cycle-Collector Characteristics Collector current Ic (mA) 1 Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 300 1 2 3 4 5 6 7 8 *Ta = 25C 200 2 3 45 67 8 100 100 0 0 20 40 60 80 100 0 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 0 20 40 60 80 100 Duty cycle (%) DC Amplification Factor Collector Current Characteristics VCE = 4V Duty cycle (%) Grounded Emitter Transfer Characteristics 500 VCE = 4V 104 DC amplification factor hFE 7 5 3 2 Ta = 75C Collector current Ic (mA) 400 300 103 7 5 3 2 Ta = -20C Ta = 25C 200 Ta = 75C Ta = 25C Ta = -20C 100 102 101 2 3 5 7 102 2 3 5 7 103 0 0 1 2 3 4 Collector current Ic (mA) Input voltage VI (V) Jan. 2000 POWEREX MITSUBISHI SEMICONDUCTOR M54585KP 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Input Characteristics 10 500 Clamping Diode Characteristics Forward bias current IF (mA) Ta = -20C 8 400 Input current II (mA) 6 Ta = 25C Ta = 75C 300 4 200 Ta = 25C 2 100 Ta = 75C Ta = -20C 0 0 5 10 15 20 25 0 0 0.5 1.0 1.5 2.0 Input voltage VI (V) Forward bias voltage VF (V) Jan. 2000 |
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